Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Shi-Yul Kim

Hong-Sick Park

Jong-Hyun Choung

Sang-Gab Kim

Jang-Soo Kim

Woo-Geun Lee

Jae-Hyoung Youn

Min-Seok Oh

Hong-Kee Chin

Won-Suk Shin

Sang-Soo Kim

Sang-Woo Whangbo

Bong-Kyun Kim

Sun-Young Hong

Young-Wook Lee

Jin-Ho Ju

Hye-Young Ryu

Jean-Ho Song

Hee-Hwan Choe

Chong-Chul Chai

Chang-Oh Jeong

Byeong-Beom Kim

Byeong-Jin Lee

Yang-Ho Bae

Ki-Yeup Lee

Nam-Seok Suh

Dong-Gyu Kim

Hoon Jong Kang

Yu-Gwang Jeong

Hi-Kuk Lee

Jong-In Kim

Hong-Suk Yoo

Soo-Wan Yoon

Jun-Hyung Souk

Won-Kie Chang

Kwang-Ho Lee

Jeong-Min Park

Mee-Hye Jung

Sung-Hoon Yang

Ki-Won Kim

Jong-in Kim

Yang-Ho Jung

Sang-woo Kim

Shin-Il Choi

Jae-Sung Kim

Sung-Ryul Kim

Jung-In Park

Ki-beom Lee

Pil-Sang Yun

Dong-Ju Yang

Hwa-Yeul Oh

Woo-Sung Sohn

Hyun-Cheol Shin

Hong-Sik Park

Soo-Jin Kim

O-Sung Seo

Sam-Young Cho

Je-Hyeong Park

Won-Guk Seo

Hong-Long Ning

Pil-Soon Hong

Jae-Ho Lee

Hyang-Shik Kong

Kyoung-Ju Shin

Seung-Ha Choi

Dong-Yoon Kim

Su-Hyoung Kang

Joo-han Kim

Eun-Guk Lee

Joo-Ae Youn

Woo-Seok Jeon

Yoon-Ho Kang

Jang-Sub Kim

Byung-Duk Yang

Doo-Hee Jung

Kyoung-Tai Han

Dong-ki Lee

A thin film transistor ('TFT') array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

Thin film transistor array panel and manufacturing method of the same

A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.

Thin film transistor substrate and the method thereof

A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.

Thin film transistor array panel and method for manufacturing the same

An organic layer composition and a liquid crystal display including the same are provided. An organic layer composition according to an exemplary embodiment includes a binder formed by copolymerizing compounds included in a first group and a second group, wherein the first group includes an acryl-based compound and the second group includes a compound without a &#x2014;COO&#x2014; group.

Organic layer composition and liquid crystal display using the same

A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

Thin film transistor substrate for display panel

A liquid crystal display to prevent light leakage with an improvement of aperture ratio and a reduction of load of a data line is provided. The liquid crystal display includes a gate line and a storage electrode line formed on a insulating substrate and apart from each other, a first data line and a second data line intersecting the gate line, a first pixel electrode defined by the gate line and the first data line, and a second pixel electrode defined by the gate line and the second data line and neighboring the first pixel electrode. Also, a blocking electrode between the first pixel electrode and the second pixel electrode is included, wherein at least portion of the first data line is disposed under the first pixel electrode, and at least portion of the blocking electrode is disposed under the second pixel electrode and apart from the first data line.

Liquid crystal display

Method for manufacturing thin film transistor and liquid crystal by treating a surface layer

An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH)SO, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

Etchant and method of manufacturing an array substrate using the same

A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.

Thin film transistor array panel having improved storage capacitance and manufacturing method thereof

A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.

Display device, method of manufacturing the same and mask for manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Shi-Yul Kim