Sharp Kabushiki Kaisha Corporation

Other

Semiconductor Energy Laboratory Co., Ltd.

Sharp Corporation

Kyoto University

Keio University

Hikaru Kobayashi

Shigeki Imai

Steven J Frank

Tomoyuki Nagai

Terumasa Yoneda

Kazuharu Date

Masahiko Wada

Shunpei Yamazaki

Jun Koyama

Kazuhiko Inoguchi

Hiroaki Fukuda

Kazuya Fujimoto

Eiji Ogino

Katsuhiro Masui

Tooru Yamamoto

Yoshihisa Nakatoh

Takeshi Yoshii

Kazuhiro Maeda

Yasushi Kubota

Tamotsu Sakai

Kenshi Tada

Takafumi Shimatani

Tatsunori Nakamura

Kenji Taniguchi

Hiroshi Mikami

Yukihiro Nakamura

Kazuo Kimura

Hiroyuki Ochi

Naohisa Ohta

Hatsukazu Tanaka

Sadayasu Ono

Kazuhiro Nagasawa

Yuusuke Kajikawa

Fumio Murooka

An image display device () controls a backlight luminance on the basis of a plurality of areas corresponding to LEDs, which are defined by dividing an input image. To cause sides of each subscreen to coincide with sides of its corresponding area, a subscreen control section () included in the image display device () changes positions and sizes of subscreen input images Dvto Dvincluded in a multiscreen input image Dv, the positions and the sizes being determined by subscreen setting data Ds, which is setting information. As a result, the number of areas corresponding to each subscreen is reduced, so that the number of LEDs to be lit up is reduced without causing display failures, thereby achieving low power consumption.

Image-display device and control method of same

Disclosed is a thin-film transistor () manufacturing method that includes a process for forming a nitrate film () that includes residual nickel () on a surface thereof, by bringing a nitric acid solution into contact with a polysilicon layer (); and a process for removing the nitrate film () that includes residual nickel () from the polysilicon layer () surface. With this surface treatment process, a polysilicon layer () with reduced concentration of a surface residual nickel () is provided, and a thin-film transistor () having excellent surface smoothness is attained.

Semiconductor apparatus and manufacturing method of same

A pn junction type solar cell is formed in a predetermined region on a substrate made of glass. Light emitted from a light emitting unit reaches an n-type semiconductor layer after it passed through substrate. The solar cell generates electromotive force corresponding to a quantity of the emitted light. A control circuit, a mask ROM, a transmitting circuit and an antenna are formed on an upper side of the solar cell. A surface of a semiconductor storage device is entirely covered with an insulating film to block entry of outside air. The insulating film is typically formed of physicochemically stable glass or silicon dioxide.

Semiconductor storage device and storage system

The invention provides, in one aspect, a virtual processor that includes one or more virtual processing units. These virtual processing units execute on one or more processors, and each virtual processing unit executes one or more processes or threads (collectively, 'threads'). While the threads may be constrained to executing throughout their respective lifetimes on the same virtual processing units, they need not be. The invention provides, in other aspects, virtual and/or digital data processors with improved dataflow-based synchronization. A process or thread (collectively, again, 'thread') executing within such processor can execute a memory instruction (e.g., and &#x201c;Empty&#x201d; or other memory-consumer instruction) that permits the thread to wait on the availability of data generated, e.g., by another thread and to transparently wake up when that other thread makes the data available (e.g., by execution of a &#x201c;Fill&#x201d; or other memory-producer instruction).

Virtual processor methods and apparatus with unified event notification and consumer-producer memory operations

The invention provides an embedded processor architecture comprising a plurality of virtual processing units that each execute processes or threads (collectively, 'threads'). One or more execution units, which are shared by the processing units, execute instructions from the threads. An event delivery mechanism delivers events&#x2014;such as, by way of non-limiting example, hardware interrupts, software-initiated signaling events ('software events') and memory events&#x2014;to respective threads without execution of instructions. Each event can, per aspects of the invention, be processed by the respective thread without execution of instructions outside that thread. The threads need not be constrained to execute on the same respective processing units during the lives of those threads&#x2014;though, in some embodiments, they can be so constrained. The execution units execute instructions from the threads without needing to know what threads those instructions are from. A pipeline control unit which launches instructions from plural threads for concurrent execution on plural execution units.

General purpose embedded processor

The invention provides, in one aspect, a virtual processor that includes one or more virtual processing units. These virtual processing units execute on one or more processors, and each virtual processing unit executes one or more processes or threads (collectively, 'threads'). While the threads may be constrained to executing throughout their respective lifetimes on the same virtual processing units, they need not be. An event delivery mechanism associates events with respective threads and notifies those threads when the events occur, regardless of which virtual processing unit and/or processor the threads happen to be executing on at the time. The invention provides, in other aspects, virtual and/or digital data processors with improved dataflow-based synchronization. A process or thread (collectively, again, 'thread') executing within such processor can execute a memory instruction (e.g., an &#x201c;Empty&#x201d; or other memory-consumer instruction) that permits the thread to wait on the availability of data generated, e.g., by another thread and to transparently wake up when that other thread makes the data available (e.g., by execution of a &#x201c;Fill&#x201d; or other memory-producer instruction).

Virtual processor methods and apparatus with unified event notification and consumer-produced memory operations

In a manufacturing method of a thin film transistor (), the oxide film forming step is performed whereby: a process-target substrate () having a surface on which a gate oxide film () should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a gate oxide film () is formed through direct oxidation of polycrystalline silicon () on the process-target substrate (). With this step, a silicon dioxide film () is formed while growing a silicon dioxide film () on the process-target substrate. Accordingly, the interface between the polycrystalline silicon () and the gate oxide film () is kept clean. The gate oxide film () is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor () contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device

An object of the present invention is to provide an electronic circuit device capable of reducing the occurrence of electromagnetic waves associated with the propagation of a signal by utilizing light as a signal. The electronic circuit device has a transparent substrate (hereinafter written as a substrate) over which an optical sensor and an optical shutter and an electronic circuit composed of thin film transistors (TFTs) are formed. An optical signal is inputted from an external into the electronic circuit device, the optical signal is directly irradiated on the optical sensor over the substrate, and penetrates through the substrate, and inputted into an optical sensor over another substrate. The optical sensor converts the optical signal into an electronic signal, and the circuit over the substrate operates. A control signal controls the optical shutter, a light is inputted from the external into this optical shutter, and whether it is transmitted or it is interrupted is determined, whereby the signal is taken out.

Electronic circuit device

A transistor model for a simulator simulates a resistance between a source region and a drain region with a model equation which has terms representing resistance values corresponding respectively to areas of mutually different impurity concentrations below a gate section in simulating characteristics of a transistor. At least two of the terms each having a threshold parameter indicating a voltage at which a semiconductor element composed of the associated region and regions adjacent to that region changes from an ON state to an OFF state. The threshold parameters of the terms being specified independently from each other. Thus, the characteristics of a transistor having a set of areas of mutually different impurity concentrations below a gate section, inclusive of subthreshold regions which are difficult to evaluate through actual measurement, can be simulated to high accuracy while preserving a good fit with a capacitance model.

Simulator and parameter extraction device for transistor, simulation and parameter extraction method for transistor, and associated computer program and storage medium

In a manufacturing method of a thin film transistor (), the oxide film forming step is performed whereby: a process-target substrate () having a surface on which a gate oxide film () should be formed is immersed in an oxidizing solution containing a; active oxidizing species; and a gate oxide film () is formed through direct oxidation of polycrystalline silicon () on the process-target substrate (). With this step, a silicon dioxide film () is formed while growing a silicon dioxide film () on the process-target substrate. Accordingly, the interface between the polycrystalline silicon () and the gate oxide film () is kept clean. The gate oxide film () is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor () contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.

An object of the present invention is to provide an electronic circuit device capable of reducing the occurrence of electromagnetic waves accompanying the propagation of a signal. The electronic circuit device comprises a plurality of transparent substrates, on which an optical sensor and an optical shutter are formed. An optical signal is inputted from the external into the electronic circuit device, and the optical signal is directly irradiated on the optical sensor disposed on the transparent substrate, or the optical signal is transmitted through the transparent substrate and inputted into an optical sensor on the other substrate. The optical sensor converts the optical signal into an electric signal, and the circuit disposed on the substrate is operated. The optical shutter is controlled by the output of the circuit, the light is inputted from the external into this optical shutter, and whether the light has been transmitted or not is determined, thereby taking out the signal. In this way, by reducing electric signals for input and output, the occurrence of unnecessary electromagnetic waves is prevented.

Electronic circuit device with optical sensors and optical shutters at specific locations

A cryptosystem includes an encrypting device, a communication path, and a decrypting arithmetic device. Key generation means in the encrypting device generate a public key {g, g} as random numbers respectively including the power of (p&#x2212;1) and the power of (q&#x2212;1) and decrypt a message m using the Fermat's little theorem and the Chinese remainder theorem. This makes it possible to suggest an extremely simple cryptosystem, which is simplified by reducing the amount of computations for encryption and decryption and enables encryption and decryption by simple calculations, while maintaining a security equivalent to the RSA encryption scheme.

Encrypting device, decrypting device, cryptosystem including the same devices, encrypting method, and decrypting method

A remote control receiving device mounted on an apparatus has a switch circuit and an LED. The switch circuit is connected between a power supplied circuit of the apparatus and a power source. The LED functioning as a light receiving element receives an optical signal from a transmitting device. When the apparatus turns into a standby state based on an optical signal from a transmitting device, the switch circuit is brought into OFF by a microcomputer in the remote control receiving device. This intercept supply of power to the remote control light receiving circuit as well as the apparatus. When the LED receives an optical signal from the transmitting device, the LED outputs a electric control signal under an unbias state to turn on the switch circuit. Thereby, power is supplied to the apparatus.

Power control device, remote control receiving device and optical communication device with zero power consumption during standby

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Nara, Japan

Shigeki Imai