Nec Compound Semiconductor Devices, Ltd.

Shigeki Tsubaki

Toshimichi Kurihara

Tetsu Toda

Takahiro Kawabata

In a semiconductor device having a semiconductor substrate, an internal electrode layer is formed on the semiconductor substrate. A barrier metal layer is formed on the internal electrode. An external electrode layer is formed on the barrier metal layer. A pad electrode is made of the internal electrode layer, the barrier metal layer, and the external electrode layer. A wire is electrically connected to the pad electrode. An area of the external electrode layer is set midway between an area of a polymerization portion of the wire on the pad electrode and a planar area of the barrier metal layer.

Semiconductor device having pad electrode connected to wire

The present invention provides a bonding structure between a bonding pad and a bonding portion of a bonding wire made of an Au-base material, wherein said bonding pad further comprises: a base layer; at least a barrier layer overlying said base layer; and a bonding layer overlying said at least barrier layer, said bonding layer including an Al-base material, and wherein said bonding portion of said bonding wire is buried in said bonding layer, and an Au&mdash;Al alloy layer extends on an interface between said bonding portion and said bonding layer, and a bottom of said Au&mdash;Al alloy layer is in contact with or adjacent to an upper surface of said barrier layer.

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Ohtsu, Japan

Shigeki Tsubaki