Az Electronic Materials (luxembourg) S.a.r.l.

Merck Patent Gmbh

Az Electronic Materials USA Corp.

Shigemasa Nakasugi

Hiroshi Yanagita

Takashi Sekito

Yusuke Hama

Yuriko Matsuura

Go Noya

Masato Suzuki

Munirathna Padmanaban

Kazuma Yamamoto

Shinji Miyazaki

Srinivasan Chakrapani

Alberto D Dioses

Tomohide Katayama

Takafumi Kinuta

Yasushi Akiyama

Motoki Misumi

Hiroshi Hitokawa

Masahiro Ishii

Jin Li

Katsuyuki Sakamoto

Yasuaki Ide

Kazunori Kurosawa

Taku Hirayama

D Alberto Dioses

To provide a method for manufacturing a cured film having high film density, high film hardness and high etching resistance. A method for manufacturing a cured film comprising (1) applying a composition (i) above a substrate; (2) forming a hydro-carbon-containing film from the composition (i); and (3) irradiating the hydrocarbon-containing film with plasma, electron beam and/or ion to form a cured film. Use of the cured film.

Method for manufacturing cured film and use of the same

[Problem to be Solved] An object is to provide a compound with good heat resistance. And another object is to provide a coating made exhibits less film shrinkage, good gap filling property and good planarization. [Solution] The present invention provides an ethynyl derived composite and a composition comprising thereof. And the present invention provides a method for manufacturing a coating by it, and a method for manufacturing a device.

Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating

An object is to provide a semiconductor material and coating having high solubility in solvents and having advantageous filling property, high heat resistance, and/or high etching resistance. Another object is to provide a method for manufacturing a semiconductor using the semiconductor material. Still another object is to provide a novel compound. Provided are: a semiconductor material consisting of a specific aromatic hydrocarbon ring derivative; methods for manufacturing a coating and a semiconductor using the semiconductor material; and a compound consisting of a specific aromatic hydrocarbon ring derivative.

Compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same

The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.

Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same

[Problem] To provide a composition for an underlayer, which can form an underlayer having flattened surface. [Means for Solution] A composition for forming an underlayer, comprising a polymer having a repeating unit containing nitrogen and a solvent. An underlayer is formed by coating this composition on a substrate, preferably baking in an inert atmosphere, and then baking in the air containing oxygen.

Composition for forming underlayer and method for forming underlayer therewith

To provide a composition for gap formation capable of forming sacrifice areas made of a sacrificial material decomposable completely into vapor at a desired temperature, and also to provide a semiconductor device-manufacturing method using the composition. Disclosed is a composition for gap formation comprising a polymer and a solvent: wherein said polymer comprising five or more of repeating units which are represented by at least one kind of the following formula (1) or (2):Ar-L&#x2003;&#x2003;()Ar-L-Ar&#x2003;&#x2003;()[each of Ar, Arand Aris independently a substituted or unsubstituted aromatic group; and each of Land Lis independently oxygen, sulfur, alkyl, sulfone, amide, ketone or a group represented by the following formula (3): {Aris an aromatic group; and Lis a trivalent atom selected from the group consisting of nitrogen, boron and phosphorus}].

Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition

[Problem] To provide a dispersion containing surface-modified silica nanoparticles highly dispersed in an organic dispersion medium and also having high transparency and storage stability. [Solution] Disclosed is a method for producing surface-modified silica nanoparticles comprising: preparing a first silica nanoparticle dispersion containing silica nanoparticles and an aqueous dispersion medium; replacing the aqueous dispersion medium in the first silica nanoparticle dispersion with an organic dispersion medium comprising at least one selected from cyclic esters or cyclic amides, to obtain a second silica nanoparticle dispersion; and mixing the second silica nanoparticle dispersion with a silane coupling agent represented by the formula (1): 

Method for producing surface-modified silica nanoparticles, and surface-modified silica nanoparticles

The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.

Composition for forming fine resist pattern and pattern formation method using same

The present invention provides a dendrimer compound capable of improving critical dimension uniformity and DOF (depth of focus) margin, and also provides a composition capable of forming an underlayer film. The dendrimer compound comprises a branched chain having a central aromatic skeleton and amide or ester bond, and is contained in the composition for forming an underlayer film.

Composition for forming resist underlayer

The present invention provides a cross-linking agent capable of preventing formation of scum from a bottom anti-reflective coating, and also provides a composition for forming a bottom anti-reflection coating containing the agent. The cross-linking agent is a nitrogen-containing aromatic compound having at least one vinyloxy group or N-methoxymethylamide group, and the composition contains the cross-linking agent. The cross-linking agent of the formula (1) can be produced by reaction of a nitrogen-containing aromatic compound, a halogen compound having a vinyloxy group or N-methoxymethylamide group and a basic compound.

Developable bottom anti-reflective coating

The present invention provides a composition for forming a bottom anti-reflective coating, and also provides a photoresist pattern formation method employing that composition. The composition gives a bottom anti-reflective coating used in a lithographic process for manufacturing semiconductor devices, and the coating can be developed with a developing solution for photoresist. The composition contains a solvent, a polymer having a condensed polycyclic aromatic group, and a compound having a maleimide derivative or a maleic anhydride derivative. The composition may further contain a photo acid generator or a crosslinking agent.

Growing community of inventors

Kakegawa, Japan

Shigemasa Nakasugi