Napra Co., Ltd.

Sanei Kasei Co., Ltd.

Komeya, Inc.

Kawasaki Teitoku Co., Ltd.

Sawasaki Teitoku Co., Ltd.

Shigenobu Sekine

Yurina Sekine

Yoshiharu Kuwana

Hiroji Sato

Ryuji Kimura

Hiroaki Ikeda

Kazutoshi Kamibayashi

Minoru Narita

Chihiro Shimaya

Kazushi Suzuki

Kenji Sakaguchi

Yuko Kawasaki

Koichi Tono

Yoshiki Kuwabara

Keiji Okada

Mitsuhisa Hirata

According to this invention, provided is a terminal having a plating layer formed on a surface of a base, the plating layer having a structure in which an intermetallic compound crystal that contains Sn, Cu, Cr and Ni, is dispersed in a parent phase that contains Sn and an Sn—Cu alloy.

Terminal

According to this invention, provided is a metal particle that includes an intermetallic compound composed of Sn, Cu and Ni, in a basal phase that contains Sn and an Sn&#x2014;Cu alloy, and at least parts of the Sn&#x2014;Cu alloy and the intermetallic compound in the basal phase form an endotaxial joint.

Metal particle

Disclosed is a bonding structure that includes an intermetallic compound crystal composed of Sn and Cu, and, an Sn alloy matrix composed of Sn and Cu, being intended for bonding a metal body or an alloy body, the intermetallic compound crystal forming an endotaxial junction with the Sn alloy matrix, and the Sn alloy matrix and/or the intermetallic compound crystal forming an epitaxial junction with the metal body or the alloy body.

Bonding structure

A metal particle for joint material includes an intermetallic compound crystal that contains Sn, Cu, Ni and Ge, in a basal phase that contains Sn and an Sn&#x2014;Cu alloy, the metal particle having a chemical composition represented by 0.7 to 15% by mass of Cu, 0.1 to 5% by mass of Ni, 0.001 to 0.1% by mass of Ge and the balance of Sn, the basal phase having a chemical composition represented by 95 to 99.9% by mass of Sn, 5% by mass or less of Cu and 0.1% by mass or less of an inevitable impurity, the intermetallic compound crystal residing in the basal phase so as to be included therein, the metal particle having a particle size of 1 &#x3bc;m to 50 &#x3bc;m, the metal particle containing an orthorhombic crystal structure, and at least parts of the basal phase and the intermetallic compound crystal forming an endotaxial joint.

Disclosed is a joint structure that includes a basal phase that contains Sn and an Sn&#x2014;Cu alloy, and an intermetallic compound that is composed of Sn, Cu and Ni, and is contained in the basal phase; the Sn&#x2014;Cu alloy and the intermetallic compound form an endotaxial joint; area ratio of the endotaxial joint, when assuming the total area of joint face between the Sn&#x2014;Cu alloy and the intermetallic compound as 100%, is 30% or larger; and the joint structure contains 0.7 to 40% by mass of Cu, 0.1 to 5% by mass of Ni, and the balance of Sn.

Joint structure

Disclosed is a preform for semiconductor encapsulation, mainly containing a metal or alloy, the metal or alloy further containing Sn or Sn alloy, and, Cu or Cu alloy, and still further containing at least 2% by weight of an intermetallic compound of Cu and Sn.

Preform for semiconductor encapsulation

A formed article includes a metal particle which has a particle size in a range from 1 &#x3bc;m to 20 &#x3bc;m and consists of an outer shell and a core part. The core part contains Sn or a Sn alloy. The outer shell contains an intermetallic compound of Sn and Cu and covers 50% or more of a total surface area of the core part.

Metal particle and articles formed therefrom

An electro-conductive paste includes a metal particle and a vehicle in which the metal particle is dispersed. The metal particle has a particle size in a range from 1 &#x3bc;m to 20 &#x3bc;m and consists of an outer shell and a core part. The core part contains Sn or a Sn alloy. The outer shell contains an intermetallic compound of Sn and Cu and covers 50% or more of a total surface area of the core part.

Metal particle and electroconductive paste formed therefrom

Disclosed is a semiconductor device that includes a semiconductor chip; bonding pads provided to the semiconductor chip; a plurality of lead terminals arranged around the semiconductor chip; a plurality of bonding wires that electrically connect the semiconductor chip with the plurality of lead terminals; and a resin encapsulant which encapsulates the semiconductor chip and the bonding wires, the semiconductor device further having an insulating material interposed at the interface between the bonding wires and the resin encapsulant, and the insulating material containing a nanometer-sized insulating particle and amorphous silica.

Semiconductor device and method for manufacturing the same

Aiming at providing a metal particle, an electro-conductive paste, a formed article, and a laminated article that are able to form a highly reliable and high-quality electric interconnect, an electro-conductive bonding portion, or a three-dimensional structure that is less likely to produce the Kirkendall void, this invention discloses a metal particle which include an outer shell and a core part, the outer shell including an intermetallic compound and covering the core part.

Metal particles having intermetallic compound nano-composite structure crystal

A method for forming a functional part in a minute space includes the steps of: filling a minute space with a dispersion functional material in which a thermally-meltable functional powder is dispersed in a liquid dispersion medium; evaporating the liquid dispersion medium present in the minute space; and heating the functional powder and hardening it under pressure.

Method for forming functional part in minute space

A multi-layer preform sheet having at least a first layer and a second layer, the first layer being composed of a solder material that contains an intermetallic compound, and the second layer containing a first metal having a melting point of 300&#xb0; C. or above, and a second metal capable of forming an intermetallic compound with the first metal.

Multi-layer preform sheet

Aiming at providing a three-dimensional laminated circuit board which can be confirmed, in an easy and exact manner, to be an authentic product having been manufactured and packaged honestly; and at providing an electronic device, an information processing system, and an information network system using the same, disclosed is a three-dimensional laminated circuit board that includes a substrate, interconnects, and an authentication pattern; the interconnects being provided in the thickness direction of the substrate; wherein the authentication pattern is provided on the substrate, and is characterized by material, shape, layout, structure or size discriminable from those of the interconnects and the substrate.

Three-dimensional laminated circuit board, electronic device, information processing system, and information network system

Disclosed is a semiconductor device that is configured to contain a sealing layer for sealing a semiconductor element supported on a base, the sealing layer being configured to have a nanocomposite structure that comprises a large number of nanometer-sized (1 &#x3bc;m or smaller) insulating nanoparticles composed of SiO, and an amorphous silica matrix that fills up the space around the insulating nanoparticles without voids and gaps.

Semiconductor device

A substrate with built-in passive element includes passive elements and a substrate. The passive elements include at least one of a capacitor, an inductor, a resistor, a signal transmission element or an optical waveguide element. The capacitor, the inductor, the resistor, the signal transmission element or the optical waveguide element has a functional element filled in a groove-like or hole-like element forming region provided in the substrate along a thickness direction thereof. The functional element has a Si&#x2014;O bond region obtained by reacting Si particles with an organic Si compound.

Growing community of inventors

Tokyo, Japan

Shigenobu Sekine