Denso Corporation

Nippon Soken, Inc.

Nippondenso Co., Ltd.

Denso Corpora Tion

Ipics Corporation

Shigeki Takahashi

Norihito Tokura

Satoshi Shiraki

Takashi Nakano

Youichi Ashida

Yoshiyuki Hattori

Tsuyoshi Yamamoto

Mitsuhiro Kataoka

Youichirou Suzuki

Masakiyo Sumitomo

Noboru Maeda

Nozomu Akagi

Makoto Kuwahara

Takahisa Koyasu

Akira Yamada

Kazuyoshi Nagase

Kyoko Okada

Akio Nakagawa

Koji Kondo

Shoji Mizuno

Takaaki Aoki

Takashi Suzuki

Tetsuo Fujii

Hiroaki Himi

Yasushi Higuchi

Yoshihiko Ozeki

Hirofumi Abe

Yoshinori Arashima

Koichi Murakawa

Weitao Cheng

Tomohisa Kishigami

Hiroyuki Ban

Kunihiko Hara

Masahiro Yamamoto

Yoshifumi Okabe

Yutaka Fukuda

Takeshi Sakai

Takanori Teshima

Naohiko Hirano

Yuuichi Takeuchi

Yoshiaki Nakayama

Shinichi Hoshi

Hideo Matsuki

Tomofusa Shiga

Youngshin Eum

Takafumi Arakawa

Masanori Miyata

Atsushi Kasahara

Masatoshi Kato

Shinya Sakurai

Hiroyasu Kudo

Kazunori Kawamoto

Kensuke Hata

Kouji Senda

Hiroshi Kameoka

Osamu Seya

Yuuchi Takeuchi

In a semiconductor device in which an IGBT region having an IGBT element and an FWD region having an FWD element are formed to a semiconductor substrate, a plurality of carrier injection layers electrically connected with a second electrode and configuring a PN junction with a field stop layer is disposed in a cathode layer. When an impurity concentration of the field stop layer is defined as Nfs [cm], and a length of a shortest portion of each of the plurality of carrier injection layers along a planar direction of the semiconductor substrate is defined as L[&#x3bc;m], the plurality of carrier injection layers satisfies a relationship of L&#x3e;6.8&#xd7;10&#xd7;Nfs+20.

Semiconductor device including carrier injection layers

In a semiconductor device having an active region and an inactive region, the active region includes a channel forming layer with a heterojunction structure having first and second semiconductor layers, a gate structure portion having a MOS gate electrode, a source electrode and a drain electrode disposed on the second semiconductor layer with the gate structure portion interposed therebetween, a third semiconductor layer disposed at a position away from the drain electrode between the gate structure portion and the drain electrode and not doped with an impurity, a p-type fourth semiconductor layer disposed on the third semiconductor layer, and a junction gate electrode brought into contact with the fourth semiconductor layer. The junction gate electrode is electrically connected to the source electrode to have a same potential as a potential of the source electrode, and is disposed only in the active region.

Semiconductor device

A semiconductor device has a semiconductor substrate including an IGBT region operating as an IGBT provided by an emitter layer, a base layer, a drift layer and a collector layer, and a diode region operating as a diode and provided by an anode layer, the drift layer and a cathode layer. The semiconductor substrate further includes a guard ring of a second conduction type, provided in a surface layer of the drift layer in a peripheral region surrounding a device region where the IGBT region and the diode region are adjacent to each other. The cathode layer and the guard ring are positioned such as to satisfy L/d&#x2265;1.5, where L is a minimum value of a distance between the cathode layer and the guard ring as projected to a plane parallel to a surface of the semiconductor substrate, and d is a thickness of the semiconductor substrate.

In a semiconductor device, a boundary area is between an IGBT region and a diode region. In other words, the boundary region is at a position adjacent to the diode region. The boundary region has a lower ratio of formation of a high-concentration P-type layer than the IGBT region. Accordingly, during recovery, hole injection from the IGBT region to the diode region can be inhibited. The reduced ratio of formation of the high-concentration P-type layer in the boundary region also reduces the amount of hole injection from the high-concentration P-type layer of the boundary region. Thus, it inhibits an increase in maximum reverse current during the recovery, and also decreases the carrier density on the cathode side to inhibit an increase in tail electrical current, so that the semiconductor device reduces switching loss and is highly resistant to recovery destruction.

A semiconductor device has an element part and an outer peripheral part, and a deep layer is formed in the outer peripheral part more deeply than a base layer. When a position of the deep layer closest to the element part is defined as a boundary position, a distance between the boundary position and a position closest to the outer peripheral part in an emitter region is defined as a first distance, and a distance between the boundary position and a position of an end of a collector layer is defined as a second distance, the first distance and the second distance are adjusted such that a carrier density in the outer peripheral part is lowered based on breakdown voltage in the outer peripheral part lowered by the deep layer.

A semiconductor device includes: a drift layer; a base layer on the drift layer; a collector layer and a cathode layer opposite to the base layer; multiple trenches penetrating the base layer; a gate electrode in each trench; an emitter region in a surface portion of the base layer and contacting each trench; a first electrode connected to the base layer and the emitter region; and a second electrode connected to the collector layer and the cathode layer. The gate electrodes in a diode region of a semiconductor substrate are controlled independently from the gate electrodes in the IGBT region. A voltage not forming an inversion layer in the base layer is applied to the gate electrodes in the diode region.

Semiconductor device and manufacturing method of the same

A semiconductor device includes a diode provided with: a drift layer being a first conductivity type; a cathode region being provided in a back face side of the drift layer and being the first conductivity type; a second conductivity type region provided in a surface layer part of the drift layer; multiple trenches dividing the second conductivity type region into pieces by being provided deeper than the second conductivity type region, and configuring an anode region; a gate insulation film provided in a surface of the trench; a gate electrode provided in a surface of the gate insulation film; an upper electrode electrically connected with the anode region; and a lower electrode electrically connected with the cathode region. A width between the trenches is narrowest in the drift layer is defined as a mesa width. The mesa width is set to be equal to or greater than 0.3 &#x3bc;m.

A semiconductor device includes a lateral transistor having: a semiconductor substrate including a drift layer; a first impurity layer in the drift layer; a channel layer in the drift layer; a second impurity layer in the channel layer; a separation insulation film on the drift layer between the channel layer and the first impurity layer; a gate insulation film on a channel region between the second impurity layer and the drift layer connected with the separation insulation film; a gate electrode on the gate insulation film and the separation insulation film; a first electrode connected with the first impurity layer; a second electrode connected with the second impurity layer and the channel layer; and a field plate on the separation insulation film between the gate electrode and the first electrode and connected with the first electrode. The field plate is larger than the gate electrode in a current direction.

A semiconductor device includes: an IGBT section including a vertical IGBT; and a diode section arranged along the IGBT section and including a diode. The diode section includes a hole injection reduction layer having a first conductivity type and arranged in an upper layer portion of a drift layer, extending to a depth deeper than an anode region constituted by a second conductivity type region in the diode section, having an impurity concentration lower than an impurity concentration of the anode region and higher than an impurity concentration of the drift layer.

Semiconductor device with IGBT and diode

A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.

Lateral semiconductor device

A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the collector region and is located to a depth deeper than a bottom of the channel layer. The barrier layer has an impurity concentration that is higher than an impurity concentration of the drift layer. The barrier layer has a first end close to the collector region and a second end far from the collector region. The first end is located between the channel layer and the collector region, and the second end is located on the bottom of the channel layer.

Lateral insulated gate bipolar transistor

A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1&#xd7;10cm.

Semiconductor device having lateral element

A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

Current sensor, inverter circuit, and semiconductor device having the same

A semiconductor device having a lateral insulated gate bipolar transistor includes a first conductivity type drift layer, a second conductivity type collector region formed in a surface portion of the drift layer, a second conductivity type channel layer formed in the surface portion of the drift layer, a first conductivity type emitter region formed in a surface portion of the channel layer, and a hole stopper region formed in the drift layer and located between the collector region and the emitter region. Holes are injected from the collector region into the drift layer and flow toward the emitter region through a hole path. The hole stopper region blocks a flow of the holes and narrows the hole path to concentrate the holes.

Semiconductor device having lateral insulated gate bipolar transistor

A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element.

Semiconductor device having SOI substrate

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Shigeki Takahashi