Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Interuniversitair Micro-elektronica Centrum Vzw

Imec

Shigenori Hayashi

Takeshi Kamada

Takashi Hirao

Hideo Torii

Ryoichi Takayama

Masafumi Kubota

Kazuhiko Yamamoto

Riichiro Mitsuhashi

Hideo Nakagawa

Yuichiro Sasaki

Masatoshi Kitagawa

Masaaki Niwa

Kazuki Komaki

Masumi Hattori

Takashi Deguchi

Yoshinao Harada

Eiji Fujii

Tomohiro Okumura

Ichiro Nakayama

Hidetaka Higashino

Kentaro Setsune

Akira Enokihara

Kiyotaka Wasa

Kenji Harafuji

Michinari Yamanaka

Shigemi Kohiki

Shinichiro Hatta

After a fin-semiconductor region () is formed on a substrate (), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (). This forms impurity-doped region () in at least side portions of the fin-semiconductor region ().

Method for fabricating semiconductor device and plasma doping apparatus

Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses.

Plasma doping method

In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same

A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.

Insulating buffer film and high dielectric constant semiconductor device and method for fabricating the same

A metal film is deposited on a silicon region in a non-oxidizing atmosphere, after which the metal film is oxidized with radicals capable of oxidizing the metal film, such as oxygen radicals, to form a metal oxide film serving as a gate insulating film.

Method for fabricating semiconductor device

A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.

Semiconductor device and method for fabricating the same

The present invention provides a method of depositing a metal film on a substrate in a non-oxidizing atmosphere and then forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere.

Semiconductor device manufacturing method

An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250&#xb0; C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching.

Wet-etching method and method for manufacturing semiconductor device

A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.

Method of manufacturing a thin film sensor element

On the bottom of a chamber, there is provided a lower electrode for supporting an object to be processed with intervention of an insulator. A first RF power source applies RF power to a multiple spiral coil composed of four spiral coil elements connected in parallel via an impedance matcher. The length of each of the coil elements corresponds to 1/4 of the wavelength of the RF power supplied from the first RF power source. A second RF power source applies an RF bias voltage to the lower electrode.

Apparatus and method for applying RF power apparatus and method for

A reactive gas supplied to a chamber 1 is put into plasma by supplying radio frequency power to the chamber 1 intermittently or while repeating high and low levels alternately and a specimen A in the chamber 1 is treated by the plasma. A positive pulse-like bias voltage synchronized with a period in which the radio frequency power is not supplied or a period in which low-level power is supplied is applied to the specimen A for preventing charging.

Plasma treatment method and plasma treatment system

A plasma generator operable in the UHF and VHF bands is adaptable to process substrates having different sizes and shapes. The device includes a plurality of electrodes, a power supply for providing a high frequency signal to at least one of the electrodes, and antennas attached to the plurality of electrodes. Antennas on one electrode are arranged substantially parallel and alternately to antennas attached to another adjacent electrode.

Growing community of inventors

Nara, Japan

Shigenori Hayashi