Mitsubishi Denki Kabushiki Kaisha

Shimadzu Corporation

Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaihsa

Shigeru Matsuno

Fusaoki Uchikawa

Takehiko Sato

Akira Yamada

Tsuyoshi Horikawa

Takaaki Kawahara

Masayoshi Tarutani

Mikio Yamamuka

Hisao Watarai

Sadayuki Matsumoto

Masakazu Takabayashi

Takuya Ohira

Junichiro Hoshizaki

Shinichi Kinouchi

Kiichi Yoshiara

Shoji Miyashita

Tatsushi Kawamoto

Naoki Yoshioka

Mitsushi Kawao

Hajime Takeya

Kunihiko Nishimura

Takeyuki Maegawa

Ryosuke Namiki

Takeshi Sakata

Takashi Hashimoto

Minoru Hashimoto

Akira Maeda

Takaaki Iwata

Takeharu Kuroiwa

Tatsushi Sato

Yoshihito Imai

Yoshio Kubo

Masato Koyama

Yoichiro Nishimoto

Takanori Sone

Tomoko Sendai

Toshihisa Honda

Yasumichi Hatanaka

Susumu Arai

Kiyoshi Yoshizaki

Teiji Takahashi

Takuo Ozawa

Shin-ichi Kinouchi

Mitsunobu Wakata

Fumio Fujiwara

Daisuke Niinobe

Takahiro Nagamine

Syouji Miyashita

Takashi Higaki

A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film.

Method for roughening substrate surface and method for manufacturing photovoltaic device

Provided are a wire electric discharge machining method for poorly conductive materials, such as solar cell silicon, and a semiconductor wafer manufacturing method and a solar battery cell manufacturing method based on the wire electric discharge machining method. Electrical discharge machining of a high volume resistivity, hard and brittle materials, having a volume resistivity that is equal to or higher than 0.5 &#x3a9;&#xb7;cm and equal to or lower than 5 &#x3a9;&#xb7;cm is performed by applying a pulse voltage having a pulse width that is equal to or higher than 1 &#x3bc;sec and equal to or lower than 4 &#x3bc;sec and having a peak current at the time of machining a wire electrode that is equal to or higher than 10A and equal to or lower than 50A to a wire electrode and generating a discharge pulse between the wire electrode and a subject to be machined.

Wire electric discharge machining method, semiconductor wafer manufacturing method, and solar battery cell manufacturing method

Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 &#x3bc;m or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film.

Method for manufacturing photovoltaic device

In a liquid substance supply device, a three port two valve directional control valve is provided in a transfer line, and a substance container and the transfer line are connected together by a four port three valve directional control valve in such a way that the four port three valve directional control valve and the substance container can be removed from the transfer line as a unit. Furthermore, in a vaporizer, an orifice member is provided to surround the end portion of an internal conduit in which flows a mixture substance consisting of a gas and a liquid substance mixed therewith, and gas for atomization is spouted into a vaporization chamber through a gap defined between the internal conduit and the orifice member. Yet further, the temperature of a vaporization surface in the vaporization chamber can be controlled independently in correspondence with the nature of the liquid substance.

Liquid substance supply device for vaporizing system, vaporizer, vaporization performance appraisal method

Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method

A metal electrode is formed on a substrate. The metal electrode includes a first layer, a second layer, and a third layer lying, from an outermost surface of the metal electrode toward the substrate, in this order. The first layer contains tin as a principal constituent and the second layer contains a metallic element which produces an eutectic reaction with tin, wherein the melting point of the first layer is higher than the melting point of the second layer. The third layer is an underlying metallic layer for the first and second layers.

Metal electrode and bonding method using the metal electrode

A polarization dispersion compensation apparatus includes a polarization controller, a polarization beam splitter, an optical delay circuit, and a polarization beam combiner. The polarization controller controls polarization of an optical signal so that the polarization axis of the input optical signal substantially coincides with the optical axis of an optical transmission line, and the polarization beam splitter section splits the optical signal into two polarized components perpendicular to each other. The optical delay circuit section causes a difference in delay between the two polarized components, and the polarization beam combiner section combines the two polarized components output from the optical delay circuit section. Each of the polarization beam splitter section and the polarization beam combiner section includes a symmetric Mach-Zehnder interferometer having optical transmission lines in two arms, each arm including a temperature control and a birefringence portion for compensating polarization dispersion between the two polarized components.

Polarization dispersion compensating apparatus

A variable dispersion compensator includes an optical waveguide, a temperature controller. The optical waveguide has a chirped grating having a Bragg wavelength changing along the longitudinal direction of the grating. A temperature distribution T (x) is applied to a central portion of the grating, defined as a region where a distance x from an end of the grating is a range of 20 % to 80 % of total length of the grating. Temperature distribution T (x) and T (x) are applied to end portions of the grating, defined as two regions extending from respective ends of the grating to the central region, respectively. At least one of T (x) and T (x) has a distance dependence different from that of the T (x).

Variable dispersion compensator

In a polarization mode dispersion compensating apparatus for controlling polarization mode dispersion of an optical signal, a first optical monitor detects and outputs, based on an optical signal outputted from a first optical transmission line having a grating, a first detection signal indicating magnitude of waveform distortion of the first optical transmission line, and a second optical monitor detects and outputs, based on an optical signal output from a second optical transmission line having a grating, a second detection signal indicating magnitude of waveform distortion of the second optical transmission line. A calculator circuit calculates from the first and second detection signals an output signal. A controller controls a polarization controller based on the output signal from the calculator circuit.

PMD compensating apparatus for controlling polarization controller based on detection of magnitude of waveform distortion

A method of manufacturing a grating in an optical waveguide that includes a core and a cladding covering the core. The method includes scanning a laser beam along an optical axis of the optical waveguide to modulate the refractive index of the core. The core is made of a material having a refractive index that is changeable upon irradiation by radiation. In addition, in scanning the core, the irradiation range of the laser beam is controlled and the core is scanned several times. Therefore, a predetermined distribution of irradiation is obtained in a direction of the optical axis of the grating.

Method of manufacturing grating

A temperature control device for controlling temperature variable devices disposed near a grating of a variable dispersion equalizer including an optical waveguide having the grating. The temperature variable devices control temperatures independently of each other. The temperature control device includes a controller for controlling the temperature variable units, and a storage device which stores temperature control patterns including combinations of control signals for the respective temperature variable units. The controller controls the temperature variable devices with a control signal of at least one of the temperature control patterns selected from the storage device.

Temperature control system for a grating

In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device

A CVD source material which can be stably tramsported to a reactor in order to form a platinum metal, Cu, or an oxide of them as an electrode. An organometallic compound including a platinum metal (Ru, Pt, Ir, Pd, Os, Rh, Re) or Cu, is dissolved into tetrahydrofuran or a solvent containing tetrahydrofuran to obtain the CVD source material. In this material, the amount of moisture is preferably not more than 200 ppm. A film is formed by CVD employing this source material, the material is supplied stably, and the properties of the electrode film are improved. The capacitance property of the film is improved. Wiring of an electrical device may be formed by employing source material.

CVD source material for forming an electrode, and electrode and wiring film for capacitor formed therefrom

Growing community of inventors

Tokyo, Japan

Shigeru Matsuno