Nippon Gakki Seizo Kabushiki Kaisha

Shigeki Yamamoto

Yasuji Uchiyama

A sequential-access memory of an auto-refreshing type has an increased storage capacity. The sequential-access memory has at least two dynamic-type memory cell arrays serially connected to one another to form a loop. Each array comprises N rows by M columns of memory cells each having a read selection line and a write selection line. The read selection line of each memory cell of each row is connected to the write selection line of the memory cell of the same row which comes next to the each memory cell to form an address selection line. The address selection lines of each memory cell array are activated one after another to effect a sequential access to the memory cell array. Data read form each memory cell array is fed through a delay circuit to the memory cell array which comes next to the each memory cell array. A logic circuit for subjecting data outputted from one memory array may be additionally provided to feed data representative of the result of the predetermined operation to the next memory array.

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Hamamatsu, Japan

Shigeki Yamamoto