Kabushiki Kaisha Toshiba

Shigeru Hasebe

Shoji Mimotogi

Koji Hashimoto

Soichi Inoue

Satoshi Tanaka

Takashi Sato

Shigeki Nojima

Osamu Ikenaga

Toshiya Kotani

Yukiyasu Arisawa

Masahiro Miyairi

Tetsuaki Matsunawa

Mineo Goto

According to a mask verifying method of the embodiment, a difference between an actual dimension of a mask pattern and a simulation dimension is calculated as a computational estimated value. Moreover, a difference between an actual dimension of the mask pattern that is actually measured and a dimension on pattern data is calculated as an actually-measured difference. Then, it is verified whether a mask pattern dimension passes or fails based on the calculated value. When calculating the computational estimated value, a model function, which is set based on each correspondence relationship between an actual dimension and a mask simulation dimension of a test pattern, which includes a plurality of types of pattern ambient environments, to the mask pattern.

Dimension assurance of mask using plurality of types of pattern ambient environment

An exposure method is disclosed, which comprises preparing a first mask in which a size of a mask pattern is measured in advance, calculating a first exposure quantity to be applied to the first mask to provide a first resist pattern by using the first mask, simulating optical intensity distributions on a wafer in a case where the first mask is used and an optical intensity distribution on the wafer in a case where a second mask is used, a size of a mask pattern of the second mask being measured in advance, calculating a difference in optical intensity between the first mask and the second mask from the simulated optical intensity distributions, and calculating a second exposure quantity to be applied to the second mask to provide a second resist pattern, from the first exposure quantity and the difference in optical intensity.

Exposure method, exposure quantity calculating system using the exposure method and semiconductor device manufacturing method using the exposure method

A method of creating a predictive model of a process proximity effect comprises: preparing a predictive model of a process proximity effect including a non-determined parameter; and determining the non-determined parameter, the method comprises: preparing a pattern group for modeling, the pattern group comprising a plurality of repetition patterns, the plurality of repetition patterns being obtained by changing a first and second dimensions of a repetition pattern which repeats a basic pattern, the first dimension defining the basic pattern, and the second dimension defining repetition of the basic pattern; selecting a predetermined repetition pattern from the pattern group for modeling, the basic pattern of the predetermined repetition pattern corresponding to a pattern which is to be formed on a wafer and has a predetermined dimension; and determining the non-determined parameter in the predictive model based on the predetermined repetition pattern and the pattern having the predetermined dimension.

Method of creating predictive model, method of managing process steps, method of manufacturing semiconductor device, method of manufacturing photo mask, and computer program product

A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judgment unit to judge whether the entire exposure characteristic deterioration quantity is acceptable value.

Projection exposure mask acceptance decision system, projection exposure mask acceptance decision method, method for manufacturing semiconductor device, and computer program project

Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.

Method of manufacturing a photo mask and method of manufacturing a semiconductor device

Resist film patterns are formed on a light shielding film formed on a surface of the glass substrate. The resist film patterns cover regions A and B of the surface of the substrate. Then, using the resist film patterns as a mask, the light shielding film is patterned to form the light shielding film pattern in the regions A and B. The light shielding film pattern formed in region B is used as a dummy pattern. Then, a further resist film is formed over the light shielding film patterns of the regions A and B. The resist film is patterned to provide only a resist film pattern covering the region A. Thereafter, an etching processing is applied for removing the light shielding film pattern in the region B using the resist film pattern as a mask. In this method, the presence of the dummy pattern is an important feature.

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Yokohama, Japan

Shigeru Hasebe