Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Shigehiko Mori

Takeshi Gotanda

Kenji Todori

Naomi Shida

Reiko Yoshimura

Tsukasa Tada

Rumiko Hayase

Yoshihiko Nakano

Ikuo Yoneda

Haruhi Oooka

Hiroyuki Kashiwagi

Fumihiko Aiga

Hideyuki Nakao

Ko Yamada

Yasuyuki Hotta

Masakazu Yamagiwa

Atsuko Iida

Akihiro Matsui

Yoshiaki Fukuzumi

Hideaki Aochi

Hyangmi Jung

Kenji Fujinaga

A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.

Photoelectric conversion device and manufacturing method and apparatus thereof

The present embodiments provide a flexible, lightweight and highly efficient photoelectric conversion device and further provide a manufacturing method thereof. The photoelectric conversion device according to the embodiment comprises a laminate structure of a substrate, an ITO electrode, a photoelectric conversion layer and a counter electrode. When subjected to surface X-ray diffraction analysis, the ITO electrode shows an X-ray diffraction profile characterized in that the peak at a diffraction peak position in the range of 2&#x3b8;=30.6&#xb1;0.5&#xb0; has a half-width of 1.0&#xb0; or less. The ITO electrode in the device can be formed by forming an amorphous-phase ITO film on the substrate and then by subjecting the film to annealing treatment at a temperature of 200&#xb0; or less.

Photoelectric conversion device and method for manufacturing the same

The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.

Method and apparatus for manufacturing semiconductor elements

A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer. The element substrate further has: an impurity detection layer in contact with the second electrode inside the sealing region and causing chemical reaction with an impurity containing at least one of oxygen and water; and a third electrode in contact with the impurity detection layer and extending to the outside of the sealing region.

Photoelectric conversion device

In one embodiment, a polymer includes a recurring unit containing a bivalent group expressed by a formula (1) shown below. A weight-average molecular weight of the polymer is in a range of 3000 or more to 1000000 or less. R1 is a monovalent group selected from hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkanoyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heteroaryl group. X is an atom selected from oxygen, sulfur, and selenium. Y and Z are each independently a bivalent group selected from a carbonyl group, a sulfinyl group, and a sulfonyl group. A case where Y and Z are both the carbonyl groups is excluded.

Polymer and solar cell using the same

A solar cell module according to an embodiment includes: a light transmissive first substrate; a second substrate; at least one cell array disposed between the first substrate and the second substrate, the cell array including a plurality of cells arranged, each of the cells including a first electrode disposed on the first substrate, an organic photoelectric conversion film disposed on the first electrode, and a second electrode disposed on the organic photoelectric conversion film; a plurality of light transmissive partition walls disposed at portions on the first substrate, the portions being located between adjacent ones of the cells and at both end portions of the cell array; and a first resin film disposed between the second substrate and each of the cells between adjacent ones of the partition walls, the cells being connected in series.

Solar cell module

A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.

Pattern forming method

A polymer of an embodiment includes a repeating unit containing at least one bivalent group selected from the following formula (1) and the following formula (2).  In the formulas (1) and (2), R is hydrogen, fluorine, an alkyl group, an aryl group, a heteroaryl group, or the like. X and Y are each an alkanoyl group, an aminocarbonyl group, an alkylsulfonyl group, or the like. Ar is an aryl group or a heteroaryl group.

In one embodiment, a polymer includes a repeating unit represented by a formula (1) shown below. A weight-average molecular weight of the polymer is in a range of 3000 or more to 1000000 or less. R1 indicates a monovalent group selected from hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aromatic group, and a substituted or unsubstituted hetero-aromatic group. R2, R3, and R4 indicate independently a monovalent group selected from hydrogen, halogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aromatic group, and a substituted or unsubstituted hetero-aromatic group. X, Y, and Z indicate independently an atom selected from O, S, and Se.

A polymer of an embodiment includes a recurring unit containing at least one bivalent group selected from among a formula (1), a formula (2), a formula (3), and a formula (4). Z1 indicates carbon having an R1 group, nitrogen, or the like. Z2 indicates oxygen, sulfur, selenium, nitrogen having an R2 group, or the like. The R1 and R2 groups indicate hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, or the like, X indicates oxygen, sulfur, selenium, or the like.

A polymer of an embodiment includes a repeating unit containing a bivalent group represented by the following formula (1). R is hydrogen, halogen, an alkyl group, an alkanoyl group, an aryl group, a heteroaryl group, or the like. X is oxygen, sulfur, selenium, or the like. Y and Z each is a bivalent group selected from a carbonyl group, a sulfinyl group, and a sulfonyl group. However, a case where Y and Z are both the carbonyl groups is excluded.

A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.

Near-field exposure mask, resist pattern forming method, device manufacturing method, near-field exposure method, pattern forming method, near-field optical lithography member, and near-field nanoimprint method

According to one embodiment, a waveguide includes: a substrate and a member. The member covers at least a part of the substrate and has a difference in the refractive index from the substrate not less than 2. A plurality of concave parts are provided on the substrate. The concave parts are arrayed on an upper face of the substrate. At least a part of a side face of each of the concave parts includes an arc. An inner diameter of each of the concave parts is not more than 50 nm. Intervals of the neighboring concave parts are not more than the inner diameter. The member fills the concave part.

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Kawasaki, Japan

Shigehiko Mori