Epistar Corporation

Shiau-Huei San

Min-Hsun Hsieh

Chih-Chiang Lu

Wei-Chih Peng

Chien-Yuan Wang

Wei-Yo Chen

A semiconductor device comprising: a substrate; a first reflector on the substrate; a second reflector on the first reflector; a semiconductor system directly contacting the first reflector and the second reflector and comprising a first side wall; and an insulating layer covering the first side wall and formed between the substrate and the first reflector.

Optoelectronic semiconductor device

An optoelectronic semiconductor device includes a conductive layer; a plurality of electrical connectors extending into the conductive layer; a semiconductor system, formed on the conductive layer, electrically connected to the plurality of electrical connectors and having a side surface; an insulation material directly covering the side surface; and an electrode arranged at a position not corresponding to the plurality of electrical connectors.

An embodiment of the invention discloses an optoelectronic semiconductor device. The optoelectronic semiconductor comprises a unit having a plurality of electrical connectors with top surfaces; an insulating material surrounding each of the plurality of electrical connectors, wherein each of the top surfaces are exposed through the insulating material; a semiconductor system, having a side surface directly covered by the insulation material, electrically connected to the plurality of electrical connectors and being narrower in width than both of the unit and the insulating material; an electrode formed on the semiconductor system at a position not corresponding to the plurality of electrical connectors; and a layer provided on the semiconductor system at a side opposite to the electrode and configured to laterally exceed outside more than one outermost boundary of the plurality of electrical connectors.

A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer. The second patterned reflective layer is positioned on an area corresponding to the opening. The light-emitting structure and the carrier are respectively on two sides of the reflective structure.

Light-emitting semiconductor apparatus

An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor.

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Hsinchu, Taiwan

Shiau-Huei San