Hosiden Electronics Co., Ltd.

Hosiden Corporation

Hosiden Electronics, Ltd.

Nippon Telegraph and Telephone Corporation

Shigeo Aoki

Yasuhiro Ukai

Junichi Tamamura

Yasuhiro Ugai

Katsumi Miyake

Kotaro Okamoto

Masaru Yasui

Tomihisa Sunata

Yasuhiro Matsushita

Takanobu Nakagawa

Shuzo Isogami

Tatsuo Nagayoshi

Kinya Kato

Tsutomu Wada

Hiroshi Saito

Tadamichi Kawada

Motomi Hosoda

Nobuhiko Kakuda

Susumu Hirao

Kiyoshi Taruta

Hideo Morita

Masamichi Okamura

Minoru Shibazaki

Liquid crystal is encapsulated between two transparent substrates 16, 17. Pixel electrodes 13 are formed on the inner surface of the transparent substrate 17 in the form of a matrix while a common electrode 12 is formed on the inner surface of the transparent substrate 16. Each pixel electrode 13 is divided into subpixel electrodes 13.sub.1, 13.sub.2. The subpixel electrode 13.sub.1 is connected to the drain of a thin film transistor 21 formed adjacent the subpixel electrode to apply driving voltage to the electrode. The subpixel electrode 13.sub.2 is supplied with capacitance-divided driving voltage through a capacitor comprising the electrode 13.sub.1, and a control capacitor 15 connected thereto with an insulation layer 14 interposed therebetween. Each of the subpixel electrodes 13.sub.1, 13.sub.2 are divided into two domains on which are formed alignment layers 41a, 41b, 42a, 42b, in opposition to alignment layers 43a, 43b, 44a, 44b formed on the common electrode 12. One of the opposed alignment layers is adapted to impart to the liquid crystal a pretilt angle greater than the other alignment layer. One of a pair of adjacent orientating films in the same plane is adapted to impart to the liquid crystal a pretilt angle greater than the other orientating film.

Gray scale multi domain liquid crystal display panel having capacitive

In an active matrix structure for liquid crystal display elements which includes pixel electrodes arranged in a matrix form on a glass base plate, thin film transistors having their drains connected to the pixel electrodes, respectively, data lines each connected to sources of the thin film transistors of one column and gate lines connected to gates of the thin film transistors of one row, there are provided in the same plane a light blocking layer disposed opposite each of the thin film transistors across an insulating layer, a storage capacitance electrode disposed partly opposite each of the pixel electrodes across the insulating layer and storage capacitance lines for interconnecting the capacitance electrodes. The light blocking layers, the storage capacitance electrodes and the storage capacitance lines are formed of the same material and at the same time.

Active matrix structure for liquid crystal display elements wherein each

A thin-film transistor comprises a source electrode and a drain electrode formed in a spaced-apart relation to each other on a substrate, a semiconductor layer formed over the source and drain electrodes, a gate insulating film formed on the semiconductor layer and a gate electrode on the gate insulating film. First and second ohmic contact layers are formed in the entirety of the surface regions of the semiconductor layer which are in contact with the source and drain electrodes.

Method of fabricating a thin-film transistor

In projection device light from a point light source unit is reflected by a first reflecting mirror to produce parallel rays, which are applied to a color active matrix liquid crystal display unit. The parallel rays having passed through the liquid crystal display unit are converted by a second reflecting mirror into a bundle of rays of a desired solid angle for projection onto a screen.

Projector

A liquid crystal display device comprises, a plurality of display electrodes which are selectively energized through on-off control of thin film transistors. In order to reduce the channel length of the thin film transistors to increase operation speed and obtain uniform characteristics each display electrode and an associated transistor source electrode is formed on one of a pair of transparent substrates of the liquid crystal display device, a semiconductor layer is formed between the display electrode and source electrode, a gate insulating film is formed on the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film between the display electrode and source electrode. Then, ions are implanted into the semiconductor layer with the gate electrode used as a mask, thus rendering portions of the semiconductor layer contiguous to the display electrode and source electrode into ohmic layers. A channel is thus obtained between the ohmic layers with its length determined by the length of the gate electrode.

Method of manufacturing liquid crystal display device

A liquid crystal display device comprises a plurality of display electrodes which are selectively energized through on-off control of thin film transistors. In order to reduce the channel length of the thin film transistors to increase operation speed and obtain uniform characteristics, each display electrode and an associated transistor source electrode is formed on one of a pair of transparent substrates of the liquid crystal display device, a semiconductor layer is formed between the display layer and source electrode, a gate insulating film is formed on the semiconductor electrode, and a gate electrode is formed on a portion of the gate insulating film between the display electrode and source electrode. Then, ions are implanted into the semiconductor layer with the gate electrode used as a mask, thus rendering portions of the semiconductor layer contiguous to the display electrode and source electrode into ohmic layers. A channel is thus obtained between the ohmic layers with its length determined by the length of the gate electrode.

Liquid crystal display device and method of manufacturing the same

A color liquid crystal display device comprises first and second transparent substrates, and a liquid crystal sealed therebetween. A plurality of display electrodes and thin film transistors each connected to each of the display electrodes are formed on the first transparent substrate. Color filters are formed on the second transparent substrate such that they each face each of the display electrodes. A common electrode is also formed over the entire surface of the second transparent electrode. The gap between adjacent color filters is closed by a metal layer capable of blocking light. These light-blocking layers overlie the common electrode in contact therewith.

Color liquid crystal display device

A liquid-crystal cell is formed with first and second transparent substrates opposing each other and a liquid crystal sealed therebetween. A plurality of display electrodes are formed in a matrix arrangement with rows and columns on the inner surface of said first transparent substrate. Gate bus lines are formed on the first transparent substrate along the respective rows of display electrodes. Source bus lines are formed on the first transparent substrate along the respective columns of display electrodes. Thin-film transistors are formed on the first transparent substrate at the intersections of a gate and source bus lines. The thin-film transistors each have a gate electrode connected to the associated gate bus line, a source electrode connected to the associated source bus line and the drain electrode connected to the corresponding display electrode. A common electrode is formed on the second transparent substrate such that it faces the display electrodes. The opposed sides of the source and drain electrodes of each thin-film transistor are constituted by tapered surfaces with the distance therebetween progressively decreased as they approach the first transparent substrate. Ohmic contact layers are formed on these tapered surfaces. A semiconductor of each thin-film transistor is formed over the source and drain electrodes via the ohmic contact layers.

Liquid-crystal display device employing a common electrode consisting of

Thin-film transistor and method of fabricating the same

In a thin film transistor which has an active layer formed between source and drain electrodes, a gate insulating film formed in contact with the active layer, and a gate electrode formed in contact with the gate insulating film, the photoconductivity of the active layer is reduced by forming the active layer of amorphous silicon carbide (a-Si.sub.1-x C.sub.x) whose carbon content x is greater than 0.1.

Thin film transistor

A liquid-crystal cell is formed with first and second transparent substrates opposing each other and a liquid crystal sealed therebetween. A plurality of display electrodes are formed in a matrix arrangement with rows and columns on the inner surface of said first transparent substrate. Gate bus lines are formed on the first transparent substrate along the respective rows of display electrodes. Source bus lines are formed on the first transparent substrate along the respective columns of display electrodes. Thin-film transistors are formed on the first transparent substrate at the intersections of the gate and source bus lines. The thin-film transistors each have a gate electrode connected to the associated gate bus line, a source electrode connected to the associated source bus line and the drain electrode connected to a corresponding display electrode. A common electrode is formed on the second transparent substrate such that it faces the display electrodes. The opposed sides of the source and drain electrodes of each thin-film transistor are constituted by tapered surfaces with the distance therebetween being progressively decreased as they approach the first transparent substrate. Ohmic contact layers are formed on these tapered surfaces. A semiconductor of each thin-film transistor is formed over the source and drain electrodes via the ohmic contact layers.

Liquid-crystal display device

A liquid crystal cell comprises a liquid crystal sealed between a pair of confronting transparent substrates. A multiplicity of semiconductor driver elements are substantially uniformly distributed over an inner surface of one of the substrates. The semiconductor driver elements have output electrodes connected respectively to matrix element electrodes formed on the inner surface of said one of the substrates. A driver circuit is formed as a semiconductor integrated circuit on an extension of the inner surface of said one of the substrates for selectively driving the semiconductor driver elements.

Dot-matrix liquid crystal display

A transmitting type display device is disclosed, which comprises a transmitting type display panel to provide a display on the front surface, a light source for producing light illuminating the back surface of the transmitting type display and a brightness controller for controlling the intensity of light from the light source. The device comprises an ambient light detector disposed near the transmitting type display panel for detecting the intensity of ambient light incident on the display surface of the transmitting type display panel, and the brightness controller for controlling the light source according to the detection output of the ambient light detector such that the intensity of light from the light source to the transmitting type display panel is increased with an increase of the detected light intensity.

Transmitting type display device

A liquid crystal cell comprises a liquid crystal sealed between a pair of confronting transparent substrates. A multiplicity of semiconductor driver elements are substantially uniformly distributed over an inner surface of one of the substrates. The semiconductor driver elements have output electrodes connected respectively to matrix element electrodes formed on the inner surface of said one of the substrates. A driver circuit is formed as a semiconductor integrated circuit on an extension of the inner surface of said one of the substrates for selectively driving the semiconductor driver elements. The driver circuit comprises a plurality of thin-film transistors each of which includes a semiconductor layer which has enhanced carrier mobility achieved through annealing.

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Habikino, Japan

Shigeo Aoki