Fujitsu Semiconductor Limited

Shigeki Yoshida

Fumio Ushida

Makoto Kawano

A method of manufacturing a semiconductor device includes: forming a recessed portion in a semiconductor substrate; forming an insulating film in the recessed portion; after forming the insulating film, forming a silicide layer on the semiconductor substrate in contact with the insulating film; and performing alignment between an electron beam exposure apparatus and the semiconductor substrate by using the insulating film and the silicide layer as an alignment mark.

Method of manufacturing a semiconductor device including alignment mark

A semiconductor device includes an alignment mark formed over a semiconductor substrate and an inhibition pattern arranged over the alignment mark with a pattern edge of the inhibition pattern located in a mark functional region of the alignment mark in order to inhibit the alignment mark being recognized as such by an image detector of an exposure device.

Growing community of inventors

Ichinomiya, Japan

Shigeki Yoshida