Matsushita Electric Industrial Co., Ltd.

Shigemi Kohiki

Mikihiko Nishitani

Takahiro Wada

Takayuki Negami

Hidetaka Higashino

Kentaro Setsune

Akira Enokihara

Kiyotaka Wasa

Shinichiro Hatta

Hideaki Adachi

Takeshi Kamada

Shigenori Hayashi

Koichi Mizuno

Tomoaki Matsushima

Chalcopyrite compound semiconductor thin films represented by I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2-x VII.sub.x, and semiconductor devices having a I-III-VI.sub.2 /I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2 /I-III-VI.sub.2-x VII.sub.x chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI.sub.2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.

Compound semiconductor, a method for producing a thin film thereof, and

A solar cell device includes an absorber layer or heterojunction-forming layer which comprises a I-III-VI.sub.2 chalcopyrite semiconductor film containing a Group VIIA element as a dopant. The semiconductor film can be made by depositing a I-III-VI.sub.2 chalcopyrite compound film onto a substrate while evaporating onto the substrate a Group VIIA element to obtain a I-III-VI.sub.2 chalcopyrite compound film containing a Group VIIA element therein as a dopant.

Solar cell having chalcopyrite semiconductor film

Method for producing a thin film, and a semiconductor device having the

A I-III-VI.sub.2 chalcopyrite semiconductor film containing a Group VII element as a dopant, and methods to produce such a chalcopyrite film are provided. The chalcopyrite film of the present invention has stoichiometric composition, and electrical characteristics such as p-n conduction type, carrier concentration and the like are controlled.

Process of making chalcopyrite structure semiconductor film

A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.

Method for manufacturing thin film oxide superconductors and

A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.

Josephson devices and process for manufacturing the same

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Osaka, Japan

Shigemi Kohiki