Shin-Etsu Chemical Co., Ltd.

Shin-Etsu Bio., Inc.

Nippon Telegraph and Telephone Corporation

The Institute of Physical and Chemical Research

Other

Shigehiro Nagura

Satoshi Watanabe

Toshinobu Ishihara

Kanji Murofushi

Jun Hatakeyama

Akira Yamamoto

Osamu Watanabe

Tsunehiro Nishi

Taira Homma

Katsuya Takemura

Jun Watanabe

Tsuguo Yamaoka

Takeshi Nagata

Youichi Ohsawa

Minoru Takamizawa

Richard W Armentrout

Yoshihumi Takeda

Tomoyoshi Furihata

Junji Tsuchiya

Takeshi Kinsho

Yoshio Kawai

Mutsuo Nakashima

Ichiro Kaneko

Akinobu Tanaka

Kiyoshi Motomi

Tomohiro Kobayashi

Kazunori Maeda

Isao Endo

Kinya Ogawa

Kaname Inoue

Kazumasa Maruyama

Wataru Kusaki

Junji Shimada

Yoichi Osawa

Koji Hasegawa

Tohru Kubota

Takanobu Takeda

Mikio Endo

Ryuichi Saguchi

Kenji Funatsu

Ikuo Fukui

Kenichi Tomita

Toyohisa Sakurada

Akihiro Seki

Hiroshi Umezawa

Kazuhiro Hirahara

Jiro Moriya

Noboru Aiba

Yoshitaka Yanagi

Tetsuya Mayuzumi

Satoshi Uchida

Kazuyuki Yamamoto

Taira Honma

Kaysuya Takemura

Takesi Nagata

Yoshiyuki Kohno

Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided. In addition, provided is a pattern formation process comprising steps of applying the resist material onto a substrate, heating the film, exposing the heated film through a photomask to high energy radiation or electron beam, heating the exposed film and then developing with a developer 

Polymer, resist material and patterning processing

A resist composition comprising a hydrogenated product of ring-opening metathesis polymer and a poly(meth)acrylic acid derivative as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etch resistance, and lends itself to micropatterning with electron beams or deep-UV.

Resist composition and patterning process

A resist composition is provided comprising a fluorochemical surfactant which functions to reduce the contact angle of a coating of the resist composition with water or an aqueous base developer as the amount of the fluorochemical surfactant increases. The resist composition forms a coating having a thickness uniformity, free of defects, and wettable with an aqueous base developer when applied onto a substrate, and has a good storage stability in that particles do not increase during storage in solution form.

Resist composition and patterning method

High molecular weight silicone compounds, resist compositions, and patterning method

A polymer comprising recurring units of formulae (1) and (2) wherein R and R are H or methyl, R and R are C alkyl, R to R are H, or R and R , and R and R form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.

Polymer, resist composition and patterning process

A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.

A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

Onium salts, photoacid generators for resist compositions, resist compositions, and patterning process

Onium salts of substituted phenylmethylbenzene-sulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and peeling, and improved pattern profile after development.

Onium salts, photoacid generators, resist compositions, and patterning process

Resist compositions and patterning process

A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C&mdash;O&mdash;C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group &equiv;C&mdash;COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.

Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group

The invention provides a high molecular weight silicone compound comprising recurring units of formula (1) and having a weight average molecular weight of 1,000-50,000. Some or all of the hydrogen atoms of carboxyl groups or carboxyl and hydroxyl groups in the silicone compound may be replaced by acid labile groups.

High molecular weight silicone compounds resist compositions, and patterning method

A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2):

Resist compositions

Growing community of inventors

Nakakubiki-gun, Japan

Shigehiro Nagura