Kyocera Corporation

Shigeo Aono

Shiro Miyazaki

Tomofumi Honjo

Koichiro Niira

Hironori Kii

Kouji Miyamoto

Kenichi Kurobe

Koji Niwa

Masahiro Tanaka

Yosuke Nishioka

To improve characteristics, reliability, and the like of a solar cell element, the solar cell element includes: a semiconductor substrate which includes a first main surface and a second main surface that is positioned opposite to the first main surface, and in which a p-type semiconductor region and an n-type semiconductor region are stacked in such a manner that the p-type semiconductor region is positioned closest to the first main surface and the n-type semiconductor region is positioned closest to the second main surface; a first passivation layer which is disposed on the p-type semiconductor region that is positioned closest to the first main surface, and which includes aluminum oxide; and a first protective layer that is disposed on the first passivation layer. The first protective layer includes an oxide that contains at least one kind of zirconium and hafnium.

Solar cell element

This solar cell element, which is increased in the conversion efficiency due to improved effect of passivation, includes a semiconductor substrate in which a p-type first semiconductor region and an n-type second semiconductor region are stacked such that the first semiconductor region is located nearmost a first principal surface side and the second semiconductor region is located nearmost a second principal surface side; and a first passivation film containing aluminum oxide and arranged on the first principal surface side of the first semiconductor region. In the inside of the first passivation film of the solar cell element, the first ratio obtained by dividing the aluminum atomic density by the oxygen atomic density is 0.613 or more and less than 0.667 and the second ratio obtained by dividing the sum of the aluminum atomic density and the hydrogen atomic density by the oxygen atomic density is 0.667 or more and less than 0.786.

The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate () formed from silicon; a first film-formation step for the formation of a first protective film () by deposition of aluminum oxide on a top surface (B) of the substrate () using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film () by deposition of aluminum oxide on the first protective film () using sputtering after the first film-formation step. Moreover, the photoelectric converter of the present invention comprises a substrate formed from silicon; a first protective film formed from aluminum oxide; and a second protective film formed from aluminum oxide, wherein the concentration of hydrogen contained in the first protective film is higher than the concentration of hydrogen contained in the second protective film.

Method for producing photoelectric converter and phtotelectric converter

The invention relates to a circuit board, and an image forming apparatus, a thermal head and an image sensor that employ the circuit board. A circuit board includes a substrate, a conductor which is situated on the substrate and has a groove formed on its surface, and a wire connected to the conductor. The groove surrounds a connection area between the wire and the conductor, excluding a part of the connection area defining an opening (X).

Growing community of inventors

Kyoto, Japan

Shigeo Aono