Idemitsu Kosan Company, Limited

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National University Corporation Tokai National Higher Education and Research System

Shigekazu Tomai

Kazuyoshi Inoue

Koki Yano

Hirokazu Kawashima

Masashi Kasami

Masatoshi Shibata

Yuki Tsuruma

Emi Kawashima

Kazuaki Ebata

Masato Matsubara

Shigeo Matsuzaki

Futoshi Utsuno

Yoshihiro Ueoka

Takashi Sekiya

Motohiro Takeshima

Hiromi Hayasaka

Kota Terai

Nobuo Tanaka

Tokie Tanaka, Legal Representative

Satoshi Katsumata

Makoto Ando

Kenji Goto

Hiroshi Amano

Yoshio Honda

Masayuki Itose

Akira Kaijo

Maki Kushimoto

Yukio Shimane

Kenichi Sasaki

Masashi Oyama

Mami Itose

Manato Deki

A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10S/cm or more.

Light emitting device with electrode having specified molar ratio of magnesium to zinc

A garnet compound represented by a general formula (I):LnInGaAlO  (I)(in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

Garnet compound, sintered body and sputtering target containing same

A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Oxide semiconductor substrate and schottky barrier diode

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80&#x2264;In/(In+Y+Ga)&#x2264;0.96&#x2003;&#x2003;(1),0.02&#x2264;Y/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(2), and0.02&#x2264;Ga/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(3), and

Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor

A garnet compound represented by a general formula (I): LnInGaAlO(I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0&#x2264;X&#x3c;3).

A sintered body, containing zinc, magnesium and oxygen as constituent elements, wherein the atomic ratio of zinc to the sum of zinc and magnesium [Zn/(Zn+Mg)] is 0.20 to 0.75, the atomic ratio of magnesium to the sum of zinc and magnesium [Mg/(Zn+Mg)] is 0.25 to 0.80, and the sintered body consists of a single crystal structure as measured by X-ray diffraction.

Sintered body

An oxide sintered body includes a bixbyite phase represented by InO, and a garnet phase represented by YInGaO.

Oxide sintered body and sputtering target

A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

Laminated body

An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

Oxide sintered body, sputtering target and oxide semiconductor film

A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.

Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistor

A semiconductor devicewhich comprises a pair of an ohmic electrodeand a Schottky electrodeseparated from each other, and a semiconductor layerin contact with the ohmic electrodeand the Schottky electrode, and which satisfies the following formula (I): in which n is a carrier concentration (cm) of the semiconductor layer, &#x3b5; is a dielectric constant (F/cm) of the semiconductor layer, Vis a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode.

Semiconductor device and electric apparatus using same

A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

Laminated article

A sputtering target including a sintered body:

Sputtering target

A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.

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Sodegaura, Japan

Shigekazu Tomai