Shibaura Mechatronics Corporation

Kabushiki Kaisha Toshiba

Shigeki Matsunaka

Atsushi Fujita

Yoshinao Kamo

Akira Kikitsu

Kenichiro Yamada

Yoshinari Kurosaki

Hisashi Nishigaki

Shohei Tanabe

Akihiko Ito

Osamu Yamazaki

Tsutomu Kakuno

Koichi Furukawa

Yoshitaka Kawada

Katsumi Iyanagi

Yoji Takizawa

Akira Yamashita

Ivan Petrov Ganachev

Hiroshi Ootsuka

Atsushi Fujihara

Noriaki Goto

Teruaki Orikasa

A film forming apparatus includes: a rotary table provided in a chamber; a processing unit configured to perform plasma processing on a workpiece transferred by the rotary table; an inner wall configured to define a processing space and having an opening facing the rotary table; an outer wall configured to cover a periphery of the inner wall with a gap, and configured to form an exhaust space having an opening facing the rotary table; and an exhaust port connected to an exhaust device, wherein the processing unit is a film forming part configured to form a film by sputtering, and wherein both ends of the outer wall are in contact with a side surface of the chamber, and a portion of an outer periphery of the inner wall and the side surface of the chamber are partitioned, so that a reaction gas does not circulate in the exhaust space.

Film forming apparatus

According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

Electromagnetic wave attenuator, electronic device, film formation apparatus, and film formation method

According to one embodiment, an electromagnetic wave attenuator includes a multilayer member, and a magnetic member. The multilayer member includes a plurality of magnetic layers and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction from the multilayer member toward the magnetic member. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A thickness along the first direction of the magnetic member is not less than &#xbd; of a thickness along the first direction of the multilayer member.

Electromagnetic wave attenuator and electronic device

According to one embodiment, an electromagnetic wave attenuator includes a plurality of magnetic layers, and a plurality of nonmagnetic layers. The plurality of nonmagnetic layers is conductive. A direction from one of the plurality of magnetic layers toward an other one of the plurality of magnetic layers is aligned with a first direction. One of the plurality of nonmagnetic layers is between the one of the plurality of magnetic layers and the other one of the plurality of magnetic layers. A first thickness along the first direction of the one of the plurality of magnetic layers is not less than &#xbd; times a second thickness along the first direction of the one of the plurality of nonmagnetic layers.

A film formation apparatus includes a carrying unit circulating and carrying an electronic component in a sputtering chamber, a film formation processing unit including a mount surface and a mount member which is mounted on the mount surface, and on which the electronic component is placed. The mount member includes a holding sheet having an adhesive surface, and a non-adhesive surface, and a sticking sheet having a first sticking surface with adhesiveness sticking to the non-adhesive surface, and a second sticking surface with adhesiveness sticking to the mount surface of the tray. The adhesive surface includes a pasting region for pasting the electronic components. The first sticking surface sticks across an entire region of the non-adhesive surface corresponding to at least the pasting region to provide a file formation apparatus which employs a simple structure that is capable of suppressing heating of electronic components.

Film formation apparatus

An electronic component, an electronic component manufacturing apparatus, and an electronic component manufacturing method are provided which enable an electromagnetic wave shielding film formed on a package to achieve an excellent shielding characteristic. An electronic componentincludes an electromagnetic wave shielding filmformed on the top face of a package sealing elements. The thickness of the electromagnetic wave shielding filmon the top face of the packageis 0.5 to 9 &#x3bc;m, and the relationship between the average height Rc of the roughness curvature factor of the top face of the packageand the thickness Te of the electromagnetic wave shielding filmis Rc&#x2264;2Te.

Electronic component, electric component manufacturing apparatus, and electronic component manufacturing method

A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.

Magnetron sputtering apparatus and method of manufacturing semiconductor device

A magnetron sputtering apparatus includes: a target provided in a sputtering chamber; a susceptor opposed to the target; a high-frequency power supply connected to the susceptor; a plate provided outside the sputtering chamber and coaxial with a central axis of the target; a rotary motion mechanism configured to rotate the plate about the central axis; S-pole magnets placed on one side of the plate with their S-pole end directed to the target; and first and second N-pole magnets placed on the one side of the plate with their N-pole end directed to the target. The first N-pole magnets are placed along a circle coaxial with the plate and opposed to an outer peripheral vicinity of the target. The S-pole magnets are placed inside the first N-pole magnets and along a circle coaxial with the plate. The second N-pole magnets are placed inside the S-pole magnets and along a circle coaxial with the plate. Magnetic flux density of the first N-pole magnets and the second N-pole magnets are higher than magnetic flux density of the S-pole magnets.

Magnetron sputtering apparatus and method for manufacturing semiconductor device

A laser radiating apparatus controls an intensity of energy of a laser beam output from a laser generating device and radiates an object with the laser beam. The laser radiating apparatus includes an intensity homogenizer for substantially homogenizing distribution of the intensity of energy of the laser beam, an imaging lens for converging the laser beam substantially homogenized by the intensity homogenizer and radiating an object with the laser beam, a slit for removing a part of the converged laser beam and shaping it into a predetermined beam shape, a detector for detecting an intensity of energy of the part of the laser beam removed by the slit, and a control device for controlling the intensity of energy of the laser beam based on a detection signal output from the detector.

Laser radiating apparatus and methods for manufacturing a polycrystalline semiconductor film and a liquid crystal display device

A copper film layer and a resin film are sequentially layered on a skin material, the resin film is irradiated with a laser beam so as to be removed, a mask is formed on the copper film layer by use of the residual of the resin film, thereafter, an etching process is provided thereto, so that a copper film layer pattern is formed on the reflective surface of the skin material.

Growing community of inventors

Yokohama, Japan

Shigeki Matsunaka