Disco Corporation

Shigenori Harada

Yoshiaki Yodo

Yusuke Vincent Fujii

Hayato Kiuchi

Minoru Matsuzawa

Masamitsu Agari

Makiko Ohmae

Taro Arakawa

Emiko Kawamura

Toshiki Miyai

Takashi Okamura

Jinyan Zhao

Kazuma Sekiya

Koji Watanabe

Hideki Matsui

Youngsuk Kim

Takaaki Inoue

Takafumi Omori

Motoki Ishikawa

Mana Eritate

Tomoharu Takita

There is provided a processing method of a wafer for processing the wafer that includes, on a front surface side, a device region in which a device is formed in each of plural regions marked out by plural planned dividing lines and includes a recess part on the back surface side and includes an annular reinforcing part at a peripheral part. The processing method of a wafer includes a holding step of holding the bottom surface of the recess part, a cutting step of cutting the wafer along the planned dividing lines by a cutting blade to divide the device region into plural device chips and form grooves on the front surface side of the reinforcing part, and a dividing step of dividing the reinforcing part along the planned dividing lines with the grooves being the points of origin by giving an external force to the reinforcing part.

Processing method of wafer

A wafer processing method includes an affixing step of affixing a wafer to a sheet via a die attach layer having a diameter larger than a diameter of the wafer, to thereby form a protruding portion of the die attach layer on a periphery of the wafer, and a protruding portion removing step of removing the protruding portion from the sheet by bringing a removing member into contact with the protruding portion.

Wafer processing method

Provided is a cutting method of cutting a workpiece by using a cutting apparatus including a chuck table configured to hold the workpiece and a cutting unit having a cutting blade configured to cut the workpiece held by the chuck table and an ultrasonic vibrator configured to ultrasonically vibrate the cutting blade in a radial direction of the cutting blade. The cutting method includes a holding step of holding the workpiece by the chuck table, and a cutting step of performing ultrasonic cutting that cuts the workpiece by the cutting blade vibrated ultrasonically and normal cutting that cuts the workpiece by the cutting blade not vibrated ultrasonically on the same cutting line of a plurality of cutting lines set on the workpiece.

Cutting method

Edge trimming is performed on a wafer while a cleaning liquid is supplied to the center of a face side of the wafer and the wafer is rotated to form a film of the cleaning liquid that covers the face side of the wafer. The film of the cleaning liquid prevents the face side of the wafer from being dried, lowering the probability that swarf will be introduced into devices on the face side of the wafer. In addition, the consumption of the cleaning liquid can be reduced compared with a step of performing edge trimming on the wafer while supplying a curtain of cleaning liquid to the entire face side of the wafer.

Method of processing a wafer

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyolefin sheet, pushing up each device chip through the polyolefin sheet, and picking up each device chip from the polyolefin sheet.

Wafer processing method including uniting wafer, ring frame, and polyolefin sheet without using an adhesive layer

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of picking up each device chip from the polyolefin sheet.

Wafer processing method including uniting wafer, ring frame and polyolefin sheet without using an adhesive layer

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyolefin sheet, pushing up each device chip through the polyolefin sheet, and picking up each device chip from the polyolefin sheet.

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyolefin sheet, pushing up each device chip through the polyolefin sheet, and picking up each device chip from the polyolefin sheet.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.

Wafer processing method including uniting wafer, ring frame and polyester sheet without using an adhesive layer

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of blowing air to each device chip from the polyolefin sheet side to push up each device chip through the polyolefin sheet and picking up each device chip from the polyolefin sheet.

Wafer processing method including applying a polyolefin sheet to a wafer

A processing apparatus includes a cutting blade mounted on a spindle, the cutting blade having a cutting edge for cutting a workpiece held on a holding table, a measuring portion for measuring an edge projection amount of the cutting edge at a predetermined frequency, and a data processing portion. The data processing portion includes a lower limit recording portion for recording a lower limit of the edge projection amount of the cutting edge as an allowable limit for use of the cutting blade, a storing portion for storing blade information including the edge projection amount measured by the measuring portion and a cutting distance traveled by the cutting blade at the time of measurement of the edge projection amount.

Processing apparatus

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of blowing air to each device chip from the polyester sheet side to push up each device chip through the polyester sheet and picking up each device chip from the polyester sheet.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyester sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyester sheet, then picking up each device chip from the polyester sheet.

Wafer processing method including uniting a wafer, a ring frame and a polyester sheet without using an adhesive layer

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyolefin sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyolefin sheet, then picking up each device chip from the polyolefin sheet.

Growing community of inventors

Tokyo, Japan

Shigenori Harada