Renesas Electronics Corporation

Nec Electronics Corporation

The Foundation for the Promotion of Industrial Science

Shien Cho

Kenichi Ito

Takahiro Hara

Katsuyuki Fukutani

Markus Wilde

First, a product to be inspected is prepared. The product to be inspected includes a substrate and a first film formed on the substrate. TDS is performed while the temperature of the product to be inspected is raised to 1,000&#xb0; C. or higher, and the quality of the product to be inspected is determined by checking for the presence or absence of a peak at 1,000&#xb0; C. or higher. Meanwhile, the substrate is, for example, a semiconductor substrate such as a silicon substrate. In addition, the rate of temperature rise is, for example, equal to or higher than 40&#xb0; C./min and equal to or lower than 80&#xb0; C./min. The upper limit of the temperature of TDS is, for example, 1,300&#xb0; C.

Inspection method and method of manufacturing semiconductor device

A semiconductor memory device has a cover film (), between a memory cell (gate electrode, and source and drain regionsand) and an interlayer insulating film (), the cover film covering the memory cell, wherein the cover film () has a hydrogen storage film () that is a coating film on a surface of a silicon nitride film (), and in addition, has a hydrogen storage film () on a bottom surface of the silicon nitride film (). The hydrogen storage films (and) are silicon nitride oxide films that include SiNO. By suppressing diffusion of hydrogen atoms to a memory cell from an interlayer insulating film, reliability of operation of the memory cell is improved.

Semiconductor memory device and manufacturing method therefor

A method of directly measuring hydrogen permeability of a film is provided. The method of evaluating a film includes acquiring, with respect to a specimen including a plurality of films stacked on each other, ion dose-dependence data of intensity of &#x3b3;-beam generated by hydrogen resonant nuclear reaction, and fitting the data with a functional equation of the ion dose.

Method of evaluating a film

A semiconductor memory in which a gate insulating film (tunnel insulating film) in a memory cell provides higher operational reliability. The semiconductor memory includes an insulating filmbetween a silicon substrateand a gate electrode. The insulating filmis composed of a silicon oxide film, a silicon nitride filmand a silicon oxide film, stacked in this order between the silicon substrate and the gate electrode from the side of the silicon substrate. There are provided hydrogen occluding filmsandon an interface between the silicon oxide filmand the silicon nitride film, on an interface between the silicon nitride filmand the silicon oxide filmand on an interface between the silicon oxide filmand the gate electrode(FIGS.A andB).

Semiconductor memory and method for manufacturing the same

A nonvolatile memory semiconductor device and a method for manufacturing thereof are provided to avoid deterioration of the tunnel insulating film to increase frequency of writing data on the nonvolatile memory semiconductor device and erasing thereof. Concentration of atomic nitrogen in a tunnel insulating filmof a nonvolatile memory semiconductor deviceis 0.1 to 5 atomic %. In addition, larger amount of atomic nitrogen in the tunnel insulating filmis distributed primarily in the interface layer of the tunnel insulating film, and concentration of atomic nitrogen in the interface layer is 10 times or more higher than concentration of atomic nitrogen in other portion of the tunnel insulating film. Further, density per unit area of atomic nitrogen in the surface of the tunnel insulating filmcontacting with the floating gate is equal to or lower than 4&#xd7;10atoms/cm.

Growing community of inventors

Kanagawa, Japan

Shien Cho