Chubu Electric Power Company, Inc.

Tanaka Kikinzoku Kogyo K.k.

Noritake Co., Ltd.

Dowa Mining Co., Ltd.

Other

Mitsubishi Heavy Industries Limited

The Furukawa Electric Co., Ltd.

Fujikura Limited

Dowa Electronics Materials Co., Ltd.

Kcm Corporation

Mitsubishi Shipbuilding Co., Ltd.

Tanaka Kikinzoku Kogyo Kabushiki Kaisha

Shigeo Nagaya

Naoji Kashima

Kunihiro Shima

Kiyoshi Komura

Hisatomi Taguchi

Hirofumi Hoshino

Shuichi Kohayashi

Tomonori Watanabe

Shuichi Kubota

Yasunori Ando

Takashi Saito

Shuji Yoshizawa

Shuetsu Haseyama

Balagopal N Nair

Kazunori Onabe

Atsushi Fukaya

Kazuyuki Uemura

Nobuyuki Sadakata

Yasuhiro Iijima

Osamu Kohno

Hitoshi Kondo

Seiji Yamada

Yoshimasa Ohashi

Masaru Oka

Akinobu Nakai

Taichi Yamaguchi

Akihiro Kawahara

Yosuke Takahashi

Takehiro Suzuki

Ryusuke Nakasaki

Shigekazu Mase

Junichiro Tsubaki

Naoki Hirano

Hiroshi Seo

Sai Hiramatsu

Ryosuke Suganuma

Syozo Watanabe

Kiichi Hirano

Hiroshi Tenjikukatsura

Tsutomu Tamada

The present invention provides a textured substrate for forming an epitaxial film, including a textured metal layer on at least one surface of the layer, the textured metal layer including a copper layer having a cube texture, the textured metal layer having, on a surface of the layer, palladium added in an amount of 10 to 300 ng/mmper unit area, the hydrogen content of the surface of the textured metal layer being 700 to 2000 ppm. This textured substrate is produced through a step of adding 10 to 300 ng/mmper unit area of palladium by strike plating to a surface of the copper layer having a cube texture.

Textured substrate for forming epitaxial film and method for producing the same

A method for manufacturing a superconducting wire material in which the superconducting current is not saturated even when a superconducting layer is made into a thick film, and a superconducting wire material. In the method a superconducting layer is formed on a metal substrate interposed by an intermediate layer, the method including heating the metal substrate up to the film-formation temperature of a superconducting film for forming the superconducting layer, forming a superconducting film having a film thickness of at least 10 nm and no more than 200 nm on the intermediate layer, and reducing the metal substrate temperature to a level below the film-formation temperature of the superconducting film, and the superconducting film-formation, including the heating, the film-formation, and the cooling, are performed a plurality of times.

Method for manufacturing superconducting wire, and superconducting wire

The present invention relates to a textured substrate for epitaxial film formation, comprising a textured metal layer at least on one side, wherein the textured metal layer includes a copper layer having a cube texture and a nickel layer having a thickness of 100 to 20000 nm formed on the copper layer; the nickel layer has a nickel oxide layer formed on a surface thereof, having a thickness of 1 to 30 nm, and including a nickel oxide; and the nickel layer further includes a palladium-containing region formed of palladium-containing nickel at an interface with the nickel oxide layer. The top layer of the textured substrate, i.e. the nickel oxide layer, has a surface roughness of preferably 10 nm or less.

Textured substrate for epitaxial film formation, and method for manufacturing the same

A liquefied gas reliquefier reliquefies boil-off gas resulting from evaporation of liquefied gas in a liquefied-gas storage tank to prevent a rise in the internal pressure of the liquefied-gas storage tank. The liquefied gas reliquefier includes a cooling unit for liquefying a secondary refrigerant, a liquefied-secondary-refrigerant feeding unit for feeding the liquefied secondary refrigerant, and a heat exchange unit disposed in the secondary-refrigerant circulating channel to condense the BOG by heat exchange between the BOG and the liquefied secondary refrigerant. The heat exchange unit is disposed near the liquefied-gas storage tank. The cooling unit includes a plurality of pulse-tube refrigerators. The number of pulse-tube refrigerators in operation and/or the cooling capacities of the individual pulse-tube refrigerators are controlled based on a measurement result from at least one of a thermometer, a pressure gauge, and a pump discharge flow meter installed in the liquefied-gas storage tank.

Liquefied gas reliquefier, liquefied-gas storage facility and liquefied-gas transport ship including the same, and liquefied-gas reliquefaction method

The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100}&#x3c;001&#x3e; cube texture in which a deviating angle &#x394;&#x3c6; of crystal axes satisfies &#x394;&#x3c6;&#x2266;9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process.

Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same

The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100}&#x3c;001&#x3e; cube texture in which a deviating angle &#x394;&#x3c6; of crystal axes satisfies &#x394;&#x3c6;&#x2266;7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process.

A method for manufacturing a oriented substrate for forming an epitaxial thin film thereon, having a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The clad textured metal substrate includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100}&#x3c;001&#x3e; cube texture in which a deviating angle &#x394;&#x3c6; of crystal axes satisfies &#x394;&#x3c6;&#x2266;6 degree. The substrate has an intermediate layer on the surface of the copper layer, to form the epitaxial thin film thereon.

Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (&#x394;&#x3c6; and &#x394;&#x3c9;) in the textured metal layer surface and orientation degrees (&#x394;&#x3c6; and &#x394;&#x3c9;) in the crystal orientation improving layer surface are both 0.1 to 3.0&#xb0;. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.

Textured substrate for epitaxial film formation and surface improving method of textured substrate for epitaxial film formation

A support for an oxygen separation membrane element to support a dense and cylindrical electrolytic membrane having oxygen ion permeability, comprises a base axially extending and having a cylindrical surface extending axially, and a plurality of ribs formed on the cylindrical surface of the base, radially projecting and axially extending, for supporting the electrolytic membrane at their ends being radially distant from the cylindrical surface of the base.

Support for oxygen separation membrane element and the element using the same

A clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the metallic layer, wherein the copper layer has a {100}&#x3c;001&#x3e; cube texture in which a deviating angle &#x394;&#x3c6; of crystal axes satisfies &#x394;&#x3c6;&#x2266;6 degree. The clad textured metal substrate has an intermediate layer on the surface of the copper layer to form the epitaxial thin film thereon. The intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.

The present invention provides methods for making a microporous ceramic material using a metal silicon powder and including a reaction sintering process of the silicon. A material for forming a microporous ceramic material used in these methods includes a metal silicon powder, a silicon nitride powder and/or a silicon carbide powder, and if desired, a yttrium oxide powder and/or an aluminum oxide powder. These methods can make a microporous ceramic material that can be used preferably as a gas or liquid filter, a catalyst carrier or a support of a gas separation membrane.

Microporous ceramic materials

It is an object of the present invention to provide a ceramic member with excellent balance between oxygen ion conductivity and endurance (resistance to cracking and the like), an oxygen ion permeation module and a chemical reactor such as an oxygen separator, using such a ceramic member. The ceramic member with oxygen ion conductivity in accordance with the present invention has a perovskite-type crystal structure and a composition represented by the general formula:()()(where Ln represents at least one element selected from lanthanoids, and M represents at least one element selected from the group containing Sr, Ca, and Ba, 0&#x3c;x&#x3c;1, 0.4&#x2266;y&#x3c;1, x+y&#x2267;1). The oxygen ion permeation module composed by employing such a ceramic member can be used as a structural component of an oxygen separator, an oxidation reactor (for example, a reactor for partial oxidation of hydrocarbons), and the like.

Ceramic member with oxygen ion conductivity and use thereof

An oxide superconductor current lead in which generation of Joule heat at joint portions with a system side conductor and a power supply side conductor is reduced with use of an oxide superconductor with less heat penetration into a super conducting equipment system is provided. A columnar oxide superconductor molten bodies (interelectrode superconductor, in-electrode superconductorsand) are produced, the in-electrode superconductorand a left end portion of the interelectrode superconductorare placed into a power supply side metallic electrode, and the in-electrode superconductorand a right end portion of the interelectrode superconductorare similarly placed in a system side metallic electrode, then degassed joining metal is used to join them to form an oxide superconductor current lead, a power supply side conductorfrom a power supply is joined to the power supply side metallic electrode, and a system side conductorfrom a superconducting system side is joined to the system side metallic electrodewith use of respective clampsand

Oxide superconductor current lead and method of manufacturing the same, and superconducting system

It is an object of the present invention to provide a raw material powder for stably obtaining a dense sinter that is prevented from cracking, and a method for manufacturing this powder, and a method for manufacturing a lanthanum-based oxide ion conductor in which this raw material powder is used. The raw material powder manufacturing method of the present invention is a method for manufacturing a raw material powder for forming an oxide ion conductor composed of a multi-component metal oxide including lanthanum or lanthanide, wherein a mixed powder blended such that all of the elements constituting said multi-component metal oxide are included is prefired, after which this prefired powder is exposed to water or moist gas so as to expand at least some of the particles in said powder. Alternatively, two types of mixed powder with different components are prefired separately, after which the prefired powders are blended in a specific ratio.

Raw material powder for molding oxide ion conductor, and method for manufacturing the same

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Nagoya, Japan

Shigeo Nagaya