Nissin Electric Co., Ltd.

Nissin Ion Equipment Co., Ltd.

Kyoto University

Nidec-read Corporation

Shigeki Sakai

Norihiro Ota

Junzo Ishikawa

Masami Yamamoto

Dan Nicolaescu

Yasuhito Gotoh

Kiyoshi Ogata

Hideki Fujita

Nariaki Hamamoto

Tadashi Ikejiri

Tsukasa Hayashi

Masakazu Adachi

Weijiang Zhao

Yuya Hirai

Tomoya Taniguchi

Takayuki Murayama

Naoya Takahashi

Yosuke Yoshimura

Masato Takahashi

A contact probe may include a Ni pipe that may include a coiled spring structure, and the Ni pipemay contain 0.5 to 10 wt % of phosphorus (P). The contact probe may have improved durability, by reducing shrinkage, after probing performed in a high temperature environment.

Contact probe and electrical connection jig

Provided is a contact probe which may achieve improved heat resistance even when a spring portion thereof is compressed and released in a high temperature environment. The contact probe includes an Ni&#x2014;P layer, and the Ni&#x2014;P layer has different concentrations of P at different positions in a thickness direction of the Ni&#x2014;P layer.

Contact probe

An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.

Ion source

An ion beam irradiation apparatus is provided. The apparatus includes an ion source, a mass separator, and an energy filter. The mass separator sorts dopant ions having a specific mass number and valence from an ion beam extracted from the ion source, and outputs the dopant ions. The energy filter is formed to define a beam passing region for allowing the ion beam to pass therethrough, and configured to have a given filter potential in response to application of a voltage thereto to separate passable ions capable of passing through the beam passing region and non-passable ions incapable of passing through the beam passing region, from each other by a difference in ion energy. The given filter potential is set such that the dopant ions are included in the passable ions, and a portion of unwanted ions which cannot be separated from the dopant ions by the mass separator are included in the non-passable ions.

Ion beam irradiation apparatus

To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.

Ion beam irradiation device and method for suppressing ion beam divergence

An ion beam irradiating apparatus has a field emission electron sourcewhich is disposed in a vicinity of a path of the ion beam, and which emits electrons. The field emission electron sourceis placed in a direction along which an incident angle formed by the electronsemitted from the electron sourceand a direction parallel to the traveling direction of the ion beamis in the range from &#x2212;15 deg. to +45 deg. (an inward direction of the ion beamis +, and an outward direction is &#x2212;).

Ion beam irradiating apparatus, and method of producing semiconductor device

A plasma generating apparatus is provided with a plasma generating apparatus for ionizing gas by high frequency discharge within a plasma generating container to thereby generate a plasma and for discharging the plasma to the outside through a plasma discharge hole, an antenna disposed within the plasma generating container for radiating a high frequency wave, an antenna cover made of an insulator and covering a whole of the antenna, a DC voltage measuring device for measuring a DC voltage between the antenna and the plasma generating container, and a comparator for comparing the DC voltage with a reference value, and outputting an alarm signal when an absolute value of the DC voltage value is larger than the absolute value of the reference value.

Plasma generating apparatus

An ion beam irradiation apparatus is provided with a plasma production device which produces a plasma through the radio frequency discharge and supplies the produced plasma in the vicinity of the substrate The plasma production device includes a plasma producing chamber being elongated along an axis extending in scanning directions X in which the ion beam is moved; a plasma emission hole being provided in a side thereof and elongated along the axis of the plasma producing chamber; and a magnet provided outside the plasma producing chamber for producing a magnetic field having a direction along the axis The magnetic field developed by the magnet contains a magnetic field which has a direction along the axis and bends to the substrate ions contained in the plasma emitted from a plasma emission hole

Ion production device for ion beam irradiation apparatus

When ion beam is irradiated onto a substrate to conduct processing such as ion injection, plasma emitted from a plasma generating device is supplied to a portion close to the substrate to suppress electric charging on a substrate surface caused by ion beam irradiation. A ratio of I /I is kept at a value not lower than 1.8, a ratio of I /I is kept at a value not lower than 0.07 and not higher than 0.7, wherein I is an electric current of the ion beam irradiated onto the substrate , I is an ion current expressing a quantity of ions in the plasma emitted from the plasma generating device and I is an electron current expressing a quantity of electrons in the plasma

Method and device for irradiating an ion beam, and related method and device thereof

A charge-up measuring apparatus has a plurality of measurement conductors being arranged on a plane crossing an ion beam for receiving the ion beam, a plurality of bidirectional constant-voltage elements connected to the measurement conductors in a one-to-one correspondence, and a plurality of current measuring instruments each for measuring the polarity and the magnitude of an electric current flowing through the corresponding bidirectional constant-voltage element.

Charge-up measuring apparatus

A plasma source includes a magnetic field generating unit for generating within a plasma chamber a magnetic field B for electron cyclotron resonance, which has a direction crossing a direction in which the plasma is discharged through a plasma emission aperture. The plasma source is applied to an ion implanting apparatus.

Plasma source ion implanting apparatus using the same

A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.

Growing community of inventors

Kyoto, Japan

Shigeki Sakai