Tokyo Shibaura Denki Kabushiki Kaisha

Kanto Chemical Co., Inc.

Shigeo Koguchi

Toshio Yonezawa

Tiharu Kato

Hatsuo Nakamura

Shunichi Hiraki

Kiyoto Mori

Kuniaki Kumamaru

Hiroshi Kinoshita

Toshihiro Abe

Masahiko Igarashi

There is proposed a negative-working photoresist coating composition of an improved resolution, which comprises a cyclized polyisoprene having a weight-average molecular weight of 10,000 to 100,000 and a molecular weight distribution of not more than 1.9, an organic solvent of the cyclized polyisoprene, and a bisazido compound as a crosslinking agent.

Negative-working photoresist coating composition

A process for producing a semiconductor device by which the minority carrier lifetime can be selectively changed in a semiconductor device. A radiation beam is irradiated onto the surface of a semiconductor substrate to shorten the minority carrier lifetime. Then ions are selectively implanted into a region in which the minority carrier lifetime is to be recovered. Finally, the resultant structure is annealed.

Method of making integrated devices having long and short minority

An improved method of forming a photoresist pattern in the photoengraving process. In the photoengraving process, after forming a photoresist layer, a non-photosensitive organic layer containing cyclized polyisoprene rubber as the major constituent is formed thereover. The organic layer is covered with a mask. The photoresist layer is selectively exposed to light through the organic layer. After developing and removing the organic layer, or together with the organic layer, the photoresist layer is developed.

Method for forming resist pattern

Growing community of inventors

Kitakyushu, Japan

Shigeo Koguchi