Sharp Kabushiki Kaisha Corporation

Shigeki Hayashida

Hiroshi Iwata

Toshimasa Matsuoka

Seizou Kakimoto

Tatsuya Morioka

Masayuki Nakano

Yoshihiko Tani

Isamu Ohkubo

Seizo Kakimoto

Hideo Wada

Toshihiko Fukushima

Katsuji Iguchi

Masaru Kubo

Shinichi Sato

Kazuhiro Natsuaki

Naoki Fukunaga

Akio Kawamura

Sung T Ahn

Tomohiko Tateyama

A light receiving device includes a silicon substrate, a first P type diffusion layer on the silicon substrate, and a P type semiconductor layer on the P type diffusion layer. On a surface part of the P type semiconductor layer, two N type diffusion layers as light receiving parts, and a second P type diffusion layer between the two N type diffusion layers are provided. On the P type semiconductor layer, an antireflection film structure composed of a first silicon oxide formed by thermal oxidation and a second silicon oxide formed by CVD is provided. A film thickness of the first silicon oxide is set at about 15 nm, thus a defect in a interface between the first silicon oxide and the P type semiconductor layer is prevented. A film thickness of the second silicon oxide is set at about 100 nm, thus a leak current between cathodes is prevented when a power supply voltage is applied for long period of time.

Light receiving element and light receiving device incorporating circuit and optical disk drive

A plurality of N-type diffusion layers are formed a specified distance apart on a P-type semiconductor layer. A P-type leak prevention layer formed between at least N-type diffusion layers prevents leaking between the diffusion layers. A dielectric film is formed in at least a light incident area on a P-type semiconductor layer including the diffusion layers and the leak prevention layer. Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit-built-in light receiving element and an optical disk device using the split type light receiving element.

Split type light receiving element and circuit-built-in light-receiving element and optical disk drive

A photodiode includes a first conductivity type semiconductor substrate or a first conductivity type semiconductor layer; a second conductivity type semiconductor layer provided on the first conductivity type semiconductor substrate or the first conductivity type semiconductor layer; an anti-reflection film provided on a surface of a portion of the second conductivity type semiconductor layer which is in a light receiving area; a first conductive layer provided in an area in the vicinity of the light receiving area; and a passivation layer provided on the first conductive layer. Light incident on the photodiode is detected by a junction of the one of the first conductivity type semiconductor substrate and the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer. The area in the vicinity of the light receiving area includes a window area having an opening in the passivation layer for partially exposing the first conductive layer.

Photodiode device including window defined in passivation layer for removing electrostatic charge

A surface-channel MOS transistor comprising; a gate electrode formed on a semiconductor substrate with a gate dielectric film therebetween and source/drain regions formed in the semiconductor substrate wherein the gate electrode is formed at least a polysilicon layer of a thickness of 100 to 200 nm uniformly doped with an impurity and the source/drain regions contains the same impurity in self-alignment with the gate electrode.

Surface-channel metal-oxide semiconductor transistors, their complementary field-effect transistors and method of producing the same

A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.

Semiconductor device having junction depths for reducing short channel effect

A circuit-containing photodetector is provided which can have a high sensitivity and response to light of a short wavelength and can be manufactured in a good yield. The circuit-containing photodetector includes a semiconductor substrate, a semiconductor layer formed thereon, and a conductive impurity region formed in the semiconductor layer for transmitting a signal. In the semiconductor layer, a trench is formed to have a depth to reach the substrate. An impurity region of a photodetector element is formed at the surface of the semiconductor substrate exposed at the bottom of the trench. A signal processing circuit for processing an electric signal from the photodetector element is formed on the semiconductor layer. The conductive impurity region for transmitting the electric signal from the photodetector element is formed to extend from the bottom of the trench to the upper surface of the semiconductor layer.

Circuit-containing photodetector, method of manufacturing the same, and optical device using circuit-containing photodetector

A circuit-incorporating light receiving device comprises a first semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a diffusion region of the second conductivity type, provided in a first portion of the second semiconductor layer of the first conductivity type, a circuit element provided in the first portion of the first semiconductor layer of the first conductivity type and a second portion of the second semiconductor layer of the first conductivity type. The second semiconductor layer of the first conductivity type and the diffusion region of the second conductivity type form a light detection photodiode portion, and the diffusion region of the second conductivity type has a diffusion depth less than or equal to a penetration depth of short-wavelength signal light.

Circuit-incorporating light receiving device

Fabrication method for a semiconductor device

An insulated-gate field-effect transistor formed in a substrate of a first conductive type or in a well of the first conductive type formed in the substrate is provided. The transistor includes a channel region containing an impurity of the first conductive type; and a source-drain region containing an impurity of a second conductive type. The source-drain region further contains an impurity of the first conductive type; and a concentration of the impurity of the first conductive type contained in the source-drain region is greater than a concentration of the impurity of the first conductive type contained in the channel region but is less than a concentration of the impurity of the second conductive type contained in the source-drain region.

Insulated-gate field-effect transistor and method for producing the same

Element isolation regions are first formed on a silicon substrate. Active regions other than the isolation regions are formed with an oxide film. Then, a first oxidization prevention layer, a semiconductor layer and a second oxidization prevention layer are formed on the substrate in that order. A resist pattern having a hole in a P-channel MOS transistor formation region is formed. The second oxidization prevention layer in the P-channel MOS transistor formation region is removed and an impurity is ion-implanted using the resist pattern as a mask. After removing the resist pattern, the substrate is thermally treated in the presence of an oxidizer substance to transform an exposed portion of the semiconductor layer into an oxidized semiconductor layer and at the same time to diffuse the implanted impurity in the substrate to thereby form an N-well. After removing the remaining second oxidization prevention layer and the semiconductor layer located under the remaining second oxidization prevention layer, an impurity is ion-implanted into the substrate using the oxidized semiconductor layer as a mask, to thereby form a P-well in a N-channel MOS transistor formation region of the substrate. Then the P-channel and N-channel MOS transistors are formed in respective regions.

Semiconductor device producing method requiring only two masks for

A method for preparing a semiconductor device comprises the following steps: (I) depositing at least nitride film on the whole surface of a semiconductor substrate having a field oxide film, (II) removing a portion of the nitride film from a gate-formation region to form an opening at the nitride film up to the substrate, (III) thereafter forming by selective oxidation a vertically projecting oxide film on the substrate at the opening portion, (IV) then removing all the films including the oxide film and the nitride film each covering the substrate to form a dug part of the substrate at the gate formation region, (V) providing on the dug part a gate oxide film and a gate electrode in the order, (VI) doping an impurity ion into the substrate in a manner of self-alignment using the gate electrode as a mask, and (VII) applying heat treatment to the substrate to form an impurity-diffused region.

Growing community of inventors

Nara, Japan

Shigeki Hayashida