Idemitsu Kosan Company, Limited

Other

Kyocera Corporation

Shigeo Matsuzaki

Shigekazu Tomai

Kazuaki Ebata

Koki Yano

Kazuyoshi Inoue

Yuki Tsuruma

Takashi Arakane

Susumu Kikuchi

Hisashi Mukataka

Yuji Kamiyama

Kazuo Murakata

Makoto Ando

Minoru Senga

Tsuyoshi Ota

Kota Terai

Nobuo Tanaka

Tokie Tanaka, Legal Representative

Masayuki Itose

Masato Matsubara

Mami Nishimura

Kouichi Matono

Masashi Ohyama

Yukio Shimane

Kunitoshi Imura

A sputtering target comprising an oxide sintered body that includes an indium element, a tin element and a zinc element, wherein the oxide sintered body includes one or more selected from a hexagonal layered compound represented by InO(ZnO), a hexagonal layered compound represented by InXO(ZnO), a rutile structure compound represented by SnOand an ilmenite structure compound represented by ZnSnO, and a spinel structure compound represented by ZnSnO, in the formulas, X is a metal element that can form a hexagonal layered compound together with an indium element and a zinc element, m is an integer of 1 or more and n is an integer of 1 or more, and an agglomerate of the spinel structure compound is 5% or less of the entire sintered body.

Sputtering target

A sputtering target including a sintered body:

A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 &#x3bc;mor more in an amount of 0.03 vol % or less.

Sintered material, and process for producing same

A thin film transistor () includes a source electrode (), a drain electrode (), a gate electrode (), a gate insulating film (), and a channel layer () that is formed of an oxide semiconductor, the channel layer () having an average carrier concentration of 1&#xd7;10/cmto 5&#xd7;10/cm, and including a high carrier concentration region () that is situated on the side of the gate insulating film () and has a carrier concentration higher than the average carrier concentration, and the channel layer () having a substantially homogenous composition.

Thin-film transistor

A sputtering target including a sintered body including In, Ga and Mg,

A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 10/cmor less and an average crystal diameter of 1 &#x3bc;m or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.

Laminate structure including oxide semiconductor thin film layer, and thin film transistor

A method for producing a lithium ion conductive solid electrolyte including the step of bringing one or more compounds selected from phosphorous sulfide, germanium sulfide, silicon sulfide and boron sulfide into contact with lithium sulfide in a hydrocarbon-based solvent.

Method for producing lithium ion conductive solid electrolyte

An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B&#x3e;1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B.

Amorphous transparent conductive film, target and production method for amorphous conductive film

A sputtering target containing a hexagonal laminar compound formed of indium oxide and zinc oxide and represented by InO(ZnO)wherein m is an integer of 2 to 7 and further contains 0.01 to 1 at % of an oxide of a third element having a normal valence of 4 or more, and a transparent electrically conductive film formed therefrom. The sputtering target has a low volume resistivity and permits stable sputtering. The transparent electrically conductive film is excellent in etchability.

Sputtering target and transparent conductive film

A semiconductor deviceobtained by depositing, on a substrate, a gate electrodeformed by a conductive thin film containing Mo atoms and Ag atoms, a gate insulating film, an &#x3b1;-Si:H(i) film, a channel protection layer, an &#x3b1;-Si:H(n) film, a source/drain electrodeformed by a conductive thin film containing Mo atoms and Ag atoms, a source/drain insulating film, and a drive electrode. By using a conductive thin film containing Mo atoms and Ag atoms, the gate electrodeand the source/drain electrodeare formed to manufacture the semiconductor device. Thus, the conductive thin film for a semiconductor device, having high adhesion strength to a substrate, an insulating layer, and the like, a semiconductor device which operates stably without deteriorating the performance, and a method of efficiently manufacturing the conductive thin film and the semiconductor device can be provided.

Conductive thin film for semiconductor device, semiconductor device, and method of manufacturing the same

Carrier for electrophotography, method for producing the same carrier, and developing agent for electrophotography using same

An electrophotographic carrier, which has high charging characteristics and an excellent durability, does not dull a color image and has an excellent moisture resistance is provided. A process for the production of the carrier and a developing agent for electrophotography using the carrier are also provided. The electrophotographic carrier comprises a carrier core material provided with magnetism and a coating layer formed on the surface of the carrier core material, the coating layer containing at least a hydrophobic white conductive material and a high molecular weight polyethylene resin.

Carrier for electrophotography, process for production of the carrier and developing agent for electrophotography using the carrier

A carrier for electrophotography includes a carrier core material provided with magnetism and a coating layer which coats the surface of the carrier core material and includes a high molecular weight polyethylene resin having a weight average molecular weight of 50,000 or more. An outermost layer containing a magnetic powder having a three-dimensional form of a convex polyhedron is formed on the outermost surface of the coating layer.

Carrier for electrophotography and developer for electrophotography using the carrier

Disclosed is an electrophotographic carrier comprising a magnetic carrier core and a coating layer composed of a high molecular weight polyethylene resin with which the carrier core is coated, wherein the coating layer composed of a high molecular weight polyethylene resin includes a layer containing hydrophobic silica, a magnetic powder, and/or a micropowdered resin at least as the outermost layer.

Growing community of inventors

Sodegaura, Japan

Shigeo Matsuzaki