Kabushiki Kaisha Toshiba

Shigehiko Saida

Yoshitaka Tsunashima

Masayuki Tanaka

Yoshio Ozawa

Mitsuhiro Noguchi

Ichiro Mizushima

Yuji Takeuchi

Akihito Yamamoto

Masanobu Saito

Akira Goda

Hiroshi Akahori

Susumu Hiyama

Yuichiro Mitani

Takeo Furuhata

Katsuya Okumura

Tsutomu Sato

Takeshi Hamamoto

Takashi Nakao

Hirofumi Inoue

Kiyotaka Miyano

Yuuichi Mikata

Masaki Kamimura

Shuji Katsui

Hexachlorodisilane (SiCl) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

Semiconductor device and method of manufacturing the same

A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.

Non-volatile memory cell

Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1&#x2013;30 atomic % of chlorine.

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufactuing the same

A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cmor less, and a silicon oxide film formed on the silicon nitride film in an ambient atmosphere containing TEOS and O.

Method of fabricating semiconductor device

A semiconductor integrated circuit is disclosed, which includes a semiconductor substrate, a memory cell formed on the semiconductor substrate and having a first gate insulating layer of a stacked structure which includes a silicon nitride layer to become a charge storage layer, and a transistor formed on the semiconductor substrate and having a second gate insulating layer. Here, source and drain diffused layers of the memory cell are covered with a part of the first gate insulating layer, and metal silicide layers are formed on surfaces of source and drain diffused layers of the transistor.

Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems

Semiconductor device having silicon nitride film and silicon oxide film, and method of fabricating the same

SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.

Semiconductor device and method of manufacturing the same including a dual layer raised source and drain

Hexachlorodisilane (Si Cl ) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio

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Yokkaichi, Japan

Shigehiko Saida