Fujitsu Corporation

Photonics Electronics Technology Research Association

Shigeaki Sekiguchi

Shinsuke Tanaka

Tsuyoshi Aoki

Shinji Tadaki

Nobuhiro Imaizumi

Toshiya Akamatsu

Haruhisa Soda

Suguru Akiyama

Kenichi Kawaguchi

Akinori Hayakawa

Lei Zhu

An optical wiring module includes an optical wiring substrate on which an optical waveguide having a light input/output part is formed, and a fiber holder mounted on the optical wiring substrate, the fiber holder being configured to hold an optical fiber. The optical wiring substrate includes a hydrophobic film having an opening at a position corresponding to the light input/output part and a first adhesive layer disposed within the opening, and the optical fiber is optically coupled to the light input/output part via the first adhesive layer.

Optical wiring module, optical transceiver, and optical coupling method

An optical transmitter includes: a ring waveguide; an electrode which is formed near the ring waveguide and is provided with a signal; a first waveguide optically coupled to the ring waveguide; a second waveguide optically coupled to the ring waveguide without optically coupled directly to the first waveguide; and a light source configured to supply continuous wave light to the first waveguide.

Optical transmitter and method for controlling operation state of optical transmitter

An optical device includes: an optical integrated circuit chip that comprises an optical integrated circuit and an optical interface connected thereto; an electronic circuit chip that comprises an electronic circuit connected to the optical integrated circuit; a through wiring board that comprises a through wiring connected to the electronic circuit chip; a first bump that connects the optical integrated circuit and the electronic circuit between the optical integrated circuit chip and the electronic circuit chip; a second bump that connects the electronic circuit and the through wiring between the electronic circuit chip and the through wiring board; and a third bump connected to an end portion on an opposite side to the second bump of the through wiring. The optical integrated circuit chip and the through wiring board are disposed on a side of a first main surface of the electronic circuit chip. A first distance between the first main surface and a second main surface of the optical integrated circuit chip, the second main surface being on an opposite side to the electronic circuit chip, is equal to or smaller than a second distance between the first main surface and a vertex of the third bump, the vertex being on an opposite side to the electronic circuit chip.

Optical device and optical module

An optical switching apparatus includes an optical switch element which includes an input port and an output port, and to which a switch control signal is supplied to modulate and output signal light which enters the input port depending on a level of the switch control signal; and an optical gate element which is connected to the output port of the optical switch element and to which a gate control signal is supplied to switch an output of the signal light depending on a level of the gate control signal, wherein the optical switch element varies intensity of the signal light which is output from the output port depending on the switch control signal controlled based on magnitude of a light intensity signal of the optical gate element.

Optical switching apparatus and method

A semiconductor optical device includes a first clad layer, a second clad layer and an optical waveguide layer sandwiched between the first clad layer and the second clad layer, wherein the optical waveguide layer includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer and extending in one direction, and a third semiconductor layer covering a top surface of the second semiconductor layer, and wherein the first semiconductor layer includes an n-type region disposed on one side of the second semiconductor layer, a p-type region disposed on the other side of the second semiconductor layer, and an i-type region disposed between the n-type region and the p-type region, and wherein the second semiconductor layer has a band gap narrower than band gaps of the first semiconductor layer and the third semiconductor layer.

Semiconductor optical device

A semiconductor optical amplifier includes a semiconductor substrate; an optical waveguide that includes an active layer formed on the semiconductor substrate; and a wavelength selective reflection film that is formed on an end face where signal light is incident on the optical waveguide the wavelength selective reflection film allows transmission of the signal light, and reflects light of any wavelength other than the signal light.

Semiconductor optical amplifier and optical module

An optical signal generator includes a single-mode laser; a reflecting mirror to define another cavity different from a cavity of the single-mode laser, and reflect a part of output light from the single-mode laser to return the part of the output light to the single-mode laser; an intensity modulator provided between the single-mode laser and the reflecting mirror; and a phase adjuster, provided between the single-mode laser and the reflecting mirror, to adjust a frequency difference between a signal on state and a signal off state generated in accordance with intensity modulation by the intensity modulator.

Optical signal generator and method for adjusting the same having a reflecting mirror to define another cavity different from the cavity of a single mode laser

A semiconductor laser includes an optical waveguide formed on a semiconductor substrate and capable of generating gain by current injection, and a diffraction grating having a phase shift and provided along the optical waveguide over the overall length of the optical waveguide on the semiconductor substrate. The semiconductor laser is configured such that a Bragg wavelength in a region in the proximity of each of the opposite ends of the optical waveguide is longer than a Bragg wavelength in a region in the proximity of the phase shift in a state in which current injection is not performed for the optical waveguide.

Semiconductor laser and semiconductor optical integrated device

There are provided first and second optical waveguides formed on a semiconductor substrate and having upper clad layers and core layers that are separated mutually respectively, first and second phase modulation electrodes formed on the first and second optical waveguides respectively, and first and second slot-line electrodes formed on the semiconductor substrate on both sides of the first and second optical waveguides and connected to the first and second phase modulation electrodes via air-bridge wirings separately respectively.

Growing community of inventors

Zama, Japan

Shigeaki Sekiguchi