Shin-etsu Chemical Co., Ltd.

Shigeru Mori

Motoo Fukushima

Eiichi Tabei

Satoshi Kuwata

Akira Hayashida

Yoshitaka Hamada

Mikio Aramata

Takayuki Takahashi

Kunio Itoh

Koji Sakuta

Kenji Yamamoto

Kazuharu Sato

Yoshiaki Kudo

Motohiko Hirai

Yoshinori Hida

Seizi Katayama

Hisashi Umehara

Mitsuhiro Takarada

Yasuo Tarumi

Kazumi Noda

Masaki Kasashima

Yoshio Okamura

Kimitaka Kumagae

Toshikazu Sugita

Hideyuki Itoh

Naoyuki Ida

Kouichirou Kobayashi

Kunio Ito

Mitsuhiko Takarada

Masaki Kasahima

Kouji Sakuta

Masanobu Kimura

A conductive powder having an organic silicon polymer layer on the surface of each particle and a metal layer enclosing the silicon polymer layer possesses a stronger bond between the particle base and the metal even at elevated temperature and exhibits a high and stable conductivity and heat resistance.

Conductive powder and making process

A metal pattern is prepared by applying a polysilane composition comprising a polysilane, a carbon functional silane, and a solvent onto a substrate to form a patterned coating of the polysilane composition, attaching catalytic metal nuclei to the patterned coating, and immersing the substrate in an electroless plating bath for thereby chemically depositing a metal film on the patterned coating.

Polysilane composition for forming a coating suitable for bearing a metal pattern, metal pattern forming method, wiring board preparing method

A crosslinkable silicon polymer composition is provided comprising (A) a silicon polymer containing Si--Si bonds and Si--H groups and having a Mn of 500-500,000, (B) a polyfunctional aromatic carboxylic acid allyl ester, and (C) an organic peroxide or azo compound. The composition cures into a crosslinked polysilane film which is solvent insoluble, tough, and abrasion resistant.

Crosslinkable silicon polymer compositions

An organic silicon polymer is purified by washing at least once a solution of an organic silicon polymer with aqueous hydrochloric acid having a concentration of at least 0.001 N, and washing the solution at least twice with ultrapure water having a resistivity of at least 10 M.OMEGA./cm. Metal impurities can be removed from the organic silicon polymer to a sufficient level for use as electronic material without detracting from the polymer's own properties.

Purification of organic silicon polymer

A polysilane pattern-bearing substrate is prepared by the steps of (1) forming a polysilane film on a substrate, (2) subjecting the polysilane film to selective light exposure in the presence of a first solvent which does not dissolve polysilane, but dissolves siloxane, for converting the polysilane in selected areas to siloxane for thereby forming a pattern, (3) removing only the siloxane from the substrate of step (2) using a second solvent which does not dissolve polysilane, but dissolves siloxane, and (4) completely removing the second solvent. The polysilane pattern has a high degree of definition.

Method for preparing polysilane pattern-bearing substrate

A conductive circuit board is prepared by forming a film of organopolysilane having a H-Si bond on a substrate, selectively exposing the organopolysilane film to light to form a photo-crosslinked layer in exposed areas, dissolving away unexposed areas, and contacting a silver salt with the photo-crosslinked layer and reducing the silver salt to form a silver conductive layer thereon. A conductive circuit board comprising a circuit-patterned film of photo-crosslinked polymer on a substrate and a silver conductive layer on the film has high and stable electric property.

Conductive circuit board and method for making

A polysilane containing insoluble matter and microgel as impurities is purified by dissolving the polysilane in a good solvent to form a polysilane solution, adding a poor solvent to the polysilane solution for causing a minor amount of high molecular weight component to precipitate, thereby agglomerating the insoluble matter and microgel, and removing the resulting agglomerate by filtration. The purifying method of the invention can readily remove the insolubles from the starting polysilane within a short time. A pure polysilane which can form a transparent smooth film is obtainable with commercial advantages.

Purification of polysilane

A highly conductive polymer is obtained by electrochemically oxidizing a polysilane.

Highly conductive polymer composition and method for making

A polysilane composition including a polysilane and a plasticizer can be coated as a thin film having improved mechanical strength and a high photo decomposition rate. A polysilane composition including a polysilane and an ester can be coated as a thin film which is exposed to UV and readily dyed to form a dyed polysilane film.

Polysilane compositions

A polysilane is blended with a porphyrin or a metal complex thereof. The polysilane composition may further contain a plasticizer. The porphyrin is effective for suppressing photolysis of polysilane.

A conductive polymer comprises a silicon-containing polymer having, in the main chain thereof, Si--Si bonds or both Si--Si bonds and C--C multiple bonds, and ferric chloride doped in said polymer through vapor phase doping. A method for preparing such a conductive polymer is also described.

Conductive polymers and process for preparing the same

A silicon containing polymer such as a polysilane, poly(disilanylenephenylene), and poly(disilanyleneethynylene) is admixed with an amine compound and then doped with an oxidizing dopant, typically iodine and ferric chloride, to produce a highly conductive polymer composition having improved shapability. The composition is easily applicable, as by spin coating, to form a highly conductive film or coating.

Conductive polymer composition

A polysilane having an aromatic amino group is doped with an oxidative dopant, typically iodine and ferric chloride, to produce a highly conductive polysilane composition having improved shapability. The composition is easily applicable to form a highly conductive film or coating.

Conductive polymer compositions

Polycyclic aromatic group-pendant polysilanes of the following general formula are described.

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Kawasaki, Japan

Shigeru Mori