Mitsubishi Electric Corporation

Shigeru Fujiwara

Kazuya Yamamoto

Daisuke Kobayashi

Atsushi Okamura

Miyo Miyashita

Katsuya Kato

Naoki Kosaka

Kenichiro Chomei

Eri Fukuda

Shigeo Yamabe

A power amplifier includes: a plurality of FET cells connected in parallel to each other; a plurality of first resistors connected between gate terminals of the plurality of FET cells and grounding terminals respectively; a plurality of second resistors having one ends connected to the gate terminals of the plurality of FET cells respectively and other ends connected to each other; a plurality of capacitors connected in parallel to the plurality of second resistors respectively; and a third resistor connected between a connection point of the other ends of the plurality of second resistors and a power supply terminal, wherein the first resistors have temperature coefficients of resistance greater than those of the second and third resistors and are arranged closer to the corresponding FET cells than the third resistor.

Power amplifier including a plurality of FET cells connected in parallel

A power amplifier includes: first and second bias terminals to which bias voltages are respectively supplied; a first transistor having a first control terminal connected to the first bias terminal, a first terminal that is grounded, and a second terminal; a second transistor having a second control terminal connected to the second bias terminal, a third terminal connected to the second terminal, and a fourth terminal; a capacitor connected between the second control terminal and a grounding point; and a variable resistor connected in series with the capacitor, between the second control terminal and the grounding point.

Power amplifier

Growing community of inventors

Tokyo, Japan

Shigeru Fujiwara