Nec Corporation

Photonics Electronics Technology Research Association

Nippon Steel Corporation

Honda Motor Co., Ltd.

Honda Giken Kogyo Kabushiki Kaisha

Sumitomo Wiring Systems, Limited

Japan Aviation Electronics Industry, Limited

The University of Tokyo

Shigeki Takahashi

Junichi Fujikata

Tetsuharu Ibaraki

Yoichi Abe

Hiroshi Oda

Satoshi Suzuki

Shigeru Nakamura

Mitsuru Takenaka

Shoji Imura

Hiroshi Ichikawa

Nobuyuki Kanemori

Toshikazu Sakurai

Naoki Kikuchi

Hirotomi Nemoto

Naoki Shibata

Masakazu Suzuki

Masashige Ishizaka

Takeshi Kai

Jun Ushida

Tsutomu Fukui

Yuki Matsuura

Masaru Shinmura

Yoshiaki Hirota

Seiichi Hara

Yuji Minoda

Koji Hashimoto

Tadashi Inazu

Masaharu Takahashi

Shogo Usui

Yoshihiro Matsugi

Kiminobu Tabata

Nobuhide Fujioka

Masato Taira

Kazunori Nagai

Shouji Imura

Shintaro Muro

Takashi Yamamoto

Kazune Furudo

Younghyun Kim

A setting apparatus includes: a CPU and a memory connected to the CPU. The memory is configured to store information regarding each of a plurality of users individually using a single space. The CPU is configured to perform: identifying a user to use the space; authenticating the user identified in the identifying; setting devices provided in the space based on the information stored in the memory. The information stored in the memory includes: first information; and second information given stricter restriction than the first information. The CPU is configured to perform: the setting including performing a predetermined setting of the devices provided in the space based on the first information of the user identified in the identifying.

Setting apparatus

An induction heating method for a metal strip is provided to heat a continuously conveyed metal strip using an induction heating device disposed at a first position on a pass line. The induction heating method includes a step of detecting a displacement from a predetermined datum line of a width direction center line of the metal strip at a second position on the pass line that is different from the first position, a step of computing an estimated displacement of the width direction center line of the metal strip at the first position by temporal and spatial extrapolation of the displacement based on a function expressing a time series of changes in the displacement, and a step of controlling a relative positional relationship between the induction heating device and the metal strip in a width direction of the metal strip based on the estimated displacement.

Metal strip induction heating method and induction heating apparatus

Provided is an optical modulator which is small in optical loss, is small in a size, and is low in required voltage and is operable to perform high-speed operation. The optical phase modulatorcomprises a rib-type waveguide structureincluding: a PN junctionwhich is formed of Si and is formed in a lateral direction on a substrate; and an SiGelayerwhich is constituted of at least one layer and is doped with an impurity to a p-type and is superposed on the PN junctionso as to be electrically connected to the PN junction. The rib-type waveguide structurehas a substantially uniform structure along a light propagation direction, and in a direction parallel with the substrate and perpendicular to the light propagation direction, a position of a junction interfaceof the PN junctionis offset from a center of the SiGelayer

Optical modulator and method for manufacturing the same

Provided is a SIS-type electro-optic modulator capable of realizing highly efficient optical coupling with a rib-type Si waveguide, improving modulation efficiency, realizing reduction of electric capacity and lead-out resistance in stacked semiconductor layers. The modulator includes a SIS junction constituted by first and second semiconductor layers having different type of conductivity and a dielectric layer interposed therebetween, wherein an electrical signal from electrodes coupled to the first and second semiconductor layers causes free carriers accumulate, deplete or invert on both sides of the dielectric layer, thereby modulating a free carrier concentration felt by an optical signal electric filed, light having a polarization component orthogonal to the width direction of the SIS junction is incident on the dielectric layer, and the width of the SIS junction is &#x3bb;/nor less (&#x3bb; is the wavelength of the incident light and nis an effective refractive index of the modulator to the incident light).

Electro-optic modulator

An electro-optic device includes a first semiconductor layer including the rib-type waveguide, which includes a rib part and a first slab part, which extends in a first direction from the rib part; a dielectric layer, which is formed on the rib part; a second semiconductor layer, which extends in a second direction, which is opposite to the first direction, from an upper surface of the dielectric layer; a first high-concentration impurity region, which is formed in the first semiconductor layer to be in contact with the first slab part on the first direction side; and a second high-concentration impurity region, which is formed in a region of the second semiconductor layer on the second direction side. The second high-concentration impurity region is formed in a region other than a region overlapping the first semiconductor layer in a lamination direction.

Electro-optic device

An optical phase modulatoraccording to an embodiment of this disclosure comprises a rib-type waveguide structurecomprising: a PN junctioncomprising Si and formed in a lateral direction on a substrate; and a SiGelayerthat is doped with a p-type impurity and comprises at least one layer laminated on the PN junction, so as to be electrically connected to the PN junction

Optical modulator and method of manufacturing same

An optical end coupling type silicon optical integrated circuit is provided using an SOI substrate. This optical integrated circuit is constituted so as to connect with an external optical circuit at an end coupling part and have signal light incident to an optical circuit that includes a curved part. In the plane of the optical integrated circuit, the position of one end coupling part selected from among any thereof and the position of any multimode optical waveguide element to which a respective optical waveguide is connected via a respective curved part satisfy a positional relationship defined on the basis of a beam divergence angle [theta] of stray light.

Optical end coupling type silicon optical integrated circuit

Provided is a silicon-based electro-optic modulator which is small in size and capable of high speed operation. A first silicon semiconductor layer () doped to exhibit a first type of conductivity and a second semiconductor layer () doped to exhibit a second type of conductivity are at least partly stacked together, and a relatively thin dielectric () is formed at the interface between the stacked first and second silicon semiconductor layers (). The first silicon semiconductor layer () has a rib waveguide shape () comprising a rib portion () and slab portions (). A first heavily doped region () formed by a high concentration doping process is arranged at a location, in the first silicon semiconductor layer (), neighboring to each of the slab portions (). The first heavily doped region () has almost the same height as that of the rib portion () of the rib waveguide ().

Silicon-based electro-optic modulator

A low-cost optical circuit, in which influence of reflected light is reduced, is provided. According to an embodiment of the present invention, an optical circuit () comprises a first optical coupler (A) having at least two outputs, and a second optical coupler (B) coupled to at least one of the outputs of the first optical coupler (A), and wherein the ratio of an intensity of light reflected from the first optical coupler (A) to an intensity of light inputted to the first optical coupler is smaller than the ratio of an intensity of light reflected from the second optical coupler (B) to an intensity of light inputted to the second optical coupler.

Optical circuit

An optical modulator includes an optical phase modulator which applies an operating voltage to at least one arm so as to modulate an optical phase of an optical signal transmitted via at least one arm and an optical phase adjuster which applies a voltage below the operating voltage to at least one arm so as to adjust an operating point. In the optical phase adjuster, an optical phase coarse adjuster applies a voltage below the operating voltage to at least one arm so as to change an optical phase of an optical signal by 180&#xb0; or more, while an optical phase fine adjuster applies a voltage below the operating voltage to at least one arm so as to changer an optical phase of an optical signal by 90&#xb0; or less. Thus, it is possible to automatically calibrate an operating point of an optical modulator with low power consumption.

Optical modulator and operating point control method

A rib waveguide type high-order mode filter includes a plate-like slab region; a projection portionformed in a stripe along a waveguiding direction of light on the slab region; and a mesa regionhaving a bottom surface positioned at the same level as that of the bottom surface of the slab regionand a top surface positioned at a higher level than that of the top surface of the slab region, on at least one side of the slab region, wherein the projection portion, the slab region, and the mesa regionare made of the same material; and the mesa regionincludes a doped areain which an optical-absorption function is added by impurity doping into the material.

High-order mode filter

In a region in which silicon semiconductor layers having first and second conductive types are stacked, a concavoconvex structure including a SiGe(x=0.01 to 0.9) layer is formed on a surface of the first silicon semiconductor layer, a relatively thin dielectric is formed on the concavoconvex structure, and a silicon semiconductor layer having the second conductive type is further stacked.

Silicon-based electro-optical device

An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core () which is formed on a clad layer () and includes a portion composed of silicon in which an impurity of 10cmor more is doped, and is used by being optically connected in series with an optical waveguide including a core () composed of silicon. The optical absorption core () is sufficient provided that, at least, an impurity of around 10cmis doped therein. For example, its impurity concentration is sufficient provided that it falls within a range of 10-10cm. The existence of this impurity causes absorption of light in the optical absorption core ().

Optical waveguide type optical terminator

An optical modulator includes a plurality of electrode pads arranged in a zigzag alignment; two arms which are partially bent to circumvent the electrode pads so as to carry out optical phase modulation at various parts based on voltages input via the electrode pads; an optical branch structure branching the arms; and an optical coupling structure aggregating the arms together. Each arm is made of a silicon-base electro-optic element including a substrate; a first conductive semiconductor layer having a rib waveguide structure; a dielectric layer deposited on the rib waveguide structure; and a second conductive semiconductor layer deposited on the dielectric layer. The first conductive semiconductor layer is connected to first electrode wires via first contacts, while the second conductive semiconductor layer is connected to second electrode wires via second contacts. Thus, it is possible to miniaturize the optical modulator which can operate at a low voltage.

Optical modulator and optical modulation device with zigzag electrode and waveguide arm alignment

A high-order mode filter includes a slab region, a band-shaped projection elongated in an optical waveguide direction, a first optical waveguide including a disturbance element and a second optical waveguide. The disturbance element is formed by doping impurities into the slab region, thus indicating a lower refractive index than the slab region. Both the first optical waveguide and the second optical waveguide are alternately arranged. The first optical waveguide may include a disturbance element positioned close to the projection, while the second optical waveguide may include a disturbance element distanced from the projection in the slab region. The high-order mode filter causes a large high-order mode loss due to interference between a removable high-order mode and an intentional high-order mode at the connecting face between the first optical waveguide and the second optical waveguide, thus reducing reflected light and stray light.

Growing community of inventors

Tokyo, Japan

Shigeki Takahashi