Sumitomo Electric Industries, Limited

Nissan Motor Company Limited

Shigeru Nakajima

Taketoshi Kawabe

Ikuhiro Taniguchi

Yoshihiro Kobayashi

Daisuke Watanabe

Kazuto Waki

Hiroshi Kumaki

Nobuo Shiga

Hideki Hayashi

Kazuhiko Takashima

Nobuhiro Kuwata

Toshiki Ebata

Kenji Otobe

Ken-ichiro Matsuzaki

Ryoji Sakamoto

Ken-ichi Yoshida

Seigo Komatsu

Sachio Takizawa

Takashi Sugino

Takeshi Chihara

Takuji Akiyama

Mitsuo Touse

Kousuke Inoue

A jig () is placed on a cylinder block () set in an inverted position, and a crankshaft () is lifted upward from a main bearing part () and held at a predetermined height position. A lower link () temporarily fitted to a crank pin () in the previous step is rotated about the crank pin () as a center by a robot hand, and held in a predetermined inclined position in which a dividing surface () becomes vertical. In this state, a pair of bolts () is horizontally fastened from the right and the left by using a nut runner ().

Bolt fastening method for lower link

A lubrication structure of the present invention is applied to a multi-link piston crank mechanism that has a upper link (), a lower link () and a control link (). Lubricating oil is supplied in an oil storing portion () formed between a pair of upper-pin pin boss portions () by a plate member () through an oil supply hole (). By oscillating rotary motion of the upper link side pin boss portion () that is provided with an oil groove () on an end surface of the upper link side pin boss portion (), the lubricating oil in the oil storing portion () is supplied to an upper pin ().

Lubrication structure and lubrication method for upper pin in piston crank mechanism of internal combustion engine

A manufacturing method for a resin product comprised of a plurality of separate pieces and having a flange, the plurality of separate pieces including one as a separate piece having a flange corresponding to the flange of the resin product, comprises primary-injection-molding the plurality of separate pieces including the separate piece having the flange by a primary injection of a resin, and having respective separate planes of the plurality of separate pieces in abutment, joining the separate pieces together to mold the resin product having the flange by a secondary injection of a welding resin. When molding the plurality of separate pieces including the separate piece having the flange by the primary injection of the resin, a gate part for molding the flange of the separate piece having the flange is positioned inside the flange.

Manufacturing method for flanged resin product

A field-effect transistor has a composite channel structure having a first channel layer containing GaInP semiconductor and a second channel layer containing GaAs semiconductor. When the electric field is low in the channel, a channel current is primarily conducted in the second channel layer. When the electric field is high, the electrons flowing in the second channel layer move through real space transition to the first channel layer. These electrons conduct in the channel primarily in the first channel layer. Since GaInP semiconductor has a wider forbidden bandwidth than that of GaAs semiconductor, the avalanche breakdown voltage of GaInP semiconductor is higher than that of GaAs semiconductor. When the electric field is high, the conduction electrons travel in this GaInP semiconductor layer. This also improves the avalanche breakdown voltage of the field-effect transistor.

Field-effect transistor

A valve control system for controlling an electromagnetic valve unit is arranged to execute an initialization control for moving a movable member to a start position by alternatively energizing valve opening and closing electromagnets according to a natural frequency of a vibration system of the electromagnetic valve unit. The valve control system detects amplitudes of oscillation of the movable member during the initialization control and calculates an increase-degree of the detected amplitudes. Further, the valve control system estimates a friction quantity of the vibration system on the basis of the calculated increase-degree and controls electric current supplied to the electromagnets on the basis of a control parameter reflecting the estimated friction quantity.

Valve control system for electromagnetic valve

In an electromagnetically operable engine valve assembly including a controller for an internal combustion engine, a stable initialization is achieved which suppresses a collision of a movable element against an electromagnet to cope with a viscosity of a lubricating oil during an engine start under an engine low temperature. A supplied current value is feedback controlled in accordance with a position of movable element when an initialization control such that a current is continuously supplied to one of electromagnets is executed. At this time, the feedback control gain G is, first, set to a relatively small value and is, thereafter, switched to a relatively large value at a gradual pace for each execution of the initialization control until the initialization control has succeeded in moving the movable element to an initial position.

Apparatus and method for controlling electromagnetically operable engine valve assembly

In manufacturing compound semiconductor device, a plasma treatment is carried out by exposing surface of compound semiconductor material including AlAs or InAs exposing in atmosphere at manufacturing process in plasma of gas including any of P, N, H, and Ar at substrate temperature of less than 200&deg; C. Desirably a second plasma treatment is carried out by exposing said compound semiconductor material in plasma of gas including p at higher substrate temperature continuously after said plasma treatment without taking the substrate out in air.

Method for manufacturing compound semiconductor device

A valve control system for controlling an electromagnetic valve unit is arranged to detect a characteristic of a free vibration of a vibration system in the electromagnetic valve unit when a pair of electromagnets of the electromagnetic valve unit are de-energized and to estimate at least one of a friction quantity and a spring constant of the vibration system on the basis of the detected characteristic of the free vibration. The control system executes the control of the electromagnetic valve unit on the basis of a control parameter determined by one of the estimated friction quantity and the estimated spring constant. This arrangement improves a certainty of softly landing a movable member of the electromagnetic valve unit on the electromagnets.

Control system of electromagnetically operated valve

It is an object of the present invention to provide a structure of a field effect transistor, which effectively suppresses a leakage current from a source/drain region to a substrate side without increasing a parasitic capacitance, and a method of manufacturing the same. According to the present invention, when an LDD structure is to be constituted by forming, in a semiconductor substrate, an active layer of a first conductivity type, a heavily doped layer of the first conductivity type, which is separated from the active layer by a predetermined distance and has a high impurity concentration; and an intermediate concentration layer of the first conductivity type, which is formed between the active layer and the heavily doped layer and has an impurity concentration lower than that of the heavily doped layer, regions of a second conductivity (these regions are converted into depletion layers upon contact with the corresponding regions of the first conductivity), which cover the entire bottom portion of the corresponding region are formed.

Field effect transistor with lightly doped drain regions

The invention provides a FET by forming a channel layer in a layer including 'n' type impurity at high concentration, which is sandwiched by a first semiconductor layer and a second semiconductor layer lightly doped with impurity. Therefore even when electrons in the channel layer obtain high energy, the electrons in this arrangement rush out essentially to the second semiconductor layer excelling in its electron carrying characteristic, thus a travelling speed of the electrons in the channel layer is not lowered. Furthermore, because the channel layer is allowed to include impurity at high concentration, the current drive capability can be improved.

Field effect transistor

This invention provides a high-speed FET with a sufficiently high output current, and an FET having a high mobility of channel electrons and a high electron saturation rate. For this purpose, in this invention, a buffer layer, a first channel layer, a first spacer layer, a second channel layer, a second spacer layer, a third channel layer, and a capping layer are sequentially epitaxially grown on a semi-insulating GaAs semiconductor substrate. Drain and source regions are formed, and a gate electrode is formed to Schottky-contact the capping layer. Drain and source electrodes are formed to ohmic-contact the drain and source regions. Extension of a surface depletion layer from the substrate surface to a deep portion is prevented by the third channel layer closest to the substrate surface. For this reason, a sufficient quantity of electrons for forming a current channel are assured by the second and first channel layers.

Field effect transistor and method of manufacturing the same

There is disclosed a field effect transistor having a channel layer, an electron supply layer, and a spacer layer formed between the channel layer and the electron supply layer. The spacer layer has a thickness for spatially separating a two-dimensional electron gas from donor ions in the electron supply layer, and for forming the two-dimensional electron gas in the channel layer by the Coulomb force of the donor ions. The spacer layer material has better high frequency characteristics than that of the electron supply layer.

Field effect transistor having a spacer layer with different material

In this MESFET, an undoped AlInAs layer 120, an undoped InP layer 130, an n-InGaAs layer 140, an undoped InP layer 150, and an AlInAs layer 160 are formed on a semi-insulating InP substrate 110. A source electrode 410, a drain electrode 430, and a gate electrode 420 are formed on the AlInAs layer 160. The source electrode 410 and the drain electrode 430 are in ohmic contact with the AlInAs layer 160, and the gate electrode 420 forms a Schottky junction with the AlInAs layer 160.

Semiconductor device

The invention provides a FET by forming a channel layer in layer including 'n' type impurity at high concentration, which is sandwiched by a first semiconductor layer and a second semiconductor layer lightly doped with impurity. Therefore even when electrons in the channel layer obtain high energy, the electrons in this arrangement rush out essentially to the second semiconductor layer excelling in electron carrying characteristic, thus a travelling speed of the electrons in the channel layer is not lowered. Furthermore the channel layer being formed in layer and allowed to include impurity at high concentration, the current drive capability can be improved.

A buffer layer, a first undoped layer, a first active layer and second undoped layer, a second active layer, a third undoped layer, a cap layer and contact layers are epitaxially grown on a semiconductor substrate in the stated order. A gate electrode is formed in a recess etched groove which formed in the center and reaches the cap layer through the contact layers. A drain electrode and a source electrode are formed on the contact layers and on both sides of the gate electrode.

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Yokohama, Japan

Shigeru Nakajima