Sharp Kabushiki Kaisha Corporation

Nichia Corporation

Other

Murata Manufacturing Co., Ltd.

Sumitomo Chemical Company, Limited

California Institute of Technology

Kansai Technology Licensing Organization Co., Ltd.

Seiwa Electric Mfg. Co., Ltd.

Shigeo Fujita

Yoichi Kawakami

Mototaka Taneya

Takatomo Sasaki

Tatsuya Morioka

Yusuke Mori

Masaya Ishida

Daisuke Hanaoka

Masafumi Harada

Axel Scherer

Isamu Niki

Koichi Okamoto

Yukio Narukawa

Mitsuru Funato

Shizuo Fujita

Susumu Fukuda

Yoshinobu Matsuda

Jun-ichi Shimada

Akio Sasaki

A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nmor less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Light-emitting apparatus, phosphorescent portion, and method of producing the same

Light-emitting apparatus, phosphor and method of producing it

The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recessesare formed by etching in the first electrically conductive (n) type semiconductor layerformed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.

Nitride semiconductor device, and its fabrication process

A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III&#x2013;V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nmor less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

Light-emitting apparatus, phosphor, and method of producing it

The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.

Nitride semiconductor device and a process of manufacturing the same

A gazing point illuminating device is provided with: a light source; a direction changing mechanism for changing the lighting direction of the light source; a gazing direction detector for detecting the direction of the user's gazing line; and a controller for changing the lighting direction corresponding to the detected gazing direction. When, LEDs are used as the light source, and the light source is attached to the goggles worn by a user, the goggles can be useful gazing point illuminating device by themselves even if they do not include gazing point or direction detectors, because a person normally look straight ahead except for unusual occasions where he/she purposefully avert his/her gaze. Thus, an illuminating device fixed to a person's head for lighting forward is a gazing point illuminating device. It is preferred to provide an LED panel at the left and right ends of goggles.

Gazing point illuminating device

ZnSSE mixed crystal semiconductors and ZnCdSe mixed crystal semiconductors are alternately laminated on a single crystal substrate composed of a III-V or II-VI compound to form a light emitting semiconductor device of a multilayer structure so that electrons and holes are efficiently confined therein. This increases the carrier recombination probability and emission efficiency. A device may be arranged where mixed crystal semiconductors of two types respectively having different component compositions of Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 and Zn.sub.1-x2 Cd.sub.x2 S.sub.y2 Se .sub.1-y2 are alternately laminated on a single crystal substrate composed of a III-V or II-VI compound such that the ratio of components of the mixed crystal semiconductors of two types satisfies the relationship that x.sub.1 is smaller than x.sub.2 and y.sub.1 is greater than y.sub.2. Alternately, a device may be arranged where a Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y layer is formed on a single crystal substrate composed of a III-V or II-VI compound, a Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 layer is formed on the Zn.sub. 1-x Cd.sub.x S.sub.y Se.sub.1-y layer, and a ZnS.sub.y2 Se.sub.1-y2 layer is formed on the Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1, such that each of the Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y and the ZnS.sub.y2 Se.sub.1-y2 has a lattice constant substantially equal to that of the substrate and the Zn.sub.1-x1 Cd.sub.x1 S.sub.y1 Se.sub.1-y1 has a lattice constant different from that of the substrate.

Light emitting semiconductor device having multilayer structure

A MISFET includes a GaAs substrate, a gate insulating film of a II-VI group compound including Zn, Mg, S, and Se epitaxially grown on the GaAs substrate, and a gate electrode formed on the gate insulating film.

MISFET including GaAs substrate and a Group II-VI gate insulator

A zinc selenide or zinc selenide-sulphide epitaxial crystal is grown at a growth temperature of about 180.degree.-320.degree. C. by organometallic chemical vapor deposition by using zinc alkyl and hydrogen selenide and/or hydrogen sulphide. An as-grown crystal presented an n conductivity type low resistivity and exhibited a narrow near-band gap emission peak. Besides a crystal of the same material as the epitaxial layer, crystals of group III-V, group IV, and so forth having the same or similar crystal structure as the epitaxial layer can be used as an underlayer for the growth.

Vapor phase epitaxial growth method of zinc selenide and zinc

Growing community of inventors

Kyoto, Japan

Shigeo Fujita