Sumitomo Electric Industries, Limited

Sumitomo Wiring Systems, Limited

Autonetworks Technologies, Limited

Shigeru Sawada

Takashi Iwasaki

Yoshifumi Saka

Hajime Watanabe

Kenji Ohki

Hiroya Kimura

Hideo Hoshi

An electric contact material for a connector includes a base material made of a metal material; an alloy layer that is formed on the base material and made of an alloy containing at least three elements including Sn and Cu as well as at least one metal selected from Zn, Co, Ni, and Pd; and a conductive coating layer formed on the surface of the alloy layer. The alloy layer contains an intermetallic compound obtained by replacing some of the Cu atoms in CuSnwith at least one metal selected from Zn, Co, Ni, and Pd. It is preferable that the content of at least one metal selected from Zn, Co, Ni, and Pd in the alloy layer is in a range of 1 to 50 atom % when the total content of the metal and Cu is regarded as 100 atom %.

Electric contact material for connector and method for producing same

A terminal fitting having a smaller terminal insertion force than before. The terminal fitting includes a backing material made of a metal material and a plating coating covering a surface of the backing material. The plating coating contains a Sn parent phase and Sn&#x2014;Pd based particles dispersed in the Sn parent phase and includes an outermost layer having an outer surface in which the Sn parent phase and the Sn&#x2014;Pd based particles are present. Further, the number of the Sn&#x2014;Pd based particles present in the outer surface of the plating coating in a state where only the Sn parent phase is removed is 10 to 400 Sn&#x2014;Pd based particles per 500 &#x3bc;m.

Terminal fitting and connector

A connecting terminal developed speedily while limiting a temperature rise when a current flows, comprising male and female terminals each having a wire crimp portion to which a wire is crimped, and a joint portion where the male and female terminals are joined to each other, wherein a contact resistance value of the whole connecting terminal is a sum of contact resistance values in the wire crimp portions and the joint portion, and a length of a contact portion is a sum of lengths of the wire crimp portions and the joint portion, wherein a normalized contact resistance value Ris derived by dividing the contact resistance value by the length, and a relationship of a wire resistance value Rof the wire, a current value I and a permissive increase in temperature &#x394;T to the normalized contact resistance value Ris expressed by R&#x3c;&#x394;T/(752&#xd7;I)&#x2212;3.7&#xd7;R.

Connecting terminal

A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsPgraded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsPbuffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.

Compound semiconductor wafer and manufacturing method thereof

Method for non-invasively profiling carrier concentration in In-containing compound semiconductor wafers that enables employing the profiled wafers themselves in semiconductor device applications. The method, which using the C/V technique profiles carrier concentration in wafers including an In-containing-compound semiconductor surface layer, is characterized in non-invasively profiling carrier concentration by contacting a liquid electrode on the wafer surface, and without using photo-etching, employing an applied voltage that is up to a voltage surpassing 10V.

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Yokkaichi, Japan

Shigeru Sawada