Taiwan Semiconductor Manufacturing Comp. Ltd.

Qualcomm Incorporated

Shiang-Chi Lin

Chia-Hua Chu

Fei-Lung Lai

Chun-Wen Cheng

Jung-Huei Peng

Jessica Liu Strohmann

Hrishikesh Vijaykumar Panchawagh

Kostadin Dimitrov Djordjev

Chin-Jen Tseng

Min-Lun Yang

Chia-Wei Yang

Yipeng Lu

Yi-Chien Wu

Yu-Chia Liu

Jae Hyeong Seo

Ila Ravindra Badge

Shaojui Li

Hsiang-Chi Liu

Wei Siang Tan

Kang-Che Huang

An apparatus may include a display stack, an ultrasonic sensor stack and a high-impedance stack including one or more high-impedance layers. The ultrasonic sensor stack may include an ultrasonic transceiver layer and an ultrasonic transceiver circuitry (UTC) layer. Each of the high-impedance layers may have an acoustic impedance that is higher than an acoustic impedance of the UTC layer. The high-impedance stack and the ultrasonic sensor stack may form an acoustic resonator bounded by the UTC layer and the high-impedance stack. The acoustic resonator may be configured to enhance the ultrasonic waves transmitted by the ultrasonic sensor stack at a peak frequency of the ultrasonic sensor stack. The peak frequency may be a frequency used by the ultrasonic sensor stack for obtaining fingerprint images. An apparatus stack portion that includes the ultrasonic sensor stack may have a thickness corresponding to a multiple of a quarter wavelength at the peak frequency.

Devices including one or more high-impedance layers between a display stack and an ultrasonic fingerprint sensor stack

An apparatus may include an ultrasonic sensor stack, a foldable display stack and a transmission enhancement layer. The foldable display stack may include a display stiffener and display stack layers. The display stack layers may form one or more display stack resonators configured to enhance ultrasonic waves transmitted by the ultrasonic sensor stack in a first ultrasonic frequency range. In some implementations, a transmission enhancement resonator may include the display stiffener and the transmission enhancement layer. In some examples, the transmission enhancement resonator may include at least a portion of the ultrasonic sensor stack. The transmission enhancement resonator may be configured to enhance the ultrasonic waves transmitted by the ultrasonic sensor stack in the first ultrasonic frequency range.

Under-display ultrasonic fingerprint sensors for foldable displays

An apparatus includes an ultrasonic sensor stack, a foldable display stack that includes a display stiffener, and an additional stiffener between the ultrasonic sensor stack and the foldable display stack. The additional stiffener forms an acoustic resonator with the display stiffener and an adhesive layer between the display stiffener and the additional stiffener in order to amplify transmission of ultrasonic waves transmitted by the ultrasonic sensor stack. The additional stiffener includes a material having a high modulus of elasticity, low density, and high acoustic impedance value. In some cases, the additional stiffener includes a metal, a ceramic, a glass, or a glass ceramic. The additional stiffener increases an overall stiffness and mechanical integrity of the apparatus so that a foam backer may be omitted from the ultrasonic sensor stack.

Ultrasonic sensor system and multi-layer stiffener for foldable display

A method for manufacturing a MEMS structure is provided. The method includes providing a MEMS substrate having a first surface, forming a first buffer layer on the first surface of the MEMS substrate, and forming a first roughening layer on the first buffer layer. Also, a MEMS structure is provided. The MEMS structure includes a MEMS substrate, a first buffer layer, a first roughening layer, and a CMOS substrate. The MEMS substrate has a first surface and a pillar is on the first surface. The first buffer layer is on the first surface. The first roughening layer is on the first buffer layer. The CMOS substrate has a second surface and is bonded to the MEMS substrate via the pillar. Moreover, an air gap is between the first roughening layer and the second surface of the CMOS substrate.

MEMS structure and manufacturing method thereof

A semiconductor structure is provided. The semiconductor structure includes a substrate, a plurality of vias, a signal transmitting portion, a heater and a sensing material. The plurality of vias penetrates the substrate, wherein each of the plurality of vias includes a conductive or semiconductive portion surrounded by an oxide layer. The signal transmitting portion is disposed in the substrate, wherein adjacent vias of the plurality of vias surrounds the signal transmitting portion. The heater is electrically connected to the signal transmitting portion, and the sensing material is disposed over the heater and electrically connected to the substrate. A method of manufacturing a semiconductor structure is also provided.

Semiconductor manufacturing method and structure thereof

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.

CMOS-MEMS structure and method of forming the same

A method of manufacturing a semiconductor structure includes receiving a substrate, receiving a heater, receiving an electrode, and receiving a sensing material. The substrate have a first surface, a second surface opposite to the first surface and a plurality of vias extending from the second surface toward the first surface and filled with a conductive or semiconductive material and a first oxide layer, the first oxide layer surrounding the conductive or semiconductive material in the plurality of vias, and a second oxide layer disposed over the first surface and the second surface. The heater is disposed within a membrane over the first surface of the substrate and electrically connected with the substrate. The electrode is over the heater and the membrane; and the sensing material covers a portion of the electrode.

Manufacturing method of semiconductor structure including heater

The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.

A semiconductor structure includes a substrate including a plurality of vias passing through the substrate and filled with a conductive or semiconductive material, and an oxide layer surrounding the conductive or semiconductive material, the substrate defining a cavity therein; a membrane disposed over the substrate and the cavity; a heater disposed within the membrane and electrically connected with the substrate; and a sensing electrode disposed over the membrane and the heater.

Semiconductor structure and manufacturing method thereof

A microelectromechanical systems (MEMS) package with high gettering efficiency is provided. A MEMS device is arranged over a logic chip, within a cavity that is hermetically sealed. A sensing electrode is arranged within the cavity, between the MEMS device and the logic chip. The sensing electrode is electrically coupled to the logic chip and is a conductive getter material configured to remove gas molecules from the cavity. A method for manufacturing the MEMS package is also provided.

Getter electrode to improve vacuum level in a microelectromechanical systems (MEMS) device

Semiconductor sensing structure

A semiconductor structure includes a first device and a second device. The first device includes a first substrate, a plurality of vias passing through the first substrate and filled with a conductive or semiconductive material and a first oxide layer surrounding the conductive or semiconductive material, a cavity surrounded by the first substrate, a metallic material disposed over the first surface, a second oxide layer disposed over the second surface, a membrane disposed over the second oxide layer and the cavity, a heater disposed within the membrane, a sensing electrode disposed over the membrane and the heater, and a sensing material disposed over the cavity and contacting with the sensing electrode. The second device includes a second substrate, and a bonding structure disposed over the second substrate. The metallic material is bonded with the bonding structure to integrate the first device with the second device.

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Taoyuan, Taiwan

Shiang-Chi Lin