Tokyo Electron Limited

Sinfonia Technology Co., Ltd.

Tohoku University

Kajima Corporation

Asahi Rubber Inc.

Shimadzu Corporation

Entegris, Inc.

Shigenori Ozaki

Toshio Nakanishi

Seiji Matsuyama

Takuya Sugawara

Masaru Sasaki

Yoshihide Tada

Genji Nakamura

Hitoshi Kato

Kazuhide Hasebe

Yoshihiro Sato

Junichi Kitagawa

Shigeru Nakajima

Kenichi Kagawa

Koichi Takatsuki

Tomonori Fujiwara

Hikaru Adachi

Tomoaki Kurakazu

Hiroyuki Kikuchi

Yutaka Fujino

Takeshi Kumagai

Shigehiro Ushikubo

Tadahiro Ohmi

Taro Ikeda

Takashi Suzuki

Yasuhiro Oshima

Shigemi Murakawa

Shinji Ide

Shinichi Gomi

Yoshio Kimura

Akinobu Teramoto

Eiki Kamata

Toshihiro Kawai

Katsuyuki Hishiya

Gregory W Bores

Tomohito Komatsu

Yoshiro Kabe

Akitake Tamura

Tatsuya Tamura

Takashi Shigeta

Yoshio Kinoshita

Haruki Takeuchi

Atsushi Ueda

Jun Nakagomi

Yusuke Yoda

Satoshi Itoh

Atsushi Nishida

Hisashi Gomi

Masashi Imanaka

Kunitada Hatabayashi

Kazuhiro Isa

Tsutomu Takano

Kentaro Tomita

Yoshimasa Suda

Soudai Emori

Ryoji Shiina

Masaru Sasakii

Hideyuki Noguchi

Hajime Fujinaga

Toshimitsu Fuji

Yuya Ubukata

Masatoshi Takahashi

There is provided a plasma processing apparatus that converts a gas supplied into a processing container into a plasma to process a substrate, the plasma processing apparatus including: a microwave introduction window disposed in each of a plurality of openings formed in a ceiling wall of the processing container, the microwave introduction window being configured to supply power of microwaves into the processing container; and a plurality of grooves formed on the ceiling wall to surround the openings respectively, wherein widths between the grooves and the openings are not uniform with respect to circumferential directions of the openings.

Plasma processing apparatus and ceiling wall

A film deposition method includes steps of: placing a substrate in a substrate receiving area of a susceptor provided in a vacuum chamber; evacuating the vacuum chamber; alternately supplying plural kinds of reaction gases to the substrate in the substrate receiving area from corresponding reaction gas supplying parts thereby to form a thin film on the substrate; supplying plasma including a chemical component that reacts with second reaction gas adsorbed on the substrate from a plasma generation part to the substrate when the thin film is being formed, thereby to alter the thin film on the substrate; and changing plasma intensity of the plasma supplied to the substrate, at a predetermined point of time to a different plasma intensity of the plasma that is generated and supplied to the substrate by the plasma generation part before the predetermined point of time.

Film deposition method and computer program storage medium

There is provided a method for easily determining an undifferentiated state of pluripotent stem cells without relying on the judgment of a skilled technician. The method includes: a step of evaluating an undifferentiated state of pluripotent stem cells based on a time-dependent change in a variation value of an extracellular metabolite contained in a culture medium in which the pluripotent stem cells are cultured, wherein the extracellular metabolite is at least one selected from a group consisting of L-glutamic acid, L-alanine and ammonia.

Method for determining undifferentiated state of pluripotent stem cells by culture medium analysis

Gas is circulated in an entire transportation space. A robot transport device includes a transportation space in which a transport robot is provided and circulation passages by which gas in the transportation space is circulated. Around the transportation space, surrounding spaces are provided. To these surrounding spaces, an object is transported by the transport robot. The transportation space communicates with each of the surrounding spaces via each of openings. The circulation passages are provided to sandwich the transportation space to avoid a working area of the transport robot, including the openings. The circulation passages are provided in pillar portions forming the transportation space.

Robot transport device

A cell-holding container comprises: an elastic body for holding cells including at least any one of adherent cells at least one selected from the group consisting of stem cells, progenitor cells, somatic cells and germ cells, and suspended cells at least one selected from the group consisting of blood cells, T cells and B cells; and the elastic body is formed of a rubber material containing a rubber component including an additional crosslinking silicone rubber and is able to hold the cells.

Cell-holding container and cell culture method using same

In order to culture the pluripotent stem cell which can be variously differentiated, while preventing the cross contamination between the different cells and securing the safety of the products; extending a main transport pathoutwardly from a stem cell conditioning area, the stem cell conditioning areaincluding a treatment roomfor inducing pluripotent stem cell from a somatic cell or an egg cell, or a treatment roomfor receiving and conditioning pluripotent stem cell induced in other facilities; branching at least one branched transport pathfrom the main transport path; and arranging along each branched transport path, a cell culture areaincluding culture roomstofor culturing the stem cell and an analysis roomfor analyzing the cultured cell, respectively. Preferably, the stem cell conditioning area, the cell culture areaand a transport areaincluding the main transport pathand the branched transport pathare provided with respective operator gates, (),individually, so as to prohibit coming and going of operator among the areas

Facility for culturing pluripotent stem cells

A cell culture container characterized by being equipped with a container main body and a flat plate attached onto one surface of the container main body, wherein the container main body is equipped with an inflow port through which a liquid can flow into the container main body, a passage through which the liquid flowing into the container main body from the inflow port can pass, and an outflow port through which the liquid passing through the passage can flow out from the container main body, and wherein, on the bottom surface of the passage, multiple cell-seeding areas in which cells passing through the passage can be seeded are arranged side by side along the passage.

Cell culture container

A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.

Plasma processing apparatus

A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

Film deposition apparatus, film deposition method, and computer-readable recording medium

A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

Plasma processing apparatus and microwave introduction device

A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

Film deposition method and film deposition apparatus

According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently,it is possible to improve quality of the oxynitride film, resulting in a reduced leadage current, an improved operating speed, and improved NBTI resistance.

Plasma processing method

A semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by favorable nitrogen concentration profile of a gate insulating film, and a method for manufacturing the semiconductor device. The semiconductor device fabricating method operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, including introducing an oxynitriding species previously diluted by plasma excitation gas into a plasma processing apparatus, generating an oxynitriding species by a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.

Semiconductor storage device including a gate insulating film with a favorable nitrogen concentration profile and method for manufacturing the same

An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

Method of modifying insulating film

According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.

Plasma processing method and computer storage medium

Growing community of inventors

Amagasaki, Japan

Shigenori Ozaki