Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

Hitachi Cable, Inc.

Hitachi Industries Co., Ltd.

Shigehisa Motowaki

Ryoichi Kajiwara

Ken Takahashi

Takashi Naito

Masahiko Ogino

Takashi Namekawa

Takao Miwa

Shingo Shirakawa

Yasutaka Suzuki

Shigeru Tanaka

Hiroki Yamamoto

Toshiya Satoh

Hiroshi Hozoji

Toshiaki Ishii

Akihiro Miyauchi

Takao Ishikawa

Kosuke Kuwabara

Takeo Yamazaki

Tadanori Segawa

Takuya Nakajo

Katsuo Arai

Seiichi Yamada

Kazutoshi Itou

Hidemasa Kagii

Osamu Shiono

Kazutoshi Ito

Yusuke Asaumi

Moritaka Syouji

Yoshinori Suzuki

Haruo Akahoshi

Tomiya Abe

Toshihide Nabatame

Takeshi Hoshino

Kunihiro Maeda

Katsumi Mabuchi

Takashi Naitou

Michifumi Kawai

Yoshiyuki Ando

Toyota Honda

Yoshihiro Kato

Tomohiko Murase

Ryohei Sato

Daigoro Kamoto

Junji Nakata

Hiroshi Akai

Toshiya Sato

Daigorou Kamoto

Moritaka Shoji

Yasuhiro Matsuoka

Shinichi Oowada

Seiich Yamada

Tadashi Kitami

Provided are a metal-resin composite having excellent adhesive strength, a method for producing the same, a busbar, a module case, and a resinous connector part. The metal-resin composite comprises a metallic memberincluding a metal with a high melting point of 500&#xb0; C. or more, a resin memberbeing integrated with the metallic member; and an alloy layerincluding a metal with a low melting point lower than 500&#xb0; C. The alloy layeris arranged between the metallic memberand the resin member, and has average surface roughness thereof in the range from 5 nm or more to less than 1 &#x3bc;m at the interface between the alloy layerand the resin member. Herein, a period of the unevenness formed on the interface of the alloy layeris in the range from 5 nm or more to less than 1 &#x3bc;m.

Metal-resin composite, method for producing the same, busbar, module case, and resinous connector part

Reliability is improved by improving adhesiveness, crack resistance, and moisture resistance of a metal member-resin jointed body by enhancing adhesiveness between the metal member and the resin. A jointed body of a metal member and a resin including: an intermediate layer and a silane coupling agent layer formed on the metal member at an interface between the metal member and the resin, wherein the silane coupling agent layer and the resin are contacted; the intermediate layer is any one of an oxide layer of the metal, a chelating agent layer, a composite layer made of the oxide layer and the chelating agent layer, and a mixed layer made of the oxide and the chelating agent; and the intermediate layer has an electrically non-insulating characteristic, and a method of manufacturing the same.

Semiconductor package having a metal member and a resin mold, which are bonded to a silane coupling agent and an intermediate layer of an oxide film

There is provided an enameled insulated wire, which includes: a metal conductor; an intermediate layer around the metal conductor, the intermediate layer containing metal oxide particles, the metal oxide particles including at least one oxide selected from a group consisting of zinc oxides, tin oxides, compound oxides of zinc and the metal constituent of the metal conductor, and compound oxides of tin and the metal constituent of the metal conductor, diameter of the metal oxide particles being predominantly from 1 to 50 nm; and an insulation coating around the intermediate layer.

Enameled insulated wire and manufacturing method thereof

In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

Semiconductor device and method of manufacturing the same

A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

Fabrication method for resin-encapsulated semiconductor device

An object of the present invention is to provide a composition of a sintering Ag paste which can metallically bond to a nonprecious metal member with high strength as well as to a precious metal member, in a sintering Ag paste which metallically bonds to a metal at a low temperature, and to provide a bonding method to obtain a joint part having high strength. The sintering Ag paste is a material containing a solution of an organic silver complex that is easily decomposed by heat regardless of an atmosphere. Furthermore, the bonding method includes: metallizing a face of a nonprecious metal with Ag in a non-oxidizing atmosphere in a step prior to sintering Ag particles; and then sintering the Ag particles in an oxidizing atmosphere.

Sintering silver paste material and method for bonding semiconductor chip

A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350&#xb0; C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body.

Metal-resin-boned structured body and resin-encapsulated semiconductor device, and fabrication method for them

Through an improvement of module size increase due to mounting a single passive element on a substrate and an increase in the mounting cost, to provide a highly reliable, high performance and small sized electronic circuit component which permits to integrate a variety of electronic parts such as capacitors, inductors and resistors in a high density with low cost. The electronic circuit component comprises an insulator substrate, a plurality of electrodes having different areas provided on the insulator substrate, one or more elements selected from a capacitor element of dielectric material sandwiched between the electrodes, an inductor element and resistor element, a metal wiring connecting the elements, a metal terminal part of a part of the metal wiring and an organic insulator material covering the elements and the circumference of the metal wiring portion excluding the metal terminal portion.

Electronic circuit component

A wiring glass substrate includes a glass substrate formed of glass and having a plurality of holes formed at predetermined positions, bumps so formed as to be connected to a conductive material filling the holes and wirings formed on a surface opposite to a surface having the bumps formed thereon and electrically connecting a plurality of connection terminals arranged in intervals different from intervals of the holes to the conductive material. The shape of the conductive material is porous and porous electrodes are bonded to the inner wall surfaces of the holes by an anchor effect to increase the strength of the glass substrate.

Wiring glass substrate for connecting a semiconductor chip to a printed wiring substrate and a semiconductor module having the wiring glass substrate

A pillar with a high aspect ratio is transferred by a nanoprinting method. In order to form a fine structure on a substrate, a nanoprinting apparatus heats and presses the substrate and a mold with a fine concave-convex pattern formed thereon, the mold having a mechanism for transferring and applying a mold-releasing agent. A method for transferring a fine structure using the aforementioned nanoprinting apparatus.

Nanoprint equipment and method of making fine structure

Provided is a nanoprint apparatus in which a substrate and a mold formed on its surface with fine concavities and convexities are heated and pressed with each other through the intermediary of a buffer member interposed therebetwen, including a mechanism for successively replacing the buffer member with new one at each time which the mold and the substate are heated and pressed, thereby it is possible to form a fine structure on the substrate.

Conventionally, there is a description about stereophonically reproducing downloaded musical pieces or those stored on a memory card. A call speech is supported in monaural only. A realistic telephone call using stereo sound has been unavailable. The present invention aims at providing a cellular phone capable of a telephone call using stereo sound. The cellular phone terminal capable of speech communication with another information processing terminal. The cellular phone terminal is configured to comprise: a plurality of speakers for the speech communication; a receiver to receive a speech signal from a plurality of microphones of the other information processing terminal; and a processor to provide control so that the plurality of speakers can output the speech signal received by the receiver.

Cellular phone terminal

In the manufacture of a gas discharge type display panel, by applying a sealing operation along with an exhausting operation, the sealing glassis broken down by a pressure difference between the inside and outside of the panel, and thus, the clearance gap between the substrates can be controlled as desired. In addition, the gaseous component that is unnecessary for the discharge operation is exhausted by setting the temperature of the amorphous sealing glass to exceed its softening-point and be no more than its working point. In the structure of the gas discharge type display panel, a protruding portion having a radius of curvature between 0.1 mm and 1 mm is formed on the sealing glass to reduce the dispersion in the thickness direction of the sealing glass, or the cross-sectional shape of the sealing glass is made convex both at its inside end part and its outside end part.

Gas discharge type display panel and production method therefor

Growing community of inventors

Hitachi, Japan

Shigehisa Motowaki