Hitachi-kokusai Electric Inc.

Shigeo Nakada

Takayuki Nakada

Hiroyuki Mori

Shinya Morita

Shuhei Saido

Akihiro Sato

Akinori Tanaka

Tomoyuki Matsuda

Makoto Inagaki

Hiromu Matsumoto

This image pickup element unit is provided with: an image pickup element substrate having mounted thereon an image pickup element that converts inputted light into electric signals; and a temperature adjusting member for adjusting the temperature of the image pickup element. The image pickup element unit is configured such that: the temperature adjusting member is configured to have a recessed section, and include a left-side member, a right-side member, an upper-side member, a lower-side member, and a rear-side member of the recessed section; the image pickup element is disposed to be surrounded by the left-side member, the right-side member, the upper-side member, the lower-side member, and the rear-side member; and the image pickup element unit is attached to the image pickup element substrate by having the rear-side member therebetween.

Image pickup element unit and image pickup apparatus with heat generating member

A substrate processing apparatus comprises a processing chamber for processing a substrate, a substrate supporting tool for supporting and carrying the substrate into the processing chamber, a standby chamber formed below the processing chamber for holding the substrate supporting tool in standby, a gas supply unit provided on the side of the standby chamber for supplying inert gas or gas containing oxygen into the standby chamber, a gas exhaust unit provided on the side of the standby chamber and opposite to the gas supply unit, for exhausting the inert gas or gas containing oxygen from the standby chamber, a first gas exhaust path connected to the gas exhaust unit for exhausting the inert gas or gas containing oxygen within the gas exhaust unit, a second gas exhaust path connected to the side of the gas exhaust unit for exhausting the gas containing oxygen within the exhaust gas unit, and a gate valve for opening and closing the second gas exhaust path.

Substrate processing apparatus for semiconductor devices

Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a non-metallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold includes a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.

Substrate processing apparatus and method of manufacturing semiconductor device

Growing community of inventors

Toyama, Japan

Shigeo Nakada