Taiwan Semiconductor Manufacturing Comp. Ltd.

Shich-Chang Suen

Liang-Guang Chen

Chi-Jen Liu

Li-Chieh Wu

Kei-Wei Chen

He Hui Peng

Yung-Chung Chen

Yung-Cheng Lu

Ying-Liang Chuang

Ming-Liang Yen

Che-Liang Chung

Chin-Hsiang Chan

Chih Hung Chen

Te-Chien Hou

Wei-Chen Hsiao

Chun-Kai Tai

Wen-Pin Liao

Chi-Ming Tsai

Shwang-Ming Jeng

William Weilun Hong

Gin-Chen Huang

Fu-Ming Huang

Han-Hsin Kuo

Ji Cui

Chi-Te Huang

He-Hui Peng

Wne-Pin Peng

Kang Huang

Embodiments of the present disclosure relate a CMP tool and methods for planarization a substrate. Particularly, embodiments of the present disclosure provide a substrate transporter for use in a CMP tool. The transporter may be used transport and/or carry substrates among various polishers and cleaners in a CMP tool while preventing the substrates from drying out during transportation. By keeping surfaces of the substrates wet during substrate waiting time or idle time in the CMP tool, embodiments of the present disclosure prevent many types of defects, such as byproducts, agglomerated abrasives, pad debris, slurry residues, from accumulate on the substrate surface during CMP processing, thus improve yields and device performance.

Apparatus and methods for chemical mechanical polishing

Some implementations described herein relate to dispensing a slurry onto a polishing pad for a chemical-mechanical planarization (CMP) process. These implementations also involve rotating the polishing pad while the slurry is dispensed onto the polishing pad. Rotation of the polishing pad results in a traversal of the slurry radially outward toward a polishing pad outer edge of the polishing pad. The polishing pad includes a plurality of groove segments and a geometric patterns formed by the plurality of the groove segments impede the flow of the slurry to the polishing pad outer edge.

Chemical-mechanical planarization pad and methods of use

A polishing platform of a polishing apparatus includes a platen, a polishing pad, and an electric field element disposed between the platen and the polishing pad. The polishing apparatus further includes a controller configured to apply voltages to the electric field element. A first voltage is applied to the electric field element to attract charged particles of a polishing slurry toward the polishing pad. The attracted particles reduce overall topographic variation of a polishing surface presented to a workpiece for polishing. A second voltage is applied to the electric field element to attract additional charged particles of the polishing slurry toward the polishing pad. The additional attracted particles further reduce overall topographic variation of the polishing surface presented to the workpiece. A third voltage is applied to the electric field element to repel charged particles of the polishing slurry away from the polishing pad for improved cleaning thereof.

Chemical mechanical polishing apparatus and method

The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a HPOsolution.

Method for metal gate surface clean

A method includes forming a first gate structure over a substrate, where the first gate structure is surrounded by a first dielectric layer; and forming a mask structure over the first gate structure and over the first dielectric layer, where forming the mask structure includes selectively forming a first capping layer over an upper surface of the first gate structure; and forming a second dielectric layer around the first capping layer. The method further includes forming a patterned dielectric layer over the mask structure, the patterned dielectric layer exposing a portion of the mask structure; removing the exposed portion of the mask structure and a portion of the first dielectric layer underlying the exposed portion of the mask structure, thereby forming a recess exposing a source/drain region adjacent to the first gate structure; and filling the recess with a conductive material.

Fin Field-Effect Transistor device and method of forming the same

A cleaning composition for cleaning a surface of a substrate comprising silicon germanium after a chemical mechanical polishing process is provided. The cleaning composition includes an oligomeric or polymeric polyamine, at least one wetting agent, a pH adjusting agent, and a solvent.

Post-CMP cleaning composition for germanium-containing substrate

An abrasive slurry composition for chemical mechanical planarization/polishing (CMP) is provided. The abrasive slurry includes colloidal alumina, a dispersant, and a pH buffer. The colloidal alumina has a particle size of between about 5 nm and about 100 nm. The colloidal alumina may be alpha phase material having a first hardness of about 9 Mohs, or gamma phase material having a second hardness of about 8 Mohs. The abrasive slurry may further include polyacrylic acid (PAA), a down-force enhancer, or a polish-rate inhibitor.

Chemical mechanical polishing composition and method

Fin field-effect transistor device and method of forming the same

A chemical mechanical polishing (CMP) system and associated semiconductor fabrication methods are disclosed herein. An exemplary method includes performing a planarization process in a polishing unit of a CMP system to planarize a surface of a material layer using a CMP slurry. The method further includes, after performing the planarization process, performing a buffing process in the polishing unit of the CMP system to buff the surface of the material layer using an ozone gas dissolved in deionized water (O/DIW) solution. The method further includes controlling the performing of the planarization process and the performing of the buffing process, such that the CMP slurry is received by the polishing unit from a first pipeline during the planarization process and the O/DIW solution is received by the polishing unit from a second pipeline during the buffing process.

Systems and methods for chemical mechanical polish and clean

A chemical mechanical polishing (CMP) system includes an O/DIW generator, a polishing unit, and a cleaning unit. The O/DIW generator is configured to generate an O/DIW solution including ozone gas (O) dissolved in deionized water (DIW). The polishing unit includes components for buffing a surface of a semiconductor structure, and a pipeline coupled to the O/DIW generator to receive the O/DIW solution for the buffing. The cleaning unit is coupled to the O/DIW generator and is configured to clean the surface of the semiconductor structure using the O/DIW solution.

A method for polishing a polishing pad includes detecting a presence of a defect formed on a groove of a polishing pad; removing the defect from the groove of the polishing pad; after removing the defect, measuring a remaining depth of the groove; and based on the measured remaining depth of the groove, applying a polishing condition on the groove.

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Hsinchu, Taiwan

Shich-Chang Suen