Intel Corporation

Micron Technology Incorporated

Tahoe Research, Ltd.

Shigeki Tomishima

Shih-Lien L Lu

Wei Wu

Chetan Chauhan

Rajesh Sundaram

Kuljit Singh Bains

Srikanth T Srinivasan

Charles Augustine

James W Tschanz

Helia A Naeimi

Jawad Basit Khan

James A McCall

Chong J Zhao

George Vergis

Andrew Ling

Nilesh N Shah

Nahid Hassan

Charles L Ingalls

Tae Hyoung Kim

Howard Kirsch

Bruce Querbach

Georgios Panagopoulos

K Shawn Smith

Robert S Chau

Ian A Young

Dmitri E Nikonov

Kemal Aygun

Saikumar Jayaraman

Zhiguo Qian

Richard L Coulson

Sriram R Vangal

Andrew Paul Collins

Jianyong Xie

Dimitrios Ziakas

Anna Trikalinou

Daniel S Lake

Berkin Akin

Prasad Ramanathan

Yí Li

Hector Amador

Shih Lien L Lu

Elijah V Ilya Karpov

Shih-Lien L Liu

A stack of memory chips and a logic chip is placed within a same package. Multiple memory chips of the stack of memory chips are divided into fractions, and multiple internal channels within the package that emanate from the logic chip are coupled to respective ones of the fractions. The logic chip has a multiplexer, including a multiplexer to multiplex a single input/output (I/O) channel of the package to the multiple internal channels.

Stacked memory chip solution with reduced package inputs/outputs (I/Os)

An example two transistor (2T) gain cell memory with indium-gallium-zinc-oxide (IGZO) transistors. Examples include IGZO transistors included in a dynamic random access memory (DRAM) cell. The IGZO transistors included in the DRAM cell are described as being formed or created in a back end (BE) metal process stack of an integrated circuit chip or die.

Two transistor gain cell memory with indium gallium zinc oxide

Examples herein relate to a solid state drive that includes a media, first circuitry, and second circuitry. In some examples, the first circuitry is to execute one or more commands. In some examples, the second circuitry is to receive a configuration of at one type of command, where the configuration is to define an amount of media bandwidth allocated for the at one type of command; receive a command; and assign the received command to the first circuitry for execution.

Data processing near data storage

Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.

Techniques to couple high bandwidth memory device on silicon substrate and package substrate

Technologies for preserving error correction capability in compute-in-memory operations in a memory include memory media and a media access circuitry coupled with the memory media. The media access circuitry is to detect an error code adjustment state indicative of a failure in the initiated error correction. The media access circuitry is to adjust a voltage to the memory media to eliminate the error code correction adjustment state. Once eliminated, the media access circuitry is to perform the error correction on the read data.

Technologies for preserving error correction capability in compute-in-memory operations

Technologies for performing in-memory macro operations include a memory having a media access circuitry connected to a memory media. The media access circuitry is to receive a request to perform an in-memory macro operation indicative of a set of multiple in-memory operations. The media access circuitry is also to perform, in response to the request, the in-memory macro operation on data present in the memory media.

Technologies for performing macro operations in memory

Embodiments include electronic packages and methods of forming such packages. An electronic package includes a memory module comprising a first memory die. The first memory die includes first interconnects with a first pad pitch and second interconnects with a second pad pitch, where the second pad pitch is less than the first pad pitch. The memory module also includes a redistribution layer below the first memory die, and a second memory die below the redistribution layer, where the second memory die has first interconnects with a first pad pitch and second interconnects with a second pad pitch. The memory module further includes a mold encapsulating the second memory die, where through mold interconnects (TMIs) provide an electrical connection from the redistribution layer to mold layer. The TMIs may be through mold vias. The TMIs may be made through a passive interposer that is encapsulated in the mold.

Architecture and processes to enable high capacity memory packages through memory die stacking

Technologies for providing multiple tier memory media management include a memory having a media access circuitry connected to a memory media. The media access circuitry is to receive a request to perform an in-memory compute operation. Additionally, the media access circuitry is to read, in response to the request, data from a memory media region of the memory media, write the read data into a compute media region of the memory, perform, on the data in the compute media region, the in-memory compute operation, write, to the memory media region, resultant data indicative of a result of performance of the in-memory compute operation.

Technologies for providing multiple tier memory media management

Examples herein relate to a solid state drive that includes a media, a processing system, and a media command arbiter configured to permit execution of a specific allocation of storage and compute commands based on a configuration, wherein the media command arbiter is to transfer commands to the media based on the configuration. The media can be locally connected to a compute engine processing system that is configurable to perform computations on data stored in the media. The configuration can indicate a number of compute commands and storage commands that are permitted to be performed over a period of time or media bandwidth allocated to compute commands and storage commands. The processing system can include an inference engine that performs one or more of: data pattern recognition, image recognition, augmented reality overlay applications, face recognition, object recognition, or voice recognition, language translation.

Technologies for provisioning error-corrected data for use in in-memory compute operations include a memory that includes a memory media having multiple memory partitions and media access circuitry coupled to the memory media. The media access circuitry is to receive a request to perform an in-memory compute operation on data from the memory media. The request specifies a memory partition of the memory media in which the data is located. The media access circuitry reads the data from the memory partition. The media access circuitry performs error correction on the read data to produce error-corrected read data and stores the error-corrected read data in a temporary buffer for access by one or more in-memory compute operations, in addition to the requested in-memory compute operation.

Technologies for providing ECC pre-provisioning and handling for cross-point memory and compute operations

Technologies for providing adaptive memory media management include media access circuitry connected to a memory media. The media access circuitry is to receive a request to perform at least one memory access operation to be managed by the media access circuitry. The media access circuitry is further to manage the requested at least one memory access operation, including disabling a memory controller in communication with the media access circuitry from managing the memory media while the at least one requested memory access operation is performed.

Technologies for providing adaptive memory media management

Growing community of inventors

Portland, OR, United States of America

Shigeki Tomishima