Kabushiki Kaisha Toshiba

Shigehiro Hosoi

Souichi Imamura

Masanori Ochi

Kazuhiko Inoue

Takashi Kimura

Takayuki Teraguchi

Toru Suga

Takahiro Nakagawa

Yutaka Ueno

Masahiro Hasegawa

Noriyoshi Odaki

According to one embodiment, a power detector includes a reference voltage generator, a square signal generator, a detection circuit, and an output circuit. The reference voltage generator is configured to receive a bias voltage and generate a reference voltage. The square signal generator is configured to receive a voltage having a high frequency input voltage superimposed on the bias voltage and output a signal including the reference voltage, a voltage of a square of the high frequency input voltage, and a high-frequency signal. The detection circuit has a first lowpass filter, a first operational amplifier configured to amplify error between an output voltage of the first lowpass filter and the reference voltage and output the error as a control voltage, and a feedback transistor configured to feed a feedback current according to the control voltage back to an output terminal of the square signal generator.

Power detector and wireless device

A high-gain monolithic antenna with high freedom of design has a signal circuit and a stripline dipole antenna which are provided on a substrate. A dielectric film and a conductor cover covering the dielectric film are provided on the upper surface of the substrate, in addition to a hole extending vertically downward to the underside of the substrate, a conductor wall being provided on the surface thereof. Furthermore, a metallic film is evaporated so as to contact both a metallic cover and a conductor wall. A first grounding conductor and a dielectric are provided on the lower surface of the substrate, and a second grounding conductor is provided on the upper surface of the substrate. A horn, which is tapered into the dielectric and the first grounding conductor thereby forming the shape of a quadrangular pyramid, is provided so as to overlap a hole etched into the substrate. Microwaves or milliwaves are radiated to/from the horn to/from the underside of the substrate.

Monolithic antenna

A semiconductor device has an active layer formed on a semiconductor substrate with different types of junctions, a source region, a drain region, a T-shaped gate electrode in which the cross-sectional area of the upper surface is larger than that of the lower surface, a first dielectric layer covering at least the exposed surface of the active layer, and the gate electrode, and a second dielectric layer enclosing the first dielectric layer. In the device, when the specific inductive capacities of the first and second dielectric layers are .epsilon.(1) and .epsilon.(2) respectively .epsilon.(1)&lt;.epsilon.(2) and the water absorption ratio of the first dielectric layer is greater than the water absorption ratio of the second dielectric layer.

Semiconductor device sealed with molded resin

Growing community of inventors

Kawasaki, Japan

Shigehiro Hosoi