Hitachi, Ltd.

Shigeru Aoki

Toshiaki Tanaka

Shigeo Kato

Yukio Takano

Masahiko Ogirima

Michiyoshi Maki

An insulating member ( ) of an amorphous structure partially opened to expose a substrate ( ) is formed on the substrate. At least a compound semiconductor ( ) containing at least nitrogen as a constituent element is deposited on the insulating member ( ) and the substrate ( ) exposed by the opening thereby to form a semiconductor material ( ). A semiconductor material ( ) configured of the first semiconductor material or configured of the first semiconductor material and another semiconductor material grown on the first semiconductor material is processed thereby to form a semiconductor device.

Semiconductor devices

Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices

This invention relates to a semiconductor substrate and a method of manufacturing the same. In a semiconductor manufacturing process for a Si single crystal wafer or the like, before the step of mirror polishing, the rear surface of a Si wafer is ground to form a damaged layer having a certain fixed thickness, the Si wafer is subsequently etched by chemical etching if desired, and the rear surface is further formed with an oxide film by thermal oxidation if desired, whereby a semiconductor substrate exhibiting an intense gettering effect is manufactured.

Semiconductor substrate and a manufacturing method thereof

Growing community of inventors

Fujimi, Japan

Shigeru Aoki