Tokyo Electron Limited

Tokyo Electron Kyushu Limited

Shigenori Kitahara

Yuji Kamikawa

Naoki Shindo

Takayuki Toshima

Kinya Ueno

Hironobu Hyakutake

Kenji Yokomizo

Miyako Yamasaka

Keiji Taguchi

Satoshi Kaneko

Hiroshi Tanaka

Osamu Kuroda

Keizo Hirose

Teruomi Minami

Naoto Yoshitaka

Hiroki Taniyama

Takanori Miyazaki

Takashi Terada

Shori Mokuo

Hironobu Nishi

Tatsuya Nishida

Akira Koguchi

Shintaro Sugihara

Yoshinori Kato

Hiroko Tsuboi

Kokichi Hiroshiro

A joining device for joining substrates together includes a first holding member configured to vacuum-suck a first substrate to draw and hold the first substrate on a lower surface thereof, and a second holding member disposed below the first holding member and configured to vacuum-suck a second substrate to draw and hold the second substrate on an upper surface thereof. The second holding member includes a body portion formed into a size larger than the second substrate when seen in a plan view and configured to vacuum-suck the second substrate, a plurality of pins provided on the body portion and configured to make contact with a rear surface of the second substrate, and an outer wall portion annularly provided on the body portion at an outer side of the plurality of pins and configured to support an outer periphery portion of the rear surface of the second substrate.

Joining device and joining system

A liquid processing apparatus includes: a processing partconfigured to process an object to be processed by a process liquid; a supply pathconnected to the processing partthe supply pathbeing configured to guide the process liquid to the processing parta solvent supply partconfigured to supply a solvent to the supply pathand a chemical-liquid supply partconfigured to supply a chemical liquid to the supply paththrough a chemical-liquid supply path so as to generate a chemical liquid diluted with the solvent. A measuring partwhich is configured to measure a conductivity of the chemical liquid diluted with the solvent, is disposed in the supply path at a position downstream from a connection points, to which the chemical-liquid supply pathis connected. An additional chemical-liquid supply part, which is configured to supply an additional chemical liquid different from the chemical liquid through an additional chemical-liquid supply path, is connected to the supply path at a position downstream from a measuring pointon which the measuring partis disposed.

Liquid processing apparatus and process liquid supplying method

Disclosed is to supply processing liquid having a predetermined flow rate and concentration to substrate processing units of a substrate processing apparatus with high accuracy. The substrate processing apparatus, which processes substrates in the substrate processing units using the processing liquid supplied from a processing liquid supply part, sequentially carries the substrates to the respective substrate processing units, and controls the processing start time such that if the flow rate of the processing liquid used in one of the substrate processing units is less than the control flow rate that is controllable at the processing liquid supply part, the substrates are carried to the plurality of substrate processing units until a flow rate of the processing liquid reaches the control flow rate that is controllable at the processing liquid supply part and then the processing liquid is used simultaneously in the plurality of the substrate processing units.

Substrate processing apparatus, substrate processing method, substrate processing program, and computer readable recording medium having substrate processing program therein

Pluralities of ultrasonic transducers are arranged on the bottom wall of the cleaning tank. The output power of the ultrasonic oscillator is supplied to the transducers through the switching unit, which switches the drive mode between a first mode in which all the ultrasonic transducers are supplied with the output power and thus are excited, and a second mode in which only a part or parts of the ultrasonic transducers are supplied with the output power generated by the ultrasonic oscillator. The first mode is used when cleaning substrates not-resistant to vibration, and the second mode is used when cleaning substrates resistant to vibration.

Ultrasonic cleaning apparatus

An edge remover is provided in the vicinity of an edge portion of a wafer subjected to copper plating. An aqueous hydrogen peroxide is supplied to the edge portion of the wafer from a first nozzle provided at an inner side for a radial direction of the wafer. Next, diluted hydrofluoric acid is supplied to the edge portion of the wafer from a second nozzle provided at an outer side for the radial direction thereof.

Processing apparatus, processing system and processing method

A cleaning equipment generally comprises: a cleaning bath for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe for connecting the cleaning bath to a pure water supply source a chemical storing container for storing therein a chemical; a chemical supply pipe for connecting the cleaning solution supply pipe to the chemical storing container via an injection shut-off valve and a diaphragm pump for injecting a predetermined amount of chemical from the chemical storing container into pure water flowing through the cleaning solution supply pipe The temperature of the cleaning solution in the cleaning bath is detected by, e.g., a temperature sensor On the basis of a detection signal outputted from the temperature sensor the amount of the chemical injected by the diaphragm pump is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.

Cleaning method and cleaning equipment

A substrate processing apparatus ( ) for processing wafers (W) has a first processing chamber ( ) capable of containing the wafers (W) and a second processing chamber ( ) capable of containing the wafers (W). The second processing chamber ( ) is formed below and near the first processing chamber ( ) and is capable of communicating with the first processing chamber ( ). A wafer guide ( ) carries the wafers (W) vertically between the first and second processing chambers ( ). A shutter ( ) is opened to allow the first and second processing chambers ( ) to communicate with each other and is closed to isolate the same from each other. A steam supply system ( ) including steam supply port, an ozone gas supply system ( ) including ozone gas supply port and an IPA supply system ( ) including IPA supply port are combined with the first processing chamber ( ). A pure water supply system ( ) including pure water supply port and a draining unit ( ) including a drain pipe-line ( ) through which pure water is drained are combined with the second processing chamber ( ).

Substrate processing apparatus and substrate processing method

A cleaning tank,stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe,connects the cleaning tank,to a pure water supply source,. A chemical liquid container,stores a chemical liquid, and a chemical liquid supply pipe,connects the cleaning liquid supply pipe,to the chemical liquid container,via an infusion open/close switching valve,and a chemical liquid feed means is interposed in the chemical liquid supply pipe,. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump,. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.

Treatment apparatus

A substrate processing apparatus (,) for processing wafers (W) has a first processing chamber (,) capable of containing the wafers (W) and a second processing chamber (,) capable of containing the wafers (W). The second processing chamber (,) is formed below and near the first processing chamber (,) and is capable of communicating with the first processing chamber (,). A wafer guide (,) carries the wafers (W) vertically between the first and second processing chambers (,). A shutter (,) is opened to allow the first and second processing chambers (,) to communicate with each other and is closed to isolate the same from each other. A steam supply system (,) including steam supply port, an ozone gas supply system (,) including ozone gas supply port and an IPA supply system (,) including IPA supply port are combined with the first processing chamber (,). A pure water supply system (,) including pure water supply port and a draining unit (,) including a drain pipe-line (,) through which pure water is drained are combined with the second processing chamber (,).

Cleaning liquid supply nozzles,are provided within a processing tank,for cleaning semiconductor wafers W. A distilled water source,and the cleaning liquid supply nozzles,are connected via a distilled water supply pipeline,and a chemical supply tank,and the cleaning liquid supply nozzles,are connected via a chemical supply pipeline,. A flow-rate adjustment valve,is provided in the distilled water supply pipeline,, and the supply of distilled water from the distilled water supply pipeline,to the processing tank,and the supply of a chemical from the chemical supply pipeline,to the processing tank,are switched by a switching valve,. A temperature sensor,is disposed within the processing tank,for detecting the temperature of a processing liquid (the chemical or rinse liquid) therein and a CPU,controls the flow-rate adjustment valve,and the switching valve,on the basis of a temperature signal from the temperature sensor,, so that the time required for the processing can be determined from the temperature of the cleaning liquid, thus improving the cleaning capability and cleaning precision.

Cleaning method and apparatus

A cleaning apparatus has a processing tank (,) for containing a processing liquid in which semiconductor wafers (W) are immersed, and a tubular vessel(,) having a processing chamber (,) containing the processing tank (,). A side wall (,) of the vessel (,), and a first partition wall (,) having an upright wall (,) standing on a bottom plate (,) defining the bottom of the processing chamber (,) form a side ventilating duct (,). The bottom wall (,) of the vessel (,), and a second partition wall (,) substantially horizontally extending from the lower end of the first partition wall (,) form a bottom ventilating duct (,). The side ventilating duct (,) and the bottom ventilating duct (,) can compactly arrange devices and pipes for supplying and discharging the cleaning liquid for cleaning semiconductor wafers (W), easily maintain the devices and pipes, easily arrange a ventilating system to the cleaning apparatus, and improve ventilation efficiency.

Cleaning apparatus

A cleaning method for cleaning, an object to be, processed. The object is cleaned by immersing the object into a cleaning liquid within a processing tank. The cleaning method includes the steps of: detecting the temperature of the cleaning liquid in which the object to be processed is immersed or to be immersed, and generating a corresponding temperature signal; determining an immersion time for the immersion of the object in the cleaning liquid, based on the temperature signal; and immersing the object to be processed in the cleaning liquid, for the immersion time.

Cleaning method

A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.

An ultrasonic cleaning apparatus has an intermediate tank having a space divided into a liquid storing region (2a) and a liquid recovering region (2b) by a partition plate (5). An ultrasonic unit (3) is disposed in the bottom of the liquid storing region (2a). A vibration propagating liquid, such as pure water, is contained in the liquid storing region (2a) and a lower part of a cleaning tank (1) is immersed in the vibration propagating liquid stored in the liquid storing region (2a). The partition plate (5) is provided in its upper edge (5c) with a plurality of V-shaped notches (9). A nozzle pipe (4) provided with a plurality of nozzle holes (4a) is disposed in a side of the liquid storing region (2a) opposite a side in which the partition plate (5) is disposed. Pure water jetted by the nozzle pipe (4) toward the outer surface (1a) of the bottom wall of the cleaning tank (1) flows along the outer surface (1a) and overflows the partition plate (5) into the liquid recovering region (2b).

A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.

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Koshi, Japan

Shigenori Kitahara