Matsushita Electric Industrial Co., Ltd.

Agency of Industrial Science and Technology

Director-general of the Agency of Industrial Science and Technology

Shigenobu Akiyama

Koichi Kugimiya

Yasuhiro Tomita

Genshu Fuse

Yasuaki Terui

Yoshiyuki Takagi

Kenichi Yamazaki

Shin-ichi Ogawa

Disclosed is a three-dimensionally stacked LSI having a plurality of integrated-circuit layers stacked together, each of which is equipped with a plurality of circuit elements. Each of the circuit elements are equipped a power terminal of its own, which is connected through interlayer via-hole wiring to the power wiring of the uppermost integrated-circuit layer. The power wiring of the uppermost integrated-circuit layer is formed of a metal exhibiting a low electrical resistance, for example, Al, whereas the metal wirings of the other layers, which are exposed to high temperatures when forming the upper layers, are formed of W.

Three-dimensional stacked LSI

A method of obtaining a multilayer semiconductor device by forming a semiconductor crystallized layer through an insulative material over a semiconductor substrate in which a semiconductor device is formed. The insulative material is formed on the semiconductor substrate in which the semiconductor device is fabricated and a first semiconductor layer is formed on the insulative material. Thereafter, the surface of the first semiconductor layer is planarized and an insulative material is formed on this planarized surface, then a second semiconductor layer is formed on this insulative material. Next, the second semiconductor layer is crystallized by the irradiation of an energy beam, thereby fabricating a device in the second crystallized semiconductor layer.

Method of manufacturing a multilayer semiconductor device

A method of producing a superior semiconductor crystallized layer rapidly on a semiconductor substrate with the surface thereof covered with an insulating film is disclosed. An opening, desirably formed by at least two insulating films, is formed at an intersection of scribe lines of the semiconductor substrate. A polycrystal semiconductor film is formed on the insulating films and the opening, after which an energy beam is irradiated spirally on the polycrystal semiconductor film in such a manner that the beam passes at least one opening during each rotation thereof thereby to transform the polycrystal semiconductor film into a crystallized layer for forming a semiconductor element.

Method of fabricating a multi-layer type semiconductor device including

Growing community of inventors

Hirakata, Japan

Shigenobu Akiyama