Hitachi Chemical Company, Ltd.

Shigeru Nobe

Yousuke Hoshi

Kazuhiro Enomoto

Daisuke Ryuzaki

Masato Fukasawa

Naoyuki Koyama

Hiroshi Matsutani

Koichi Abe

Takashi Shinoda

Takafumi Sakurada

Haruaki Sakurai

Akitoshi Tanimoto

Shingo Tahara

Yu Aoki

Kei Kasuya

Munehiro Oota

Takaaki Tanaka

Eiichi Satou

Takumi Ueno

Shigeki Katogi

Masayuki Hanano

Jin Amanokura

Tadahiro Kimura

Sou Anzai

Kanshi Chinone

Shigeru Yoshikawa

Masanobu Habiro

Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.

Polishing agent and method for polishing substrate using the polishing agent

Disclosed is a photosensitive resin composition comprising (A) an alkali-soluble resin having a structural unit represented by the following formula (1), (B) a compound that generates an acid by light, (C) a thermal crosslinking agent, and (D) an acryl resin having a structural unit represented by the following formula (2): wherein Rrepresents a hydrogen atom or a methyl group; Rrepresents an alkyl group having 1 to 10 carbon atoms, or the like; and a represents an integer of 0 to 3, b represents an integer of 1 to 3, and the total of a and b is 5 or less, and wherein Rrepresents a hydrogen atom or a methyl group; and Rrepresents a hydroxyalkyl group having 2 to 20 carbon atoms.

Photosensitive resin composition, method for producing patterned cured film, semiconductor element and electronic device

There is provided a photosensitive resin composition containing (A) an alkali-soluble resin, (B) a compound which generates an acid when exposed to light, (C) a thermal crosslinking agent, and (D) a nitrogen-containing aromatic compound represented by the following formula (1): wherein Rrepresents a hydrogen atom or a hydrocarbon group; Rrepresents a hydrogen atom, an amino group or a phenyl group; and A and B each independently represent a nitrogen atom, or a carbon atom and a hydrogen atom bonded thereto.

Photosensitive resin composition, method for manufacturing patterned cured film, and electronic component

The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Polishing solution for CMP and polishing method using the polishing solution

Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.

Polishing slurry for metal films and polishing method

The positive-type photosensitive resin composition according to the present invention comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound that produces an acid by light, a thermal crosslinking agent, and a silane compound having at least one functional group selected from an epoxy group and a sulfide group.

Positive photosensitive resin composition, method of creating resist pattern, and electronic component

The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.

Metal polishing slurry and polishing method

The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

The composition for forming silica based coating of the invention comprises siloxane resin such as an alkoxysilane as component (a), a solvent such as an alcohol capable of dissolving the siloxane resin as component (b), an ammonium salt, etc. as component (c) and a thermal decomposing/volatile compound as component (d), wherein the stress of the coating obtained by heat treatment at 150&#xb0; C./3 min is 10 MPa and the specific permittivity of the silica based coating obtained by final curing is less than 3.0. The composition for forming silica based coating according to the invention can form a silica based coating having low permittivity, excellent adhesion and sufficient mechanical strength.

Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts

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Hitachi, Japan

Shigeru Nobe