Tohoku University

Mitsubishi Chemical Corporation

The Japan Steel Works, Ltd.

Soko Kagaku Co., Ltd.

Rohm Co., Ltd.

Sumitomo Metal Mining Company, Ltd.

Kabushiki Kaisha Nihon Micronics

Japan Steel Works M&e, Inc.

Shigefusa Chichibu

Mutsuo Ueda

Kazunobu Kojima

Quanxi Bao

Makoto Saito

Akira Hirano

Yosuke Nagasawa

Rinzo Kayano

Yuji Kagamitani

Tohru Ishiguro

Chiaki Yokoyama

Daisuke Tomida

Hirotaka Otake

Tokuyuki Nakayama

Kazuyuki Tsunokuni

Kouhei Kurimoto

Takashi Tonokawa

Toru Ishiguro

Yuji Sasagawa

Akikazu Tanaka

Hikaru Takano

Kouji Hazu

Masaya Morimoto

Yutaka Kosaka

A pressure container for crystal production having excellent corrosion-resistance is provided. This pressure container produces crystals within the container using a seed crystal, a mineralizer, a raw material, and ammonia in a supercritical state or a subcritical state as a solvent. The pressure container has Ag present over the entire surface of at least the inner surface thereof in contact with the solvent. The Ag can be disposed by one or a combination of two or more among, for instance, Ag lining, Ag welding, and Ag plating. The mineralizer is preferably a fluorine mineralizer containing no halogen atoms other than fluorine.

Pressure container for crystal production

A secondary battery includes: a first oxide semiconductor having a first conductivity type; a first charging layer disposed on the first oxide semiconductor layer, and composed by including a first insulating material and a second oxide semiconductor having the first conductivity type; a second charging layer disposed on the first charging layer; a third oxide semiconductor layer having a second conductivity type disposed on the second charging layer; and a hydroxide layer disposed between the first charging layer and the third oxide semiconductor layer, and containing a hydroxide of a metal constituting the third oxide semiconductor layer. The highly reliable secondary battery is capable of improving an energy density and increasing battery characteristics (electricity accumulation capacity).

Secondary battery

To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element. In the n-type AlGaN-based semiconductor layerconstituting the nitride semiconductor light-emitting element, a plurality of thin film-like Ga-rich layers that is a part of the n-type layerhaving a locally high Ga composition ratio exists spaced apart from each other in a vertical direction that is orthogonal to the upper surface of the n-type layer, an extending direction of at least a part of the plurality of Ga-rich layers on a first plane parallel to the vertical direction is inclined with respect to an intersection line between the upper surface of the n-type layer and the first plane, the plurality of Ga-rich layers exists in stripes on the second plane parallel to the upper surface of the n-type layerin an upper layer region having a thickness of 100 nm or less at lower side from the upper surface of the n-type layer, AlN molar fractions of the Ga-rich layersare greater than AlN molar fraction of a well layerin an active layerconstituting the light-emitting element

Nitride semiconductor ultraviolet light-emitting element

A manufacturing method of a nitride semiconductor ultraviolet light-emitting element having a peak emission wavelength of 285 nm or shorter comprises a first step of forming an n-type semiconductor layer composed of an n-type AlGaN-based semiconductor (1&#x2265;X&#x2265;0.5) on an upper surface of an underlying portion including a sapphire substrate, a second step of forming, above the n-type semiconductor layer, an active layer that includes a light-emitting layer composed of an AlGaN-based semiconductor (X&#x3e;Y&#x3e;0) and that is composed of an AlGaN-based semiconductor as a whole, and a third step of forming a p-type semiconductor layer composed of a p-type AlGaN-based semiconductor (1&#x2265;Z&#x3e;Y) above the active layer. In the manufacturing method, a growth temperature at the second step is higher than 1200&#xb0; C. and equal to or higher than a growth temperature at the first step.

Manufacturing method of nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element

A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

Method for producing nitride single crystal using nitrogen-containing solvent, mineralizer having fluorine atom, and raw material

Method for producing nitride single crystal

Provided is a laminate which includes a transparent conductive film layer that is composed of an oxide thin film mainly composed of titanium oxide and contains an additional element such as niobium, and also contains an anatase phase having more excellent crystallinity and further has high refractive index and low resistivity by forming an optimal buffer layer on the substrate. Also provided are: a semiconductor light emitting element which comprises the laminate; and a functional element such as a solar cell, which includes the laminate.

Laminate, method for producing same, and functional element using same

A nitride semiconductor device includes: a semiconductor base layer made of a conductive group III nitride semiconductor having a principal plane defined by a nonpolar plane or a semipolar plane; an insulating layer formed on the principal plane of the semiconductor base layer with an aperture partially exposing the principal plane; a nitride semiconductor multilayer structure portion, formed on a region extending onto the insulating layer from the aperture, having a parallel surface parallel to the principal plane of the semiconductor base layer as well as a +c-axis side first inclined surface and a &#x2212;c-axis side second inclined surface inclined with respect to the principal plane of the semiconductor base layer and including two types of group III nitride semiconductor layers at least having different lattice constants; a gate electrode formed to be opposed to the second inclined surface; a source electrode arranged to be electrically connected with the group III nitride semiconductor layers; and a drain electrode formed on a back surface of the semiconductor base layer opposite to the principal plane.

Nitride semiconductor device with a vertical channel and method for producing the nitride semiconductor device

Growing community of inventors

Miyagi, Japan

Shigefusa Chichibu