Sony Corporation

Kao Corporation

Sony Deutschland Gmbh

Shigeki Hashimoto

Daisuke Kodama

Hiroshi Nakajima

Masao Ikeda

Katsunori Yanashima

Tsunenori Asatsuma

Michio Oka

Markus Kamm

Hiroki Kikuchi

Zoltan Facius

Olivier Ripoll

Nadin Roesler

Bottle

The present invention relates to an image generating apparatus () which comprises an illumination unit () having an intermediate face (, S), as well as an image modulator () for generating an image (I). In addition a deflecting means () for deflecting a received light beam (L) of primary illumination light (L) to said illumination unit () is provided in order to irradiate said intermediate face (, S). Said deflecting means () is adapted to have&#x2014;during the process of irradiating said intermediate face (, S)&#x2014;said light beam (L) subsequently in time irradiate different portions of said intermediate face (, S) in order to thereby reduce the speckle effect.

Image generating apparatus

An image projection apparatus includes a one-dimensional spatial light modulating element and a polygon scanner having four or five mirror facets. The polygon scanner scans a light beam modulated by the one-dimensional spatial light modulating element in a direction that is substantially perpendicular to the length direction of the one-dimensional spatial light modulating element so as to display an image.

Image projection apparatus

Speckle noise is reduced to increase image quality in an image display apparatus such as a projection display or the like. An illuminating optical device in an image display apparatus () applies a laser beam L to a GLV (spatial modulator) () and modulates the laser beam based on an image signal input to the GLV to display an image. A plurality of laser beams (. . . ) each having an optical path difference greater than the coherence length of the laser beam are applied to the GLV.

Illuminating optical device in image display device and image display device

A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer is made of two or more semiconductor layers different in band gap, and a part of the p-type cladding layer near one of its boundaries nearer to the active layer is made of a semiconductor layer having a large band gap than that of the remainder part. More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer is made of a p-type Al Ga N layer in contact with a p-type GaN optical guide layer, and a p-type Al Ga N layer overlying the p-type Al Ga N layer (where 0&lE;x2<x1&lE;1).

Semiconductor light emitting device

A method of fabricating a group III-V nitride compound semiconductor in which high crystallinity is achieved without lack of nitrogen, even when it is grown at a low temperature, and a method of fabricating a semiconductor device employing the method of fabricating a group III-V nitride compound semiconductor are provided. Along with carrier gas, a gas source including a nitrogen-including compound such as hydrazine, a substitution product of hydrazine, amine or azide as a nitrogen source is supplied to a reaction tube of a MOCVD apparatus. These nitrogen-including compounds have higher decomposition efficiencies than those of ammonia. Therefore, even though MOCVD is performed at a growth temperature below or equal to 900&deg; C., a large amount of nitrogen which contributes growth is supplied onto the growth surface of a substrate (that is, an underlying layer). As a result, crystallinity of the group III-V nitride compound semiconductor layer is improved. Further, the amount of the supplied nitrogen source relative to the amount of the source of the group V element supplied can be made smaller.

Method of fabricating group III-V nitride compound semiconductor and method of fabricating semiconductor device

The present invention provides a method for growing a semiconductor layer by which the size of generable voids is controllable, inclination of the c-axis of the semiconductor crystal is avoidable and the defects in the semiconductor layer is reducible, in which a first semiconductor layer typically made of GaN is formed in a ridge pattern on a substrate, and a second semiconductor layer typically comprising GaN is then formed on the first semiconductor layer under a condition by which the growth rate in the direction parallel to the major plane of the substrate is larger than that in the direction perpendicular thereto, which is attainable by controlling the pressure in a reaction chamber in which the vapor-phase growth proceeds at 53,200 Pa (400 Torr) or above, to allow the side planes of the second semiconductor layer incline at an acute angle to the bottom plane thereof.

Method for growing semiconductor layer and method for fabricating semiconductor light emitting elements

When nitride series III-V group compound semiconductor is manufactured by gas phase growing using starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (H /(H &plus;NH )) is specified to 0.3<(H /(H &plus;NH ))<0.7, 0.3<(H /(H &plus;NH ))<0.6 or 0.4<(H /(H &plus;NH ))<0.5. A nitride series III-V group compound semiconductor can thus be manufactured with less non-emission center and of excellent crystallinity.

Growing community of inventors

Tokyo, Japan

Shigeki Hashimoto