Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Shigeki Uno

Hideaki Hiraki

Tadashi Sakai

Mituo Harata

Masaki Katsura

Kazuo Sakuma

Tatsuo Saishu

Kazuki Taira

Kazuyoshi Furukawa

Isao Amemiya

Masao Koyama

Ryoji Tsuda

Masaru Shimbo

Masayuki Shiratori

Nanao Nakamura

Kohei Suzuki

Kiyosi Matsunaga

A color shutter, comprising first, second and third polarizers, first and second retarders, first and second polarizing rotators, and at least one absorption type partial polarizer. The color shutter is constructed such that the first retarder is arranged between the first polarizer and the second polarizer, that the second retarder is arranged between the second polarizer and the third polarizer, that the first polarizing rotator is arranged between the first polarizer and the second polarizer, that the second polarizing rotator is arranged between the second polarizer and the third polarizer, at least one of the first polarizing rotator and the second polarizing rotator is arranged in a manner to be sandwiched between the second polarizer and the first or second retarder, that the absorption type partial polarizer is arranged between the first polarizing rotator and the first retarder and/or between the second polarizing rotator and the second retarder, and that the transmitted light can be changed into the three primary colors of RGB by selecting the voltage applied to the first and second polarizing rotators.

Color shutter and color image display apparatus

Disclosed is a sensor device for detecting a specified chemical component of a solution. The sensor device includes an electrode for generating a potential corresponding to a concentration of a specified component of a solution, a reference electrode including a insulated-gate FET having a film insensitive to the component of the solution formed on the gate region, and an electrode for detecting a potential difference between the potential generating electrode and the reference electrode. The insensitive film included in the reference electrode contains a siloxane copolymer.

Solution component sensor device

A field-effect transistor-type semiconductor sensor is provided which comprises first and second semiconductor substrates bonded strongly to each other interposing a silicon oxide film therebetween by the use of a direct-bonding technique. The first semiconductor substrate is formed into an island-shape, and incorporates a source region, a drain region and a gate region. The island-shaped substrate constitutes an ion-sensitive portion, and is immersed in a solution when in use. The second semiconductor substrate has openings in which source and drain electrodes are formed.

Field-effect transistor-type semiconductor sensor

In a semiconductor sensor, the surfaces of first and second semiconductor substractes of a first conductivity type are made into flat surfaces by polishing the surfaces and are contacted each other so that the both substrates are bonded together. Source and claim regions are formed by diffusing an impurity of second conductivity type. The source and claim regions are separated through a through hole formed in the second substrate and are extended along the surface of the second substrate. An insulative layer is formed on the opposite surface of the second substrate and an inner surface of the through hole.

Field effect transistor type semiconductor sensor and method of

A humidity-sensitive element comprises a humidity-sensitive body which includes 21-73 mol % of Cr.sub.2 O.sub.3, 25-55 mol % of at least one member selected from the group consisting of ZnO and MgO, 0.5-8.0 mol % of CuO, 0.5-8.0 mol % of Li.sub.2 O, and 0.5-8.0 mol % of V.sub.2 O.sub.5, and a pair of electrodes attached to the body. Such an element provides excellent stability over a wide range of humidity and temperature levels.

Humidity-sensitive resistive element

A humidity-sensitive element which has excellent humidity-sensitive characteristics and has a small drift after being exposed to a high humidity for a long period of time. The humidity-sensitive element of the invention includes a porous metal oxide sintered body, a simple substance or an oxide of phosphorus or sulfur carried on the porous metal oxide sintered body, and copper ions carried on the porous metal oxide sintered body.

Humidity-sensitive element and process for producing the same

A moisture sensitive element for detecting humidity variations through sensing variations in electric resistance using a porous metal oxide ceramic. At least either phorphorus or sulfur is incorporated in and supported by the porous metal oxide ceramic with the phosphorus or sulfur being applied in either a pure or oxide form.

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Tokyo, Japan

Shigeki Uno