Kabushiki Kaisha Toshiba

Asahi Glass Company, Limited

Toshiba Memory Corporation

Agc Inc.

Other

Kioxia Corporation

Agc Chemicals Europe, Limited

Asahi Glass Fluoropolymers Co. Ltd.

Shigeki Kobayashi

Takeshi Yamaguchi

Masaki Yamato

Hiroyuki Fukumizu

Yasuhiro Nojiri

Shinya Higuchi

Jun Hoshikawa

Kazuo Kato

Hiroki Kamiya

Hiroki Nagai

Hiroyuki Hirai

Yasuhiko Matsuoka

Takamasa Okawa

Yoshinori Nakakubo

Ariana Claudia Morgovan-Ene

Anthony Eugene Wade

Masaru Kito

Mitsuru Sato

Kazuhiko Yamamoto

Kei Sakamoto

Shin Tatematsu

Hiroyuki Ode

Ryosuke Sawabe

Satoshi Konagai

Atsushi Konno

Masataka Arai

Gen Kuribayashi

Hiroshi Watanabe

Satoshi Ishikawa

Hidekazu Okamoto

Atsuhiro Kinoshita

Fumihiko Aiga

Kei Watanabe

Kazuya Oharu

Yoshimasa Mikajiri

Masao Shingu

Hiroshi Nakaki

Masaaki Higuchi

Shinichi Nakao

Atsushi Funaki

Tomoya Hosoda

Kenji Aoyama

Daisuke Hagishima

Hanae Ishihara

Masahisa Sonoda

Toru Matsuda

Tatsuya Terada

Hideyuki Tabata

Yasuhiro Uchiyama

Nobuyuki Kasahara

Kenta Yamada

Satoru Kuroki

Taro Shiokawa

Shigeto Oshino

Masahiro Takazawa

Atsumi Yamabe

Tomohiro Yamada

Hideo Katsu

Diane Caine

Soichiro Kitazaki

Tsutomu Murase

Terence Edwin Attwood

Steven McDonald

Philip David Mackrell

Shigeki Hiraoka

Mitsuharu Morozumi

A semiconductor storage includes a stack, columns, and first, second, third, fourth, and fifth insulators. The stack includes first conductive layers, and second and third conductive layers below and above the first conductive layers, respectively. The columns penetrate the stack in a first direction. The first and second insulators penetrate the stack and are separated from each other in a second direction. The third insulator is between the first and second insulators in a third direction. The third insulator includes first and second portions apart from each other in the second direction. The fourth insulator is between the first and second portions. The fifth insulator is between the first and second portions above the fourth insulator. The second conductive layer includes two electrically-separated regions, between which the third and fourth insulators are provided. The third conductive layer includes two electrically-separated regions between which the third and fifth insulators are provided.

Semiconductor storage device and method of manufacturing semiconductor storage device

A memory device includes a substrate, first, second, and third conductive layers, a stack of fourth conductive layers, a memory pillar, and an insulator. The first, second, and third conductive layer are provided above the substrate. The stack of fourth conductive layers is provided above the third conductive layer. The memory pillar extends in the thickness direction through the stack and the third conductive layer and into the second conductive layer in a first region of the memory device. The insulator extends in a thickness direction through the stack, the third conductive layer, and the second conductive layer in a second region of the memory device. The insulator also extends in a second surface direction of the substrate. A thickness of the third conductive layer in a region through which the insulator extends is greater than a thickness of the third conductive layer in the first region.

Memory device

To provide a liquid composition whereby a resin powder can be uniformly dispersed in a resin or the like without being scattered, and a method for producing a film, a laminate or the like by using the liquid composition. The liquid composition comprises a liquid medium and a resin powder dispersed in the liquid medium, and characterized in that the average particle size of the resin powder is from 0.3 to 6 &#x3bc;m, the volume-based cumulative 90% diameter of the resin powder is at most 8 &#x3bc;m, and the resin powder is a resin containing a fluorinated copolymer having a specific functional group. And, the method is a method for producing a film, a laminate or the like by using the liquid composition.

Liquid composition, and method for producing a film and a laminate by using the liquid composition

To provide a modified polytetrafluoroethylene which is excellent in the moldability by paste extrusion and the mechanical property of the molded article. A modified polytetrafluoroethylene fine powder which is a fine powder of a non-melt-moldable modified polytetrafluoroethylene, characterized in that the modified polytetrafluoroethylene comprises units derived from tetrafluoroethylene, units derived from a perfluoroalkyl vinyl ether represented by CF&#x2550;CFO&#x2014;CF(wherein n is an integer of from 1 to 6), and units derived from a perfluoroalkylethylene represented by CH&#x2550;CH&#x2014;CF(wherein m is an integer of from 3 to 6), and that the content of the units derived from the perfluoroalkyl vinyl ether is from 0.1 to 0.25 mass % and the content of the units derived from a perfluoroalkylethylene is from 0.001 to 0.1 mass %, based on all monomer units in the modified polytetrafluoroethylene.

Modified polytetrafluoroethylene fine powder and method for its production, and method for producing tube or hose

To provide a PTFE aqueous dispersion which is excellent in mechanical stability, while being not susceptible to foaming. A polytetrafluoroethylene aqueous dispersion which is characterized by containing from 15 to 70 mass % of PTFE particles having an average primary particle diameter of from 0.1 to 0.5 &#x3bc;m; from 0.1 to 20,000 ppm, to the PTFE particles, of a fluorinated emulsifier selected from a Cfluorinated carboxylic acid which may have an etheric oxygen atom, and salts of thereof; from 1 to 20 parts by mass, to 100 parts by mass of the PTFE particles, of a nonionic surfactant represented by R&#x2014;O-A-H (wherein Ris a Calkyl group, and A is a polyoxyalkylene chain); from 0.004 to 0.040 parts by mass, to 100 parts by mass of the PTFE particles, of a polyether polysiloxane copolymer, wherein the polyether chain consists solely of a polyoxypropylene group; and water.

Polytetrafluoroethylene aqueous dispersion

To optimize the primary particle size of a modified PTFE fine powder to shorten the sintering time during the extrusion molding. A modified polytetrafluoroethylene fine powder which is a fine powder of a non-melt-processable modified polytetrafluoroethylene comprising units derived from tetrafluoroethylene, units derived from hexafluoropropylene, units derived from a perfluoro(alkyl vinyl ether) represented by CF&#x2550;CFO&#x2014;CF(n is an integer of from 1 to 6) and units derived from a (perfluoalkyl)ethylene represented by CH&#x2550;CH&#x2014;CF(m is an integer of from 3 to 7).

Modified polytetrafluoroethylene fine powder and its manufacturing method, and electric wire and tube using it

A semiconductor memory device includes: a first conductive layer and a first insulating layer extending in a first direction, these layers being arranged in a second direction intersecting the first direction; a first semiconductor layer opposed to the first conductive layer, and extending in a third direction intersecting the first and second directions; a second semiconductor layer opposed to the first conductive layer, extending in the third direction; a first contact electrode connected to the first semiconductor layer; and a second contact electrode connected to the second semiconductor layer. In a first cross section extending in the first and second directions, an entire outer peripheral surface of the first semiconductor layer is surrounded by the first conductive layer, and an outer peripheral surface of the second semiconductor layer is surrounded by the first conductive layer and the first insulating layer.

Semiconductor memory device

A semiconductor memory device includes a plurality of first conductor layers that are stacked in a first direction; a first pillar including a first semiconductor layer and extending through the first conductor layers in the first direction; a first charge storage layer that is provided between the first conductor layers and the first semiconductor layer; a plurality of second conductor layers that are stacked in the first direction above an uppermost conductor layer of the first conductor layers; a second pillar including a second semiconductor layer and extending through the second conductor layers in the first direction, the second semiconductor layer electrically connected to the first semiconductor layer; and a conductor pillar or film extending in the first direction through the second conductor layers other than a lowermost layer of the second conductor layers and being in contact with a respective upper surface of each of the second conductor layers.

Semiconductor storage device

To provide a production method for an aqueous emulsion of modified polytetrafluoroethylene which is environmentally friendly and which is suitable for producing a stretched porous body having excellent breaking strength. A production method for an aqueous emulsion of modified polytetrafluoroethylene, which is a method to obtain an aqueous emulsion of modified polytetrafluoroethylene particles having an average primary particle diameter of from 0.10 to 0.30 &#x3bc;m, by subjecting tetrafluoroethylene and a perfluoroalkyl ethylene to emulsion polymerization in an aqueous medium, using a polymerization initiator, in the presence of a fluorinated anionic surfactant having a LogPOW of from 2.4 to 3.4, wherein the amount of the perfluoroalkyl ethylene to be used, is from 120 to 3,000 ppm to the final production amount of the modified polytetrafluoroethylene; at the initiation of the emulsion polymerization, the entire amount of the perfluoroalkyl ethylene is permitted to be present, and, as the polymerization initiator, either one or both of a combination of a bromate and a bisulfite or sulfite, and a combination of a permanganate and oxalic acid, are used.

Production methods for aqueous emulsion, fine powder and stretched porous body of modified polytetrafluoroethylene

According to one embodiment, a stacked body includes a plurality of conductive layers stacked with an insulator interposed. The stacked body includes a first stacked portion and a second stacked portion. The second stacked portion includes a plurality of terrace portions arranged in a staircase configuration with level differences in a first direction and a second direction. The second stacked portion includes a conductive portion and a spacer portion. The conductive portion is connected to the conductive layer and is provided in same layer as the conductive layer. The spacer portion is provided in same layer as the conductive layer and the conductive portion. The spacer portion is of a material different from the conductive portion.

Semiconductor device having a stacked body including a first stacked portion and a second stacked portion

A storage device includes a conductive layer, a plurality of electrode layers stacked on the conductive layer, a wiring above the plurality of electrode layers, an interlayer insulating film between the plurality of electrode layers and the wiring, a semiconductor film penetrating the plurality of electrode layers and the interlayer insulating film in a stacking direction of the plurality of electrode layers, a contact plug penetrating the interlayer insulating film in the stacking direction, and connected to each of the plurality of electrode layers, and a conductive film in the vicinity of the contact plug and penetrating at least one of the plurality of electrode layers in the stacking direction. The semiconductor film is electrically connected to the conductive layer and the wiring, and an entire upper end of the conductive film is covered by an insulating layer.

Storage device

According to an embodiment, a semiconductor memory device comprises: a stacked body including control gate electrodes stacked upwardly of a substrate; a semiconductor layer facing the control gate electrodes; and a gate insulating layer provided between the control gate electrode and the semiconductor layer. The stacked body comprises: a first metal layer configuring the control gate electrode; a first barrier metal layer contacting an upper surface of this first metal layer; a first silicon nitride layer contacting an upper surface of this first barrier metal layer; a first inter-layer insulating layer contacting an upper surface of this first silicon nitride layer; a second barrier metal layer contacting a lower surface of the first metal layer; a second silicon nitride layer contacting a lower surface of this second barrier metal layer; and a second inter-layer insulating layer contacting a lower surface of this second silicon nitride layer.

A semiconductor memory device includes an interconnect layer including a conductive layer and a semiconductor layer of a first conductivity type provided on the conductive layer; a stacked body including a plurality of electrode layers stacked on the interconnect layer, a semiconductor pillar provided in the stacked body and extending through the plurality of electrode layers in a stacking direction thereof; and an insulating layer provided on the interconnect layer and extending along a lateral surface of the stacked body. The semiconductor layer includes a first semiconductor region of a second conductivity type positioned between the insulating layer and the conductive layer, and the first semiconductor region is in contact with the conductive layer.

According to an embodiment, a semiconductor memory device comprises a substrate, a plurality of first conductive layers, a memory columnar body, a first semiconductor layer, a second semiconductor layer and a contact. The plurality of first conductive layers are stacked upwardly of the substrate. The memory columnar body extends in a first direction intersecting an upper surface of the substrate and a side surface of the memory columnar body is covered by the first conductive layers. The first semiconductor layer is connected to a lower end of the memory columnar body and extends in a second direction intersecting the first direction. The second conductive layer is provided between the first semiconductor layer and the first conductive layers. The second conductive layer is connected to the memory columnar body and extending in the second direction. The contact is connected to the second conductive layer and extends in the first direction.

Growing community of inventors

Kuwana, Japan

Shigeki Kobayashi