Canon Kabushiki Kaisha

Shigeru Nishimura

Hiroshi Yuzurihara

Hiroaki Naruse

Shunsuke Takimoto

Masakazu Morishita

Masaru Sakamoto

Hidekazu Takahashi

Tetsuya Itano

Takanori Watanabe

Masatsugu Itahashi

Ryuichi Mishima

Seiichi Tamura

Yasushi Nakata

Kotaro Abukawa

Mineo Shimotsusa

Kenji Makino

Yasuhiro Sekine

Hideshi Kuwabara

Yuzo Kataoka

Takeshi Aoki

Tetsuo Asaba

Takashi Okagawa

Yasushi Kawasumi

Yuya Fujino

Hiraku Kozuka

Koji Sawada

Aiko Furuichi

A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Photoelectric conversion device, method for producing photoelectric conversion device, and image pickup system

A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.

Photoelectric conversion device and image sensing

A photoelectric conversion device includes photoelectric conversion elements and element isolation regions, both of which are arranged on a semiconductor substrate. The photoelectric conversion device further includes a plurality of interlayer insulation layers including a first interlayer insulation layer arranged nearest to the semiconductor substrate, and a second interlayer insulation layer arranged to cover the first interlayer insulation layer. Gaps extending from at least the second interlayer insulation layer to the first interlayer insulation layer are arranged in first and second interlayer insulation layer regions corresponding to the element isolation regions.

Photoelectric conversion device and imaging system using photoelectric conversion device

A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle &#x3b8; with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5&#xb0;&#x2266;&#x3b8;&#x2266;4.5&#xb0;, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle &#x3b8; to a direction perpendicular to the principal plane within a range of 0&#xb0;&#x3c;&#x3c6;&#x2266;45&#xb0;, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle &#x3b1; with the two plane direction within a range of 0&#xb0;&#x3c;&#x3b1;&#x3c;90&#xb0;.

Photoelectric conversion device, its manufacturing method, and image pickup device

Photoelectric conversion device with a pixel region and a peripheral circuit region sharing a same substrate

A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.

Manufacturing method of photoelectric conversion device

A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.

Photoelectric-conversion apparatus and image-pickup system

It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle &#x3b8; with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5&#xb0;&#x2266;&#x3b8;&#x2266;4.5&#xb0;, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle &#x3c6; to a direction perpendicular to the principal plane within a range of 0&#xb0;&#x3c;&#x3c6;&#x2266;45&#xb0;, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle &#x3b1; with the two plane direction within a range of 0&#xb0;&#x3c;&#x3b1;&#x3c;90&#xb0;.

A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm(old ASTM).

Semiconductor substrate for solid-state image pickup device and producing method therefor

The invention is to simplify a producing process for a solid-state image pickup device having pixels including MOS transistors, thereby improving productivity of the image pickup device. In a producing method for a solid-state image pickup device including pixelseach including a photoelectric conversion regionfor generating photoelectrically a carrier and accumulating the carrier photoelectrically generated, a carrier accumulating portionfor accumulating a carrier overflowing from the photoelectric conversion regionin a period of carrier generation and accumulation thereof, and a MOS transistor Tx-MOS for transferring the carrier overflowing from the photoelectric conversion region, wherein a gate electrode of the MOS transistor Tx-MOS is formed in the same step as the step of forming a polysilicon filmconstituting the first electroconductive film of the carrier accumulating portion

Producing method for solid-state image pickup device including formation of a carrier accumulating region

To make the thickness of an interlevel insulating film uniform and suppress variations in output signal, in a photoelectric conversion element including a plurality of photoelectric conversion portions, and light-shielding units having openings formed above the photoelectric conversion portions, the light-shielding units have first light-shielding layers, and second light-shielding layers formed on the first light-shielding layers via an interlevel insulating film. The first light-shielding layers have gaps (GP) for allowing two adjacent openings (OP) to communicate with each other. The second light-shielding layers have light-shielding portions (,) above the gaps of the first light-shielding layers.

Photoelectric conversion device and image sensor

An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried out and a region where thermal CVD is carried out, a device provided in the chamber for pressing a substrate onto a holder, a lamp for illuminating light having a component of a wavelength of 1 .mu.m or above to heat the substrate, an introducing port for separately introducing two active substances to a vicinity of the substrate, a vaporizing device in which at least two bubblers are series-connected to vaporize the active substances, and an exhaust system which is divided into two systems each of which has a heater and which has a port for introducing an inactivating substance into an exhaust pump.

Growing community of inventors

Ebina, Japan

Shigeru Nishimura